RT9519B
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DS9519B-01 April 2011 www.richtek.com
Ordering Information
Note :
Richtek products are :
` RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
` Suitable for use in SnPb or Pb-free soldering processes.
Applications
zDigital Ca meras
zPDAs a nd Smart Phones
zPortable Instruments
Pin Configurations
General Description
The RT9519B is an integrated single cell Li-ion battery
charger with Auto Power Path Man agement (APPM). No
external MOSFETs are required. The RT9519B enters
sleep mode when power is removed. Charging ta sks are
optimized by using a control algorithm to vary the charge
rate, including pre-charge mode, fast charge mode a nd
constant voltage mode. For the RT9519B, the charge
current can also be progra mmed with an external resistor
a nd modif ied with a n extern al GPIO. The scope that the
battery regulation voltage can be modified with an external
GPIO depends on the battery temperature. The internal
thermal feedback circuitry regulates the die temperature
to optimize the charge rate for all a mbient temperatures.
The charging task will always be terminated in con stant
voltage mode when the charging current reduces to the
termination current of 10% x ICHG_FAST. Other features
include under voltage protection and over voltage protection
for VIN the supply .
Linear Single Cell Li-lon Battery Charger with Auto Power
Path Management
Features
zz
zz
z 28V Maximum Rating for VIN Power
zz
zz
z Selectable Power Current Limit (0.1A / 0.5A / 1.5A)
zz
zz
z Integrated Power MOSFETs
zz
zz
z Auto Power Path Management (APPM)
zz
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z Battery Charging Current Control
zz
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z Battery Regulation Voltage Control
zz
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z Programmable Charging Current and Safe Charge
Timer
zz
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z Under Voltage Prote ction, Over Voltage Prote ction
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z Power Good and Charge Status Indicator
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z Optimized Charge Rate via Thermal Feedback
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z Thin 20-Lead WQFN Package
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zRoHS Compliant and Halogen Free
WQFN-20L 3x3
(TOP VIEW)
Marking Information
GND
VIN VSET
VP
ISETU
TS
TIMER
BAT
USUS
SYS
SYS
SYS
TS_FAULT
ISETA ISET
BAT
PGOOD
CHG
EN
14
15
13
12
17181920
1
2
3
4
9876
GND
21 115
16
10
ISETL
46=YM
DNN
46= : Product Code
YMDNN : Date Code
RT9519B Package Type
QW : WQFN-20L 3x3 (W-Type)
Lead Plating System
G : Green (H al og en Free an d Pb Fr ee)
RT9519B
2DS9519B-01 April 2011www.richtek.com
Function Block Diagram
Typical Application Circuit
CC/CV/TR
/APPM
Multi Loop
Controller
Logic Control
Sleep
Mode
Current
Setting
VIN
ISETA
BAT
Control
Circuit
SYS
200k
200k
200k
ISET
VSET
EN
Thermal
Circuit
VP
200k
200k
USUS
200k
ISETU
ISETL
GND
CHG
PGOOD
Timer
Temperature
Sense
TIMER
TS
1sec
Delay
OVP
UVLO
R
TS_FAULT
VIN
GND
RT9519B
SYS
5
4, 21 (Exposed Pad)
12
1
17, 18, 19
VP
ISETA
CIN
Adapter
10
USUS
20 RISETA
2.2µF
EN
Chip Enable
VSET
15
14
2
3
TIMER 7CTIMER
1µF NTC
6
TS
To System Load
Suspend
Normal
Suspend Mode
PGOOD
CHG
Power Good Indicator
Charge Indicator 8, 9
BAT +
1µF 1-Cell
Li+
4.2V
4.05V
ISETL
13 ISETU
VIN Current Limit
500mA
100mA
11
ISET ICHG
ICHG/2
2.95V to 3.6V
External Power Source
16
VIN Current Limit
TS_FAULT Indicator TS_FAULT
See ISETU
1.5A
CVP R1
CBAT
R2R3R4
CSYS
RT9519B
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DS9519B-01 April 2011 www.richtek.com
Functional Pin Description
Pin No. Pin Name Pin Function
1 VIN Supply Voltage Input.
2 PGOOD Power Good Status Output. Open-drain output.
3 CHG Charger Status Output. Open-drain output.
4,
21 (Exposed Pad) GND Ground. The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
5 ISETA Charge Current Set Input. Connect a resistor (RISETA) between ISETA and GND.
6 TS
Temperature Sense Input. The TS pin connects to a battery’s thermistor to
determine if the battery is too hot or too cold to charge. If the battery’s
tempe ra ture is out of range, c har ging i s pa us ed unt il i t r e-enters the v al id range.
