MASTER DAN401/DAN601/DAN801/DAN803/DAN403 444 4 K /Diodes DAP401/DAP601/DAP801/DAP803 DAN401/DAN601/DAN801/DAN803/DAN403 | DAP401/DAP601/DAP801/DAP&03 LEREV PWAPL-FHBYVAYLALA-FPUT Epitaxial Planar Silicon Diode Arrays REE A vy F > 7AA/Ultra-High-Speed Switching oR @ Stk Dimensions (Unit : mm) 1) RET 2 DAN401/DAP401 DAN6GO1/DAP601 2) SRRMTHS~ : svpans 3) Bik ( t e=1.5ns Typ.) T HS. fF -tR.os0.2 [ 4) AU TNBDILEYH TES. @ Features . i ll i i Ht 1 | Ee 1) High reliability. re th tt 2) High integration , oo 3) High speed (t,: 1.5ns, Typ.). 4) Labor saving feasible in assembly. 4 aan ROHM : SIP Spin ROHM : SIP 7pin DANS01/DAP801/DANS03/DAP803 22.049? 2.00! oA BEREAZTY FLT @ Applications Ultra-high-speed switching. ROHM : SIP pin DAN403 MHS / Equivalent Circuits [tttt [tttt trtlttt HITE TE (1) (2) (3) ta) (5) 1) 2) 3) 5) (2) (8) (8) (7) D5) tw) 2) 3) ta DAN4O1 DAP401 DANGO! DANSO1 DANSOS (1) (2)(3) (4) (5) (6) (7) (8) 19) vaAaaoo@e 7 nage eeom @ @ ma aw i) @) (9) (N.C) DAN403 DAP6O1 DAPSOt DAP&03DAN401/DAN601/DAN801/DAN803/DAN403. 4 4K /Diodes DAP401/DAP601/DAP801/DAP803 3B XH Absolute Maximum Ratings (Ta=25C) 2m | me me) em | Re | o- we | ges | game Type wae | RE | MR | | Rt" ie *? a ec Vam (V) | Va () | lem (mA) lo (mA) | Isurge (A) | Pdimw) |) = 1] (C) Tstg (C) DAN401 80 80 80 25 250 80 150 55~150 DAP401 80 80 80 25 250 80 150 55~150 DAN601 80 80 80 25 250 80 150 55~150 DAP601 80 80 80 25 250 80 150 ~55~150 DAN801 80 80 80 25 250 80 150 55~150 DAP801 80 80 80 25 250 80 150 55~150 DAN803 80 80 80 25 250 80 150 55~150 DAP803 80 80 80 25 250 80 150 55~150 DAN403 80 80 300 100 500 200 150 55~150 *1 Time=tyus #20 Ny LVSKH OM (TOTAL) @ Mh Electrical Characteristice (Ta=25C) Bae me OR a+mhS 2 eM & Type Ve (V) Cond. ta (uA) Cond. Cr (pF) Cond. te (ns) Cond. Max. Ie (mA) Max. Vr (V) Max. Vr (V) f (MHz) Max. Vr (V) Ie (mA) | AIEEE DAN401 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAP401 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAN601 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAP601 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAN801 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAP801 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAN803 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAP803 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig. 8 DAN403 1.2 100 0.1 70 3.5 6 1. 4 6 5 Fig. 8 @ MMs Electrical Characteristic Curves (Ta=25) 125 50 8 Z 0.5 st a FORWARD CURRENT: Ir (mA) Ny \ N nN a 0.2 POWER DISSIPATION ; Pa/Pamax. (%) ' 0.1 0 0 0.2 0.4 086 O8 %1.0 1.2 25 80 s 100 125 180 FORWARD VOLTAGE: Vr (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 QHHRAR Fig.2 Wt MARE t4tt (P TYPE) QV WG A NARS im ATHY AbA