4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
Excellent Transmit LO/Output Buffer Stage
3x3mm, QFN
23.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
4.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% RF, DC and Output Power Testing
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
Page 1 of 6
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
4.0
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
20.0
12.0
23.0
+/-1.5
65.0
4.5
+20.0
+21.0
+4.0
-0.5
90
Max.
11.0
-
-
-
-
-
-
-
-
+5.5
0.0
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
B1007-QT
Mimix Broadband’s two stage 4.0-11.0 GHz GaAs MMIC
buffer amplifier has a small signal gain of 23.0 dB with
a +20.0 dBm P1dB output compression point. The
device also provides variable gain regulation with
adjustable bias. The device is ideally suited as an LO or
RF buffer stage with broadband performance at a very
low cost. The device comes in an RoHS compliant
3x3mm QFN surface mount package offering excellent
RF and thermal properties. This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
General Description
September 2007 - Rev 15-Sep-07
Buffer Amplifier Measurements
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
B1007-QT
September 2007 - Rev 15-Sep-07
XB1007-QT, Vd = 4V, Id = 100 mA: S11 vs Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
234567891011121314
Frequency (GHz)
S11 (dB)
XB1007-QT, Vd = 4V, Id = 100 mA: Gain vs Frequency
0
5
10
15
20
25
30
234567891011121314
Frequency (GHz)
S21 (dB)
XB1007-QT, Vd = 4V, Id = 100 mA: S22 vs Frequency
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
234567891011121314
Frequency (GHz)
S22 (dB)
Buffer Amplifier Measurements (cont.)
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
B1007-QT
September 2007 - Rev 15-Sep-07
XB1007-QT, Vd = 4V, Id = 90 mA, Pin = -15dBm: OIP3 vs Frequency
10
15
20
25
30
35
45678910
Frequency (GHz)
OIP3 (dBm)
XB1007-QT, Pin = -15dBm: OIP3 vs Gain
0
5
10
15
20
25
30
35
6 8 10 12 14 16 18 20 22 24 26
Gain (dB)
OIP3 (dBm)
4 GHz
6 GHz
8 GHz
10 GHz
XB1007-QT, Pin = -15dBm: OIP3 vs Current
0
5
10
15
20
25
30
35
0 20406080100120140
Drain Current (mA)
OIP3 (dBm)
4 GHz
6 GHz
8 GHz
10 GHz
XB1007-QT, Vd = 4V, Id = 100mA: Noise Figure over Temperature
0
1
2
3
4
5
6
7
8
9
10
4 5 6 7 8 9 10111213141516
Frequency (GHz)
Noise Figure (dB)
25 C
50 C
75 C
1
2
3
4
1
6
1
5
1
4
1
3
12
11
10
9
5 6 7 8
RF In
VG gnd
RF Out
gnd
gnd
gnd gnd
gnd
gnd
gnd
gnd gnd gnd VD
gnd
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
B1007-QT
Page 4 of 6
Package Dimensions / Layout
Functional Block Diagram
Pin Designations
(Note: Engineering designator is 8MPA0811)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Pin Number
1
2
3-4
5
6-10
11
12
13
14-16
Pin Name
GND
RF In
GND
VG
GND
RF Out
GND
VD
GND
Pin Function
Ground
RF Input
Ground
Gate Bias
Ground
RF Output
Ground
Drain Bias
Ground
Nominal Value
-0.5V
4.5V, 130 mA
September 2007 - Rev 15-Sep-07
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
B1007-QT
Page 5 of 6
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most
reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is
-0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XB1007-QT Vd=4.0 V Id=130 mA
1.00E+05
1.00E+06
1.00E+07
1.00E+08
1.00E+09
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
MTTF (hours)
XB1007-QT Vd=4.0 V Id=130 mA
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E+04
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
FITS
XB1007 - QT Vd= 4 .0 V Id=130 m A
140
142
144
146
148
150
152
154
156
158
160
162
164
166
168
170
172
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
Rth (deg C/W)
XB1007 - QT Vd=4.0 V Id=13 0 mA
120
130
140
150
160
170
180
190
200
210
220
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
Tch (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
September 2007 - Rev 15-Sep-07
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
B1007-QT
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
September 2007 - Rev 15-Sep-07
