ee FAIRCHILD ee SEMICONDUCTOR MPS5179 Be SOT-23 B Mark: 3C NPN REF Transistor MMBT5179 Discrete POWER & Signal Technologies PN5179 This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 WA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VcEo Collector-Emitter Voltage 12 Vv Voso Collector-Base Voltage 20 Vv Veo Emitter-Base Voltage 2.5 Vv Io Collector Current - Continuous 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units PN/MPS5179 *MMBT5179 Pp Total Device Dissipation 350 225 mw Derate above 25C 2.8 1.8 mw/c Reva Thermal Resistance, Junction to Ambient 357 556 C/W Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 5179, Rev B 1997 Fairchild Semiconductor Corporation 6ZLSNd / 6ZISLEIW / 6ZLSSdINElectrical Characteristics TA = 25C unless otherwise noted NPN RF Transistor (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Voeorsus) Collector-Emitter Sustaining Voltage | I, =3.0 mA, I; =0 12 Vv Vipryco Collector-Base Breakdown Voltage lo = 1.0 pA, Ie = 0 20 Vv Visryeso Emitter-Base Breakdown Voltage le=10A, Io =O 2.5 Vv leso Collector Cutoff Current Vop = 15 V, le =O 0.02 uA Vogp = 15 V, Ta = 150C 1.0 uA ON CHARACTERISTICS Hee DC Current Gain Ilo = 3.0 MA, Vog = 1.0 V 25 250 VeeEsat) Collector-Emitter Saturation Voltage Ilo = 10 mA, Ip = 1.0 mA 0.4 Vv Veesat) Base-Emitter Saturation Voltage Ilo = 10 mA, Ip = 1.0 mA 1.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product lo = 5.0 mA, Vce = 6.0 V, 900 2000 MHz f = 100 MHz Cob Collector-Base Capacitance Vop = 10 V, le =0, 1.0 pF f =0.1 to 1.0 MHz Hie Small-Signal Current Gain lo = 2.0 MA, Vce = 6.0 V, 25 300 f = 1.0 kHz rbCy Collector Base Time Constant Io = 2.0 mA, Veg = 6.0 V, 3.0 14 ps f = 31.9 MHz NF Noise Figure lo = 1.5 mA, Vee = 6.0 V, 5.0 dB Rg = 500, f = 200 MHz FUNCTIONAL TEST Gpoe Amplifier Power Gain Voce = 6.0 V, Io = 5.0 mA, 15 dB f = 200 MHz Po Power Output Vop = 10 V, le = 12 mA, 20 mw f > 500 MHz * Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Spice Model NPN (|s=69.28E-18 Xtix3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 |se=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176 No=2 Isc=O Ikr=0 Re=4 Cjc=1.042p Mic=.2468 Vjc=.75 Fo=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n Tf=135.6p ltf=.27 Vtf=10 Xtf=30 Rb=10) 6ZLSNd / 6ZISLEIW / 6ZLSSdINNPN RF Transistor (continued) DC Typical Characteristics DC Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current Mm a oO 0.2 125 C B =10 Nm oO oO 0.15 0.1 - DC CURRENT GAIN o a 0.05 E oa oO Voe= 5V 0.1 1 10 I, - COLLECTOR CURRENT (mA) 0 0.001 0.01 0.1 I - COLLECTOR CURRENT (A) Veesar> COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current = Ne} + Veesar* BASE-EMITTER VOLTAGE (V) oO wo Veejonr BASE-EMITTER ON VOLTAGE (V) 0.6 Voge = 0.4 0.1 1 10 20 30 0.01 0.1 1 10 |. - COLLECTOR CURRENT (mA) |, - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature Qo oO V__=20V cB o 9 lepo COLLECTOR CURRENT (nA) 25 50 75 100 125 150 T, - AMBIENT TEMPERATURE (C) 20 30 5V 50 6ZLSNd / 6ZISLEIW / 6ZLSSdINNPN RF Transistor (continued) AC Typical Characteristics POWER DISSIPATION vs AMBIENT TEMPERATURE > + N mo wo Qo on on oO Oo Oo Oo Oo Pp - POWER DISSIPATION (mW) a 3 o 0 25 50 75 100 125 150 TEMPERATURE (C) Test Circuit 50 pF (NOTE 2) | O 500 mHz Output I into 502 (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC FIGURE 1: 500 MHz Oscillator Circuit 6ZLSNd / 6ZISLEIW / 6ZLSSdIN