TS also detects whether the battery (wi th NTC) is pres ent or not.
7 TIMER Safe Charge Timer Setting.
8,9 BAT Battery Charge Current Output.
10 EN Charge Enable. Active Low input. 200kΩ pull low.
11 ISET
Half Charge Current Set Input. Control by external GPIO, L = ICHG1 / 2, H = ICHG1,
200kΩ pull low.
12 VP This pin must be provided a regulated voltage from 2.95V to 3.6V by external
power.
13 ISETU
VIN Current Limit Control Input. When ISETL = L, L = 100mA, H = 500mA,
200kΩ p ull low.
14 ISETL VIN Current Limit Control Input. L : see ISETU, H = 1.5A, 200kΩ pull low.
15 VSET
Battery Regulation Set Input. Control by external GPIO. L = 4.05V, H = 4.2V,
200kΩ pull low.
16 TS_FAULT TS Fault Status Output. Open-drain Output. If TS is of fault (too cold, too hot) or
VP triggers UVLO, TS_F AULT = L. If TS and VP are normal, TS_FAULT = H.
17, 18, 19 S YS S ys tem Conn ec t Pin. Conne ct this pin to S ys tem wit h a m inimu m 10μF ce r ami c
capacitor to GND.
20 USUS VIN Suspend Control Input. H = Sus pend, L = No suspend. 200kΩ pull low.
RT9519B
4DS9519B-01 April 2011www.richtek.com
Absolute Maximum Ratings (Note 1)
zSupply Voltage, VIN ----------------------------------------------------------------------------------------------------- −0.3V to 28V
zCHG, PGOOD ------------------------------------------------------------------------------------------------------------ −0.3V to 28V
zOther Pins----------------------------------------------------------------------------------------------------------------- −0.3V to 6V
zCHG, PGOOD Continuous Current ---------------------------------------------------------------------------------- 20mA
zBA T Continuous Current (total in two pins) (Note 2) ----------------------------------------------------------- 2.5A
zPower Dissipation, PD @ TA = 25°C
WQFN-20L 3x3----------------------------------------------------------------------------------------------------------- 1.471W
zPa ckage Thermal Resista nce (Note 3)
WQF N-20L 3x3, θJA ----------------------------------------------------------------------------------------------------- 68°C/W
WQFN-20L 3x3, θJC ------------------------------------------------------------------------------------------------------------------------------------------------ 7.5°C/W
zLead T emperature (Soldering, 10 sec.) ----------------------------------------------------------------------------- 260°C
zJunction T emperature --------------------------------------------------------------------------------------------------- 150°C
zStorage T emperature Range ------------------------------------------------------------------------------------------- −65°C to 150°C
zESD Susceptibility (Note 4)
HBM (Human Body Mode) --------------------------------------------------------------------------------------------- 2kV
MM (Ma chine Mode) ---------------------------------------------------------------------------------------------------- 200V
Recommended Operating Conditions (Note 5)
zSupply Input V oltage Range,VIN (ISETL = H) ---------------------------------------------------------------------- 4.4V to 6V
zSupply Input V oltage Ra nge,VIN (ISETL = L) ---------------------------------------------------------------------- 4.5V to 6V
zJunction T emperature Range ------------------------------------------------------------------------------------------ −40°C to 125°C
zAmbient T emperature Range ------------------------------------------------------------------------------------------ −40°C to 85°C
Electrical Characteristics
(VIN = 5V, VBAT = 4V, TA = 25 °C, unless otherwise specified)
To be continued
Parameter Symbol Test Conditions Min Typ Max Unit
Supp ly I npu t
V IN U nder Volt age Lockout
Threshold VUVLO V
IN = 0V to 4V 3. 1 3.3 3. 5 V
V IN U nder Volt age Lockout
Hysteresis ΔVUVLO V
IN = 4V to 0V - - 240 -- mV
ISYS = I BAT = 0 m A, EN = L ( VBAT > V REGx) -- 1 2
VIN Sup p l y Cu r ren t ISUPPLY ISYS = IBAT = 0mA , EN = H (VBAT > VREGx) -- 0.8 1.5
