VS-UFB280FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES * Two fully independent diodes * Fully insulated package * Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 C) * Low forward voltage drop * Optimized for power conversion: welding and industrial SMPS applications * Easy to use and parallel SOT-227 * Industry standard outline * UL approved file E78996 * Designed and qualified for industrial level PRIMARY CHARACTERISTICS VR 400 V IF(AV) per module at TC = 90 C 280 A * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 trr 40 ns Type Modules - diode FRED Pt(R) Package SOT-227 DESCRIPTION / APPLICATIONS The VS-UFB280FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 400 V Continuous forward current per diode IF (1) TC = 90 C 170 Single pulse forward current per diode IFSM TC = 25 C 1300 PD TC = 90 C 395 Any terminal to case, t = 1 min 2500 V -55 to +175 C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg A W Note (1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals. Revision: 18-Sep-2018 Document Number: 93458 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 A MIN. TYP. MAX. UNITS 400 - - IF = 100 A - 1.06 1.24 IF = 100 A, TJ = 175 C - 0.85 0.95 VR = VR rated - 1.3 50 A TJ = 175 C, VR = VR rated - 0.36 4 mA VR = 400 V - 100 - pF UNITS V DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V - 40 - TJ = 25 C - 93 - TJ = 125 C - 172 - TJ = 25 C IF = 150 A dIF/dt = 200 A/s VR = 200 V - 10.5 - - 20.2 - TJ = 25 C - 490 - TJ = 125 C - 1740 - MIN. TYP. MAX. TJ = 125 C ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS - - 0.43 - - 0.215 - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) RthJC RthCS Flat, greased surface Weight Mounting torque Case style UNITS C/W SOT-227 Revision: 18-Sep-2018 Document Number: 93458 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 Vishay Semiconductors 1000 1000 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 C TJ = 25 C 10 1 TJ = 175 C 100 10 1 TJ = 25 C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 0 2.5 200 100 300 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 C 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 t1 DC t2 Single pulse (thermal resistance) 0.01 0.0001 0.001 Notes: 1. Duty factor D = t1/t.2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 18-Sep-2018 Document Number: 93458 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 www.vishay.com Vishay Semiconductors 250 VR = 200 V TJ = 125 C TJ = 25 C 150 125 DC 100 75 Square wave (D = 0.5) 80 % rated VR applied 50 25 150 100 See note (1) 0 0 40 80 120 160 200 240 50 100 280 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 350 5000 4500 300 4000 250 VR = 200 V TJ = 125 C TJ = 25 C 3500 RMS limit 200 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 100 DC 50 Qrr (nC) Forward Power Loss (W) IF = 150 A IF = 75 A 200 trr (ns) Allowable Case Temperature (C) 175 3000 IF = 150 A IF = 75 A 2500 2000 1500 1000 500 0 0 50 100 150 200 250 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 18-Sep-2018 Document Number: 93458 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 18-Sep-2018 Document Number: 93458 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 280 F A 40 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (280 = 280 A) 5 - Circuit configuration (two separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (40 = 400 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment Two separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 18-Sep-2018 Document Number: 93458 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) O 4.10 (0.161) O 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note * Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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