1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BUK7619-100B
N-channel TrenchMOS standard level FET
Rev. 01 — 10 October 2007 Product data sheet
nTrenchMOS technology nQ101 compliant
n175 °C rated nStandard level compatible
nAutomotive systems nGeneral purpose power switching
nMotors, lamps and solenoids n12 V, 24 V and 42 V loads.
nEDS(AL)S ≤222 mJ nRDSon =17mΩ(typ)
nID≤64 A nPtot ≤200 W
Table 1. Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT404 (D2PAK)
2 drain (D)
3 source (S)
mb mounting base; connected to drain (D)
mb
13
2S
D
G
mbb076
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 2 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
3. Ordering information
4. Limiting values
[1] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note
AN10273
for further information.
Table 2. Ordering information
Type number Package
Name Description Version
BUK7619-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3-leads (one
lead cropped) SOT404
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VDGR drain-gate voltage (DC) RGS =20kΩ- 100 V
VGS gate-source voltage - ±20 V
IDdrain current Tsp =25°C; VGS = 10 V; see Figure 2 and 3-64A
Tsp = 100 °C; VGS = 10 V; see Figure 2 -45A
IDM peak drain current Tmb =25°C; pulsed; tp≤10 µs; see Figure 3 - 256 A
Ptot total power dissipation Tmb =25°C; see Figure 1 - 200 W
Tstg storage temperature −55 +175 °C
Tjjunction temperature −55 +175 °C
Source-drain diode
IDR reverse drain current Tmb =25°C - 64 A
IDRM peak reverse drain current Tmb =25°C; pulsed; tp≤10 µs - 256 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy unclamped inductive load; ID=64A;
VDS ≤100 V; RGS =50Ω; VGS = 10 V; starting
at Tj=25°C
- 222 mJ
EDS(AL)R repetitive drain-source avalanche
energy [1] -- mJ
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 3 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
VGS ≥10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature Fig 2. Continuous drain current as a function of
mounting base temperature
Tmb =25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Tmb (°C)
0 20015050 100
03na19
40
80
120
Pder
(%)
0
003aab142
0
20
40
60
80
0 50 100 150 200
T
mb
(°C)
I
D
(A)
Pder Ptot
Ptot 25°C()
------------------------100 %×=
003aab143
10
-1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC 100 ms
10 ms
Lim it R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µs
100 µs
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 4 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction
to mounting base - - 0.74 K/W
Rth(j-a) thermal resistance from junction
to ambient mounted on a printed-circuit board;
minimum footprint - 50 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aab144
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
t h (j -m b)
(K/W)
δ = 0.5
0.2
0.1
0.05
single shot
0.02
tpT
P
t
tp
T
δ =
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 5 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID= 250 µA; VGS =0V
Tj=25°C 100 - - V
Tj=−55 °C 89--V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS; see Figure 9 and10
Tj=25°C 234V
Tj= 175 °C 1--V
Tj=−55 °C - - 4.4 V
IDSS drain leakage current VDS = 100 V; VGS =0V
Tj=25°C - 0.02 1 µA
Tj= 175 °C - - 500 µA
IGSS gate leakage current VGS =±20 V; VDS = 0 V - 2 100 nA
RDSon drain-source on-state resistance VGS = 10 V; ID= 25 A; see Figure 7 and 8
Tj=25°C - 17 19 mΩ
Tj= 175 °C --49mΩ
Dynamic characteristics
QG(tot) total gate charge ID= 25 A; VDD =80V; V
GS =10V;
see Figure 14 -53-nC
QGS gate-source charge - 11 - nC
QGD gate-drain charge - 27 - nC
Ciss input capacitance VGS =0V; V
DS = 25 V; f = 1 MHz;
see Figure 12 - 2555 3400 pF
Coss output capacitance - 340 480 pF
Crss reverse transfer capacitance - 84 115 pF
td(on) turn-on delay time VDS =30V; R
L= 1.2 Ω;
VGS =10V;R
G=10Ω-19-ns
trrise time -45-ns
td(off) turn-off delay time - 85 - ns
tffall time -34-ns
Source-drain diode
VSD source-drain voltage IS= 25 A; VGS = 0 V; see Figure 15 - 0.85 1.2 V
trr reverse recovery time IS= 20 A; dIS/dt = −100 A/µs;
VGS =0V;V
R=30V - 116 - ns
Qrrecovered charge - 130 - nC
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 6 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
Tj=25°CT
j=25°C; ID=10A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aac043
0
50
100
150
200
0246810
V
DS
(V)
I
D
(A)
V
GS
(V) = 20V
4.5
10 15
8
7
6
5.5
5
003aac044
10
15
20
25
30
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
003aac045
0
10
20
30
40
50
0 40 80 120 160 200
I
D
(A)
R
DSon
(mΩ)65.5 6.5 8
20
10
V
GS
(V) = 5
03ng41
0
0.7
1.4
2.1
2.8
-60 0 60 120 180
Tj (°C)
a
aRDSon
RDSon 25°C()
------------------------------
=
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 7 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =V
GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Tj=25°C; VDS =25V V
GS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Tj (°C)
−60 180120060
03aa32
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03aa35
VGS (V)
0642
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min typ max
003aac039
0
20
40
60
80
0204060
I
D
(A)
g
fs
(S)
003aac038
0
1000
2000
3000
4000
10
-1
1 10 10
2
V
DS
(V)
C
(pF) C
iss
C
rss
C
oss
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 8 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
VDS = 25 V Tj=25°C; ID=25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 14. Gate-source voltage as a function of gate
charge; typical values
VGS = 0 V See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; Tj=25°C.
(2) Single-pulse; Tj= 125 °C.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
003aac040
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
003aac041
0
2
4
6
8
10
0204060
Q
G
(nC)
V
GS
(V)
V
DS
(V) = 14
V
DS
(V) = 80
003aac042
0
25
50
75
100
0.0 0.5 1.0 1.5
V
SD
(V)
I
S
(A)
T
j
= 25 °C
T
j
= 175 °C
003aab145
1
10
10
2
10
-3
10
-2
10
-1
1 10
t
AL
(ms)
I
AL
(A)
(1)
(2)
(3)
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 9 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
7. Package outline
Fig 17. Package outline SOT404 (D2PAK)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
A1D1
D
max. EeL
pHDQc
2.54 2.60
2.20
15.80
14.80
2.90
2.10
11 1.60
1.20 10.30
9.70
4.50
4.10 1.40
1.27 0.85
0.60 0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0 2.5 5 mm
scale
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404
e e
E
b
D1
HD
D
Q
Lp
c
A1
A
13
2
mounting
base
05-02-11
06-03-16
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 10 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
8. Soldering
9. Revision history
Fig 18. Reflow soldering footprint for SOT404
msd057
solder lands
solder resist
occupied area
solder paste
10.50
7.40
7.50
1.50
1.70
10.60
1.20
1.30
1.55
5.08
10.85
0.30
2.15
8.35
2.25
4.60
0.20
3.00
4.85
7.95
8.15
8.075
8.275
5.40
1.50
Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK7619-100B_1 20071010 Product data sheet - -
BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 10 October 2007 11 of 12
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BUK7619-100B
N-channel TrenchMOS standard level FET
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 October 2007
Document identifier: BUK7619-100B_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Contact information. . . . . . . . . . . . . . . . . . . . . 11
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