mA
VI N Suspend Current IUSUS V
IN = 5V , USUS = H -- 195 300 μA
VBAT Sl eep Leakage
Current ISLEEP V
BAT > VIN , (VIN = 0V ) -- 5 1 5 μA
VIN-BAT VOS R i s in g VOS_H -- 200 300 mV
VIN-BAT VOS F a llin g VOS_L 10 50 -- mV
Voltage Regulatio n
System Re gul ation Vo lt age V SYS I
SYS = 800mA 4. 3 4.4 4. 5 V
B atter y Regula tion Vol tag e V REG1 0 to 8 5 °C , Loadi ng = 20mA,
Wh en V SET = H 4.16 4.2 4.23 V
B atter y Regula tion Vol tag e V REG2 0 to 8 5 °C , Lo ading = 20m A,
Wh en V SET = L 4.01 4.05 4.08 V
A PPM Re gul ation Voltage ΔVAPPM V
SYS − ΔVAPPM 120 200 280 mV
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DS9519B-01 April 2011 www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
DPM Regu lat ion Vol tag e VDPM ISETL = L 4.3 4. 4 4.5 V
VIN to VSYS MOSFET Ron RDS(ON) I
VIN = 1000mA -- 0.2 0.35 Ω
BAT to VSYS MOSFET Ro n RDS(ON) V
BAT = 4.2V, ISYS = 1A -- 0.05 0.1 Ω
R e-Charge Threshold ΔVREGCHG Batt ery Regu lat ion − Recharge
level 60 100 140 mV
Current Regulation
ISET A Set Vo lta ge (Fas t Cha rge
Phase) VISETA V
BAT = 4V, R ISETA = 1kΩ -- 2 -- V
C ha r ge Cu r rent S ettin g R ange ICHG 100 -- 1200 mA
C ha r ge Cu r rent A cc ur a cy 1 ICHG1 VBAT = 4V, R ISETA = 1kΩ
ISET = H 570 600 630 mA
C ha r ge Cu r rent A cc ur a cy 2 ICHG2 VBAT = 3.8V, RISETA = 1kΩ
ISET = L 285 300 315 mA
ISETL = H (1.5A Mode) 1.2 1.5 1.8 A
ISETL = L, ISETU = H
(500mA mode) 450 475 500 mA
VIN Current Limit IVIN ISETL = L, ISETU = L
(100mA Mode) 90 95 100 mA
Pre-charge
BAT Pre-Charge Thr eshol d VPRECH BAT Falling 2.7 2.8 2.9 V
BA T Pre-Charge Threshold Hysteresis ΔVPRECH -- 200 -- mV
Pre-Charge Current ICHG_PRE V
BAT = 2V 5 10 15 %
Charge Termination Detection
Termination Current Ratio to Fast
C harge (Exc ept USB 100 Mode ) ITERM ISETL = L , ISET U = H
ISETL = H, ISETU = X 5 10 15 %
Termination Current Ratio to Fast
Charge (USB100 Mode) ITERM2 ISETL = L, ISETU = L -- 3.3 -- %
Login Input/Output
CHG Pull Down Vol tage VCHG I
CHG = 5mA -- 200 -- mV
PGOOD Pul l Down V olt age VPGOOD I
PGOOD = 5mA -- 200 -- mV
TS_FAULT Pull Do wn Voltag e VTS_FAULT I
TS_FAULT = 5mA -- 200 -- mV
Logic-High VIH 1.5 -- --
EN, ISETL, USUS,
ISETU, VSET, ISET
Thr eshold V olta ge Logic-Low VIL -- -- 0.4
V
Protection
Ther m al Re gula ti on T REG -- 125 -- °C
Ther m al Sh ut d ow n Temperatur e TSD -- 155 -- °C
Ther m al Sh ut d ow n H yster e sis ΔTSD -- 20 -- °C
Over Voltage Protection VOVP V
IN Rising 6.25 6.5 6.75 V
Over Voltage Protection Hysteresis ΔVOVP V
IN = 7V to 5V, VOVP − ΔVOVP -- 100 -- mV
Output Short Circuit Detection
Threshold VSHORT V
BAT − VSYS -- 300 -- mV
To be continued
RT9519B
6DS9519B-01 April 2011www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
Time
Pre-Charge Fault Time tPCHG C
TIMER = 1μF (1/8 x tFCHG) 1440 1800 2160 s
Fa st charge Fault Time tFCHG C
TIMER = 1μF 11520 14400 17280 s
PGOOD D eglit ch Time t PGOOD Time measured from VIN :
0Æ5V
1μs rise-time to PGOOD = L -- 1 -- s
Input Over Voltage Blanki ng
Tim e tOVP -- 50 -- μs
Pre-Charge to Fast-Charge
Deglitch Time tPF -- 25 -- ms
Fast-Charge to P re-Charge
Deglitch Time tFP -- 25 -- ms
Ter mination Deglitch Time tTERMI -- 25 -- ms
Recharge Deglitch T ime tRECHG -- 100 -- ms
Input Power Loss to SYS LDO
T urn-Of f D e lay T ime tNO_IN -- 25 -- ms
Pa ck Tem p er at u re Fa ul t
Dete ction De glitch Time tTS -- 25 -- ms
Short Circuit Deglitch Time tSHORT -- 250 -- μs
Short Ci rcuit Re covery Time tSHORT-R -- 64 -- ms
Other
VP (External used only) VVP 2.95 -- 3.6 V
VP Under Voltage Lockout
Threshold Falling Threshold -- 0.8 -- V
TS Battery Detec t Threshold VTS 2.75 2.85 2.95 V
NTC
Low Temperature Trip Poi nt VCOLD Rising Threshold 73 74 75 % of VP
Low Temperature Trip point
Hysteresi s ΔVCOLD -- 1 -- % of VP
High Temperature Trip Point VHOT Falling Threshold 27 28 29 % of VP
High Temperature Trip Point
Hysteresi s ΔVHOT -- 1 -- % of VP
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. Guraranteed by design.
