Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 Features: * General-purpose low-power NPN silicon transistor. * Housed in TO-18 case. * Also available in chip form using the 0003 chip geometry. * The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 12 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 4.5 V 400 mW 2.3 mW/oC o Power Dissipation, TA = 25 C PT Derate above 25oC Operating Junction Temperature Storage Temperature TJ -65 to +200 TSTG -65 to +200 o C o C Data Sheet No. 2N3960 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IC = 10 A Collector-Emitter Cutoff Current VCE = 10 V, VBE = 0.4 V VCE = 10 V, VEB = 2.0 V o VCE = 10 V, VEB = 2.0 V, TA = 150 C ON Characteristics Forward Current Transfer Ratio IC = 1.0 mA, VCE = 1 V IC = 10 mA, VCE = 1 V, pulsed IC = 30 mA, VCE = 1 V, pulsed IC = 10 mA, VCE = 1.0 V, TC = -55oC Base-Emitter Saturation Voltage VCE 1.0 V, IC = 1.0 mA VCE 1.0 V, IC = 30 mA Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 30 mA, IB = 3.0 mA Small Signal Characteristics Symbol Min Max Unit V(BR)CBO 20 --- V V(BR)CEO 12 --- V V(BR)EBO 4.5 --- V ICEX1 ICEX2 ----- 1.0 5.0 A nA ICEX3 --- 5.0 A Symbol Min Max Unit hFE1 hFE2 hFE3 40 60 30 --300 --- ------- hFE4 30 --- VBE1 VBE2 ----- 0.8 1.0 V dc V dc VCE(sat)1 VCE(sat)2 ----- 0.2 0.3 V dc V dc Symbol Min Max Unit |hFE1| |hFE2| |hFE3| 13 14 12 ------- ------- COBO --- 2.5 pF CIBO --- 2.5 pF Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 4 V, IC = 5.0 mA, f = 100 MHz VCE = 4 V, IC = 10 mA, f = 100 MHz VCE = 4 V, IC = 30 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz