Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)b TA= 25_C ID TA= 70_C Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C Power Dissipationb Operating Junction and Storage Temperature Range V - 2.3 - 1.5 IDM - 10 IS - 1.6 PD TA= 70_C Unit 1.25 0.8 A W TJ, Tstg - 55 to 150 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc 100 RthJA 166 _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990--Rev. E, 13-Oct-03 www.vishay.com 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 250 mA - 20 VGS(th) VDS = VGS, ID = - 250 mA - 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage V "100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10 VDS v - 5 V, VGS = - 4.5 V -6 VDS v - 5 V, VGS = - 2.5 V -3 mA A VGS = - 4.5 V, ID = - 2.8 A 0.105 0.130 VGS = - 2.5 V, ID = - 2.0 A 0.145 0.190 gfs VDS = - 5 V, ID = - 2.8 A 6.5 VSD IS = - 1.6 A, VGS = 0 V - 0.80 - 1.2 5.8 10 VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.8 A 0.85 rDS(on) DS( ) nA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.70 Input Capacitance Ciss 415 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 6 V, VGS = 0, f = 1 MHz nC 223 pF 87 Switchingc Turn On Time Turn-On Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W 13.0 25 36.0 60 42 70 34 60 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 70627 S-31990--Rev. E, 13-Oct-03 Si2301DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 5, 4.5, 4, 3.5, 3 V 2.5 V 6 2V 4 2 0, 0.5, 1 V 1.5 V 0 0 1 2 3 TC = - 55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 4 25_C 6 125_C 4 2 0 0.0 5 VDS - Drain-to-Source Voltage (V) 2.0 2.5 3.0 800 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 1.5 Capacitance 1000 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 600 Ciss 400 Coss Crss 200 0.1 0.0 0 0 2 4 6 8 10 0 Gate Charge 5 1.8 VDS = 6 V ID = 2.8 A 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 4 3 2 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 70627 S-31990--Rev. E, 13-Oct-03 3 6 9 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) 1.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 0.5 8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2301DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C TJ = 25_C 1 0.4 0.3 ID = 2.8 A 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 VSD - Source-to-Drain Voltage (V) 6 8 Single Pulse Power 14 12 0.3 0.2 10 ID = 250 mA Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 0.1 0.0 8 TC = 25_C Single Pulse 6 4 - 0.1 2 0 - 0.2 - 50 0 50 100 150 0.01 0.10 TJ - Temperature (_C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70627 S-31990--Rev. E, 13-Oct-03