Note 3. θJA is measured in natural convection at TA = 25°C on a high effective thermal conductivity four-layer test board of
JEDEC 51-7 thermal measurement standard. The measurement case position of θJC is on the exposed pad of the
package.
Note 4. Devices are ESD sensitive. Handling precaution is recommended.
Note 5. The device is not guaranteed to function outside its operating conditions.
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Typical Operating Characteristics
Charger On/Off Control from VIN
Time (500ms/Div)
VIN = 5V, VBAT = Real Battery, VVP = 3.3V
VIN
(5V/Div)
IBAT
(500mA/Div)
VBAT
(5V/Div)
USB 500mA Mode
VCHG
(5V/Div)
TS Inserted/Removed
Time (25ms/Div)
VIN = 5V, VBAT = Real Battery, VVP = 3.3V
VBAT
(5V/Div)
IBAT
(500mA/Div)
VTS
(5V/Div)
USB 500mA Mode
VCHG
(5V/Div)
Charger On/Off Control from EN
Time (25ms/Div)
VIN = 5V, VBAT = Real Battery, VVP = 3.3V
VEN
(5V/Div)
IBAT
(500mA/Div)
VBAT
(5V/Div)
USB 500mA Mode
VCHG
(5V/Div)
VIN Hot-plug without NVC/Battery
Time (100ms/Div)
VIN = 5V, VVP = 3.3V,
RSYS = 10Ω, ISETL = H
VSYS
(5V/Div)
VBAT
(10V/Div)
IIN
(500mA/Div)
VIN
(10V/Div)
VIN Hot-plug with NTC/without Battery
Time (100ms/Div)
VIN = 5V, VVP = 3.3V,
RSYS = 10Ω, ISETL = H
VSYS
(5V/Div)
VBAT
(10V/Div)
IIN
(500mA/Div)
VIN
(10V/Div)
Time (10ms/Div)
VIN = 5V, VBAT = Real Battery,
VVP = 3.3V, RSYS = 10Ω, ISETL = H
VIN Removal
IBAT
(1A/Div)
VSYS
(5V/Div)
VIN
(10V/Div)
VBAT
(10V/Div)
RT9519B
8DS9519B-01 April 2011www.richtek.com
VIN - VSYS Dropout Voltage vs. Temperature
230
255
280
305
330
355
380
405
430
455
480
-50 -25 0 25 50 75 100 125
Temperature (°C)
VIN - VSYS Dropout Voltage (mV)
VIN = 5V, VVP = 3.3V, ISYS = 1A
System Regulation Voltage vs. Temperature
4.30
4.32
4.34
4.36
4.38
4.40
4.42
4.44
4.46
4.48
4.50
-50 -25 0 25 50 75 100 125
Temperature (°C)
System R egulat ion V oltage ( V) 1
VIN = 5V, VVP = 3.3V, ISYS = 0.5A
VBAT - VSYS Dropout Voltage vs. Temperature
55
60
65
70
75
80
85
90
95
100
105
110
115
120
-50 -25 0 25 50 75 100 125
Tem peratu re ( °C)
VBAT - VSYS Dr opo ut Voltage (mV)
VBAT = 3.7V, VVP = 3.3V, ISYS = 1A, USUS = H
VIN Hot-plug with Battery
Time (100ms/Div)
VIN = 5V, VVP = 3.3V, VBAT = Real Battery,
RSYS = 10Ω, ISETL = H
VSYS
(5V/Div)
VBAT
(10V/Div)
IBAT
(1A/Div)
VIN
(10V/Div)
VIN Over Voltage Protection
Time (500ms/Div)
VIN
(10V/Div)
VSYS
(10V/Div)
IBAT
(1A/Div)
VBAT
(10V/Div) VIN = 5V to 15V, VBAT = Real Battery,
RSYS = 10Ω, ISETL = H
OVP Threshold Voltage vs. Temperature
6.32
6.34
6.36
6.38
6.40
6.42
6.44
6.46
6.48
6.50
6.52
-50 -25 0 25 50 75 100 125
Temperature (°C)
OVP Thre shold Voltage (V)
VIN = 5V, VBAT = 3.7V, VVP = 3.3V
Rising
Faling
RT9519B
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Fastcharge Current vs. Battery Voltage
400
450
500
550
600
650
700
750
800
3 3.2 3.4 3.6 3.8 4 4.2
Ba ttery Voltage (V)
Fastcharge Curr ent ( m A) 1
