VS-UFB280FA40
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Revision: 18-Sep-2018 1Document Number: 93458
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Insulated Ultrafast Rectifier Module, 280 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB280FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
Note
(1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
PRIMARY CHARACTERISTICS
VR400 V
IF(AV) per module at TC = 90 °C 280 A
trr 40 ns
Type Modules - diode FRED Pt®
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage VR400 V
Continuous forward current per diode IF (1) TC = 90 °C 170 A
Single pulse forward current per diode IFSM TC = 25 °C 1300
Maximum power dissipation per module PDTC = 90 °C 395 W
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
Operating junction and storage temperatures TJ, TStg -55 to +175 °C
VS-UFB280FA40
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Revision: 18-Sep-2018 2Document Number: 93458
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage VBR IR = 100 μA 400 - -
V
Forward voltage VFM
IF = 100 A - 1.06 1.24
IF = 100 A, TJ = 175 °C - 0.85 0.95
Reverse leakage current IRM
VR = VR rated - 1.3 50 μA
TJ = 175 °C, VR = VR rated - 0.36 4 mA
Junction capacitance CTVR = 400 V - 100 - pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 -
nsTJ = 25 °C
IF = 150 A
dIF/dt = 200 A/μs
VR = 200 V
-93 -
TJ = 125 °C - 172 -
Peak recovery current IRRM
TJ = 25 °C - 10.5 - A
TJ = 125 °C - 20.2 -
Reverse recovery charge Qrr
TJ = 25 °C - 490 - nC
TJ = 125 °C - 1740 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting RthJC --0.43
°C/WJunction to case, both leg conducting - - 0.215
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
VS-UFB280FA40
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 3Document Number: 93458
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
TJ = 175 °C
TJ = 25 °C
0
VF - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
1000
0.5 1.0 1.5 2.0 2.5
0.01
0.1
1
10
100
0 200 300
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
400100
0.001
1000
TJ = 175 °C
TJ = 25 °C
1000
10 100 1000
10
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
TJ = 25 °C
10 000
100
0.01
0.1
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
DC
10
VS-UFB280FA40
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Revision: 18-Sep-2018 4Document Number: 93458
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
175
100 DC
75
40 120 280
25
50
80 160
125
150
200 240
0
Square wave (D = 0.5)
80 % rated VR applied
See note (1)
Forward Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
50
100
150
200
250
300
350
0 50 100 150 200 250
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
100
200
VR = 200 V
TJ = 125 °C
TJ = 25 °C
150
250
50
IF = 150 A
IF = 75 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
1000
5000
3500
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2500
4000
0
500
1500
3000
2000
4500
IF = 150 A
IF = 75 A
VS-UFB280FA40
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 5Document Number: 93458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-UFB280FA40
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 6Document Number: 93458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two separate diodes,
parallel pin-out F
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1- Vishay Semiconductors product
2- Ultrafast rectifier
3- Ultrafast Pt diffused
4- Current rating (280 = 280 A)
5- Circuit configuration (two separate diodes, parallel pin-out)
6- Package indicator (SOT-227 standard insulated base)
- Voltage rating (40 = 400 V)
7
Device code
51 32 4 6 7
VS- UF B 280 F A 40
1
43
2
Lead Assignment
1
4
2
3
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010) CA B
4 x M4 nuts
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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