1
MRF10005MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
•Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
•RF Performance Curves given for 28 Vdc and 36 Vdc Operation
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Hermetically Sealed Industry Standard Package
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input Matching for Broadband Operation
•Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 55 Vdc
Collector–Base Voltage VCBO 55 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous (1) IC1.25 mAdc
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°CPD25
143 Watt
mW/°C
Storage Temperature Range Tstg –65 to +200 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 7.0 °C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF10005/D
SEMICONDUCTOR TECHNICAL DATA
5.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E–02, STYLE 1
Motorola, Inc. 1994
REV 6
MRF10005
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 — — Vdc
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 — — Vdc
Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current (VCB = 28 Vdc, IE = 0) ICBO — — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) hFE 20 — 100 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 10 pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) GPB 8.5 10.3 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) η45 55 — %
Load Mismatch
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Output Power
Figure 1. Test Circuit
C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1 µF
C5 — 47 µF/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long
Z1–Z10 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon,
2.0 oz. Copper, εr = 2.55
RF
INPUT RF
OUTPUT
Z10
C1
28 Vdc
+
–
D.U.T.
Z1 Z3
Z2 Z4 Z5 Z6 Z7 Z8
C3 C4 C5 +
L1
C2 Z9
0.050
0.25
0.20
0.050
0.40
0.90 0.37
0.70 0.13
0.080
0.50 0.20 0.660
0.275
0.16 0.25
0.375
0.57
0.40 0.25
0.08
2.365
1.385
1.125
0.650
0.30
0.000
0.00
0.20
0.30
0.40
0.70
1.45
1.91
1.96
2.365
3
MRF10005MOTOROLA RF DEVICE DATA
Po, OUTPUT POWER (WATTS)
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power
Figure 4. Series Equivalent Input/Output Impedances
9
8
7
6
5
4
3
2
1
00.90.80.70.60.50.40.30.20.10 Pin, INPUT POWER (WATTS)
f = 960 MHz
1215 MHz
VCC = 28 Vdc
9
8
7
6
5
4
3
2
1
00.90.80.70.60.50.40.30.20.10 Pin, INPUT POWER (WATTS)
f = 960 MHz
VCC = 36 Vdc
Po, OUTPUT POWER (WATTS)
1215 MHz
f = 960 MHz
1025
ZOL*
Zin
Zo = 25
Ω
1090
1150
1215
f = 960 MHz
1025
1090
1150
1215
f
MHz Zin
OHMS ZOL*
OHMS
960
1025
1090
1150
1215
6.5 + j8.5
10.0 + j7.0
11.2 + j4.9
10.8 + j2.0
7.8 + j0.0
7.4 – j18.9
7.2 – j17.4
7.1 – j16.3
7.15 – j14.3
7.8 – j11.2
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
Pout = 5 W, VCC = 28 V
MRF10005
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 336E–02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
G
D
H
K
SEATING
PLANE
Q2 PL
–B–
M
A
M
0.25 (0.010) B M
T
–A–
–T–
1
2
3
N
U
FE
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.790 0.810 20.07 20.57
B0.253 0.267 6.43 6.78
C0.144 0.160 3.66 4.06
D0.093 0.107 2.37 2.71
E0.074 0.080 1.88 2.03
F0.002 0.006 0.06 0.15
G0.560 BSC 14.22 BSC
H0.043 0.057 1.10 1.44
K0.346 0.394 8.79 10.10
N0.243 0.257 6.18 6.52
Q0.125 0.135 3.18 3.42
U0.117 0.128 2.98 3.25
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and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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MRF10005/D
*MRF10005/D*
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