VIN = 5V, VVP = 3.3V, RISETA = 1kΩ, ISETL = H
Precharge Current vs. Battery Voltage
0
20
40
60
80
100
120
140
2 2.2 2.4 2.6 2.8 3
Battery Voltage (V)
Precharge Current (mA
)
VIN = 5V, VVP = 3.3V, RISETA = 0.6kΩ, ISETL = H
ICHG Thermal Regulation vs. Temperature
0
50
100
150
200
250
300
350
400
450
500
-50-25 0 25 50 75100125
Temperature (°C)
ICHG Th er m a l Regulation (mA) 1
VIN = 5V, VBAT = 3.7V, VVP = 3.3V
Battery Regulation Voltage vs. Temperature
4.10
4.12
4.14
4.16
4.18
4.20
4.22
4.24
4.26
4.28
4.30
-50 -25 0 25 50 75 100 125
Temperature (°C)
Batter y Reg ulation Vol tage ( V) 1
VIN = 5V, VVP = 3.3V
RT9519B
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Applications Information
The RT9519B is a fully integrated single-cell Li-ion battery
charger ideal for portable applications. The internal thermal
feedback circuitry regulates the die temperature to optimize
the charge rate for all ambient temperatures. Other features
include under voltage protection and over voltage
protection.
Pre-charge Mode
When the output voltage is lower than 2.8V, the charging
current will be reduce to a fa st-charge current ratio set by
RISETA to protect the battery life ti me.
Fast-charge Mode
When the output voltage is higher tha n 3V, the charging
current will be equal to the fast-charge current set by
RISETA.
Constant Voltage Mode
When the output voltage is near 4.2V, and the charging
current fall below the termination current, after a deglitch
time check of 25ms, the charger will become disabled
a nd CHG will go from L to H.
Re-charge Mode
When the chip is in charge termination mode, the charging
current will gradually go down to zero. However , once the
voltage of the battery drops to below 4.1V, there will be a
deglitch time of 100ms and then the charging current will
resume again.
Charging Current Decision
The charge current can be set a ccording to the following
equations :
SET CHG1
ISETA
CHG_FAST ISETA
SET CHG2
ISETA
CHG_FAST ISETA
CHG_PRE CHG_FAST
If I = H (for I )
V
I = 300
R
If I = L (for I )
V
I = 150
R
I = 10% I
×
×
×
Time Fault
During the fast charge phase, several events may increa se
the charging time.
Input State PGOOD Outp ut
VIN < VUVLO High Impedance
VUVLO < V IN < VBAT + VOS_H High Impedance
VBAT + V OS_H < VIN < VOVP Low Impedance
VIN > V OVP High Impedance
For exa mple the system load current may have a ctivated
the APPM loop which reduces the available charging
current. the device has entered thermal regulation because
the IC junction temperature ha s exceeded TREG.
During each of these events, if 3V < VBAT < 4.1V, the
internal charging time is slowed down proportionately to
the reduction in charging current. However, once the
duration exceed the fault time, the CHG output will fla sh
at a pproximately 2Hz to indicate a fault condition a nd the
charge current will be reduced to about 1mA.
Time fault relea se methods :
(1) Re-plug power
(2) T oggle EN
(3) Enter/exit suspend mode
(4) Remove Battery
(5) OVP
If ISET = H (for ICHG1)
timer = tFCHG
If ISET = L (for ICHG2)
timer = 2 x tFCHG
FCHG_true FCHG ISETA
FCHG_true
FCHG
TIMER
FCHG
FCHG
PCHG
PCHG
2V
t = t
V
t : modifi ed timer in fast
t : original tim er in fast charger
C
t = 14400 sec ( )
1F
t
t = 8
t : timer in pre-charge
μ
×
×
Power Good
VIN Power Good ( PGOOD = L)
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Charge State Indicator
Charge State CHG Ou tput
Charging
Charging Suspended by
Thermal Loop
Low
( for first charg e cycl e )
Safety Timers Expired 2Hz Fla sh
Cha rgi ng Done
R e char gi ng after
T ermination
IC Disabled or no Valid
Input Power
High Impedance
Figure 1
Battery Pack Temperature Monitoring
The battery pack temperature monitoring function ca n be
realized by connecting the TS pin to an external Negative
Temperature Coefficient (NTC) thermistor to prevent over
temperature condition. Charging is suspended when the
voltage at the TS pin is out of normal operating range. The
internal timer is then paused, but the value is maintained.
When the TS pin voltage returns ba ck to normal operating
range, charging will resume a nd the safe charge timer will
continue to count down from the point where it was
suspended. Note that although charging is suspended due
to the battery pack temperature fault, the CHG pin will
continue to remain low a nd indicate charging.
Too Cold Temperature
RCOLD = RNTC
Too Hot Temperature
RHOT = RNTC
COLD
COLD
HOT
HOT
R2 + R = 0.74
R + R1 + R2
R2 + R = 0.28
R + R1 +R2 (2)
(1)
(3)
−
×−
COLD HOT
HOT
COLD
COLD
Fro m (1 ), (2)
R R
R1 = 2.457
R2 = 0.389 R1 R
If R2 < 0
R = 0.74
R + R1
Charge Enable
When EN is low, the charger turns on. When EN is high,
the charger turns off. EN is pulled low for initial condition.
VIN input Current Limit
ISETL ISETU
VIN I nput Curre nt
Limit
L L 95mA
L H 475mA
H X 1.5A
−
COLD COLD
From (3)
R
R1 = R
0.74
Suspend Mode
Set USUS = H, a nd the charge will enter Suspend Mode.
In the Suspend Mode, CHG is in high impedance and
IUSUS(MAX) < 300μA.
Power Switch
For the RT9519B, there are three power scenarios:
(1)When a battery and an external power supply (USB or
ada pter) are connected si multaneously :
If the system load requirements exceed that of the input
current limit, the battery will be used to supplement the
current to the load. However, if the system load
requirements are less tha n that of the input current limit,
the excess power from the external power supply will be
used to charge the battery.
(2)When only the battery is connected to the system :
The battery provides the power to the system.
(3)When only an external power supply is connected to
the system :
+
-
+
-
0.74 x VP Too Cold
Too Hot
TS
R2
RNTC
0.28 x VP
VP
VP
R1
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12 DS9519B-01 April 2011www.richtek.com
Charging Profile
Figure 2
The external power supply provides the power to the
system.
Input DPM Mode
For the RT9519B, the input voltage is monitored when
the USB100 or USB500 is selected. If the input voltage is
lower than VDPM, the input current limit will be reduced to
stop the input voltage from dropping a ny further. This can
prevent the IC from damaging improperly conf igured or
inadequately designed USB sources.
APPM Mode
Once the sum of the charging a nd system loa d currents
becomes higher than the maximum input current limit,
the SYS pin voltage will be reduced. When the SYS pin
voltage is reduced to the VAPPM, the RT9519B will
automatically operate in APPM mode. In this mode, the
charging current is reduced while the SYS current is
increased to maintain system output. In APPM mode,
the battery termination function is disabled.
Battery Supplement Mode Short Circuit Protect
In APPM mode, the SYS voltage will continue to drop if
the charge current is zero and the system load increa ses
beyond the input current limit. When the SYS voltage
decrea ses below the battery voltage, the battery will kick
in to supplement the system load until the SYS voltage
rises above the battery voltage.
While in supplement mode, there is no battery supplement
current regulation. However, a built in short circuit
protection feature is available to prevent any abnormal
current situations. While the battery is supplementing the
load, if the difference between the battery and SYS voltage
becomes more than the short circuit threshold voltage,
SYS will be disabled. After a short circuit recovery time,
tSHORT_R, the counter will be restarted. In supplement
mode, the battery termination function is disa bled. Note
that for the battery supply mode exit condition, VBAT −
VSYS < 0V.
Thermal Regulation and Thermal Shutdown
The RT9519B provides a thermal regulation loop function
to monitor the device temperature. If the die temperature
rises above the regulation temperature, TREG, the charge
current will automatically be reduced to lower the die
temperature. However , in certain circumstances (such a s
high VIN, heavy system load, etc.) even with the thermal
loop in place, the die temperature may still continue to
increa se. In this ca se, if the temperature rises a bove the
thermal shutdown threshold, TSD, the internal switch
between VIN and SYS will be turned off. The switch
between the battery and SYS will remain on, however , to
allow continuous battery power to the load. Once the die
temperature decreases by ΔTSD, the internal switch
between VIN and SYS will be turned on again and the
device returns to normal thermal regulation.
Time
Battery Voltage
Charging Current
ICHG_PRE = 10% x ICHG_FAST
VPRECH
ITERM
VRECH
4.16 to 4.2 to 4.23V
-40 to 85°C
ITERM2
ISETL = L, ISETU = H
ISETL = H, ISETU = X
ITERMI = 10% x ICHG_FAST
If
If ISETL = L, ISETU = L
ITERMI = 3.3% x ICHG_FAST
RT9519B
13
DS9519B-01 April 2011 www.richtek.com
APPM Profile
1.5A Mode :
1A
0
-1A
2A
3A
-2A
-3A
5V
4.4V
4.2V
4.0V
IBAT
ISYS
IVIN
T1 T2 T3 T4 T5 T6 T7
VBAT
VIN
VSYS
VAPPM
ISYS V
SYS I
VIN I
BAT
T1, T7 0 SY S Regulation Voltage CHG_MAX CHG_MAX
T2, T6 < IVIN_OC − CHG_MAX SY S Regulation Voltage ISYS + CHG _MAX CH G_MAX
T3, T5 > IVIN_OC − CHG_MAX
< IVIN_OCs A uto Charge Voltage T hreshold VIN_OC V
IN_OC − ISYS
T4 > IVIN_OC V
BAT − IBAT x RDS(ON) V
IN_OC I
SYS−IVIN_OC
0.25A
0
-0.25A
0.5A
0.75A
-0.5A
-0.75A
5V
4.2V
4.0V
IBAT
ISYS
IUSB
T1 T2 T3 T4 T5 T6 T7
VBAT
VUSB
VSYS
VAPPM
4.4V
ISYS V
SYS I
USB I
BAT
T1, T7 0 SY S Regulation Voltage CHG_M AX CHG_MAX
T2, T6 < IVIN_OC (USB) − CHG_MAX SYS Regulation Voltage ISYS + CHG_MAX CHG_MAX
T3, T5 > IVIN_OC (USB ) − CHG _MAX
< IVIN_OC (USB) Auto Char ge Voltage
Threshold IVIN_OC (USB) IVIN_OC (USB) − ISYS
T4 > IVIN_OC (USB) VBAT − IBAT x RDS(ON) I
VIN_OC (USB) ISYS − IVIN_OC (U SB)
USB 500mA Mode :
RT9519B
14 DS9519B-01 April 2011www.richtek.com
VSET vs VREG , ISET vs ICHG
4.16 to 4.2 to 4.23V
4.01 to 4.05 to 4.08V
ICHG +/-5%
0.5 x ICHG +/-5%
VSET
ISET
VREG
ICHG
For JEITA Battery Temperature Standard :
CV regulation voltage will change at the following battery Temp ranges
0°C to 10°C and 45°C to 60°C
CC regulation current will change at the following battery Temp ranges
0°C to 10°C and 45°C to 60°C
0°C 10°C 45°C 60°C T emperat ure +/- 2°C
4.16 to 4.2 to 4.23V
4.01 to 4.05 to 4.08V
ICHG +/- 5%
0.5 x ICHG +/- 5%
0.5 x ICHG +/- 5%
Temperature +/- 2°C
4.01 to 4.05 to 4.08V
RT9519B
15
DS9519B-01 April 2011 www.richtek.com
RT9519B Operation State Digram for Charging
Operation State Digram for TS PIN
Any State
or VIN < VUVLO,
or VIN > VOVP,
Or VIN - VBAT < VOS_H
or USUS = H
or EN = H
Charger
Disable
Standby Sta te
Sleep State
VIN – VBAT
> VOS_H
VBAT > 3V
Pre-Charge State
ICHG_PRE =
10% x ICHG_FAST
Time > tPCHG
Fast-Charge State
If ISET = H
ICHG_FAST = (VISETA / RISETA) x 300
If ISET = L
ICHG_FAST = (VISETA / RISETA) x 150
If VSET = H
Check VBAT > 4.1V
If VSET = L
Check VBAT > 3.95V
Time > tTERMI = 25msec
Charge Done Sta te
CHG = High imp edanc e
& ICHG = 0A
If VSET = H
Check VBAT < 4.1V
If VSET = L
Check VBAT < 3.95V
Re-Charge State
CHG = High
impedance
Timer-Out State
CHG = flash 2Hz
& ICHG to 1mA
Time > tFCHG
VUVLO< VIN < VOVP
& EN = L
&USUS = L
No
Yes
Yes
No
Yes
No
Yes
No
Yes
Yes
No
Yes
Yes
No
Yes
No
ISETL = L & ISETU = H
ISETL = H & ISETU = X
Check ICHG < 10% x ICHG_FAST
If ISETL = L & ISETU = L
Check ICHG < 3.3% x ICHG_FAST
If
Any State
74% x VVP < VTS < 2.85V
Or VTS < 28% x VVP
No
Yes
TS fault State
ICHG = 0A
Keep CHG state
VTS > 2.85V
No
Yes
Battery Remove State
ICHG = 0A
CHG = High impedance
Reset timer and CHG
RT9519B
16 DS9519B-01 April 2011www.richtek.com
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation de pends on the thermal re sistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and a mbient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the a mbient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications of
the RT9519B, the maximum junction temperature is 125°C
and TA is the a mbient temperature. The junction to a mbient
thermal resistance, θJA, is layout dependent. For WQF N-
20L 3x3 packages, the thermal re sistance, θJA, is 68°C/
W on a standard JEDEC 51-7 four-layer thermal test board.
The maximum power dissipation at TA = 25°C can be
calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (68°C/W) = 1.471W for
WQF N-20L 3x3 package
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal
resistance, θJA. For the R T9519B pa ck age, the derating
curve in Figure 3 allows the designer to see the effect of
rising ambient temperature on the maximum power
dissipation.
Figure 3. Derating Curves for RT9519B Package
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125
Ambient T emperat ure (°C)
Maximum Power Di ssipati on (W ) 1
Four-Layer PCB
Layout Considerations
The RT9519B is a fully integrated low cost single cell Li-
ion battery charger ideal for portable a pplications. Careful
PCB layout is necessary . For best performance, pla ce all
peripheral components as close to the IC a s possible.
A short connection is highly recommended. The following
guidelines should be strictly followed when designing a
PCB layout for the RT9519B.
`Input and output capacitor should be placed close to
the IC a nd connected to ground pla ne. The input tra ce
on the PCB should be placed far away from sensitive
devices and shielded by the ground.
`The GND and exposed pa d should be connected to a
strong ground plane for heat sinking and noise protection.
`The connection of RISET A should be isolated from other
noisy traces. A short wire is recommended to prevent
EMI and noise coupling.
RT9519B
17
DS9519B-01 April 2011 www.richtek.com
Figure 4. PCB Layout Guide
GND
VIN VSET
VP
ISETU
TS
TIMER
BAT
USUS
SYS
SYS
SYS
TS_FAULT
ISETA ISET
BAT
PGOOD
CHG
EN
14
15
13
12
17181920
1
2
3
4
9876
GND
21 115
16
10
ISETL
GND CSYS R4
CIN
R1 CVP
GND
TS
CBAT
CTIMER
GND
SYS
R2R3
GND RISETA
Connect th e Exposed Pad
to a ground plane.
The RISETA connection
copp er area shou l d be
minimi zed and ke pt fa r away
from noise sources.
Place CIN near Th e IC to
improve performance.
GND should be connected
to a strong ground plane for
heat sink i ng and no i se
protection.
NTC
RT9519B
DS9519B-01 April 2011www.richtek.com
Richtek Technology Corporation
Headquarter
5F, No. 20, Taiyuen Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
18
Richtek Technology Corporation
Taipei Office (Marketing)
5F, No. 95, Minchiuan Road, Hsintien City
Taipei County, Taiwan, R.O.C.
Tel: (8862)86672399 Fax: (8862)86672377
Email: marketing@richtek.com
Outline Dimension
Dimens ions In Millimeters Dime nsions In Inc hes
Symbol Min Max Min Max
A 0.700 0.800 0.028 0.031
A1 0.000 0.050 0.000 0.002
A3 0.175 0.250 0.007 0.010
b 0.150 0.250 0.006 0.010
D 2.900 3.100 0.114 0.122
D2 1.650 1.750 0.065 0.069
E 2.900 3.100 0.114 0.122
E2 1.650 1.750 0.065 0.069
e 0.400 0.016
L 0.350 0.450
0.014 0.018
W-Type 20L QFN 3x3 Package
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
DETAIL A
Pin #1 ID a nd T ie Bar Mark Options
1
1
22