SEEQ Technology, incorporated Features M Military, Extended and Commercial Temperature Range 55C to +#125C Operation (Military) -40C to +85C Operation (Extended) 0C to +70C Operation (Commercial) @ End of Write Detection + Ready/Busy Pin + Optional DATA Polling Feature @ High Endurance Write Cycles 10,000 Cycles/Byte Minimum H On-Chip Timer Automatic Byte Erase Before Byte Write 2ms Byte Write (2864H) 5V+10% Power Supply Power Up/Down Protection Circuitry 200 ns max. Access Time MIL-STD-883 Class B Compliant SMD 5962 Compliant Description . SEEQ's 2864 is a 5 V only, 8K x 8 NMOS electrically erasable programmable read only memory (EEPROM). It is packaged in most popular thru hole and surface mount Block Diagram Row ADDRESS LATCHES AODRESS DECODE LATCH ENABLE ROY/BUSYa _ EDGE CE ) DETECTION CKT WE 1 AND LATCHES vO BUFFERS WOo7 2864/2864H Timer E? 64K Electrically Erasable PROMs August 1992 packages and has a ready/busy pin. This EEPROM is ideal for applications which require non-volatility and in- system data modification. The endurance, the number of times which a byte may be written, is a minimum of 10 thousand cycles. The EEPROM has an internal timer that automatically times out the write time. The on-chip timer, along with the input latches, frees the microcomputer system for other tasks during the write time. The standard byte write cycle time is 10 ms. For systems requiring faster byte write, the 2864H is specified at2 ms. Anautomatic byte erase is per- formed before a byte operationis started. Once a byte has Pin Configuration DUAL-IN-LINE TOP VIEW LEADLESS CHIP CARRIER TOP VIEW RDY/BUSY a BSS Sead teod ITE ISU ISU ASE 7 ata ica mar yeu nie > o 7 4 rise 3 os r vs a= 2 125 HSS = o 13! 1 NOTE: The PLCC has the same pin configuration as the LCC except pins 1 and 17 are don't connects. Pin Names AA, ADDRESSES COLUMN (LOWER ORDER BITS) A.A, ADDRESSES ROW CE CHIP ENABLE OE OUTPUT ENABLE WE WRITE ENABLE VO,, DATA INPUT (WRITE OR ERASE) DATA OUTPUT (READ) RDY/BUSY | DEVICE READY/BUSY NC NO CONNECT SEE Teahnetegy, incerperated MD400100/A 1-27been written, the ready/busy pin signals the microproces- sor that itis available for another write or a read cycle. All inputs are TTL for both the byte write and read mode. Data retention is specified for ten years. These two timer EEPROMs are ideal for systems with limited board area. For systems where cost is important, SEEQ has a latch only "52B" family at 16K and 64K bit densities. All "52B" family inputs, except for write enable, are latched by the falling edge of the write enable signal. Device Operation There are five operational modes (see Table 1) and, except for the chip erase mode, only TTL inputs are required. To write into a particular location, a 150 ns TTL pulse is applied to the write enable (WE) pin of a selected (CE low) device. This, combined with output enable (OE) being high, initiates a 10 ms/2ms write cycle. During abyte write cycle, addresses are latched on either the falling edge of CE orWE, whichever one occurred last. Data is latched on the rising edge of CE or WE, whichever one Mode Selection (Table 1) Mode/Pin | CE | OE | WE vo RDY/BUSY (20) | (22) | (27) | (11-13, 15-19) (1)* Read ee Dour High Z Standby |V,,| X | X High Z High Z - Byte Write} V,. |} Via | Vac Dy Vor Write X |v, | X | High 2/D,,,]) High Z Inhibit X |X | Vy, | High 2D, | HighZ *Pin 1 has an open drain output and requires an externa! 3K resistor to V... The resistor value is depent the number of OR- tied RDY/BUSY pins. Recommended Operating Conditions 2864/2864H occurred first. The byte is automatically erased before data is written. While the write operation is in progress , the RDY/BUSY output is at a TTL low. An internal timer times out the required byte write time and at the end of this time, the device signals the RDY/BUSY pin to a TTL high. The RDY/BUSY pin is an open drain output and a typical 3K pull-up resistor to V .,. is required. The pull-up resistor value is dependent on the number of OR-tied RDY/BUSY pins. If RDY/BUSY is not used it can be left unconnected. Chip Erase Certain applications may require all bytes to be erased simultaneously. This feature is optional and the timing specifications are available from SEEQ. DATA Polling (Optional Feature) DATA polling is a method of minimizing write times by determining the actual end-point of a write cycle. If aread performed to any address while the device is still writing, itwill present the ones-complement of the last byte written. When the device has completedits write cycle, aread from the last address written will result in valid data. Thus, software can simply read from the part until the last data byte written is read correctly. A DATA polling read can occur immediately after a byte is loaded into a page, prior to the initiation of the internal write cycle. DATA polling attempted during the middle of apage load cycle will present a ones-complement of the most recent data byte loaded into the page. Timing for a DATA polling read is the same as a normal read. 2864/2864H-200 2864/2864H-250 2864/2864H-300 Temperature Commercial 0C to +70C 0C to +70C 0C to +70C Range Extended 40C to +85C ~40C to +85C 40C to +85C Military -55C to +125C ~55C to +125C 55C to +125C Vig Supply Voltage 5VL10% 5V+10% 5V+10% Endurance and Data Retention Symbol Parameter Value Units Condition N Minimum Endurance 10,000 Cycles/Byte MIL-STD 883 Test Method 1033 Ton Data Retention >10 Years MIL-STD 883 Test Method 1008 NOTE: 1. Characterized. Not tested. SEEQ Technology, Incorporated MD400100/APower Up/Down Considerations The 2864 has internal circuitry to minimize a false write during system V,,. power up or down. This circuitry prevents writing under any one of the following conditions. 1. Vo, is less than 3 VIN 2. A negative Write Enable (WE) transition has not occured when V,, is between 3 Vand 5 V. Writing will also be prevented if CE or OE are in TTL logical states other than that specified for a byte write in the Mode Selection table. *COMMENT: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the op- erational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2864/2864H Absolute Maximum Stress Ratings* Temperature SUOPAGO oss.sesccsesereessscsssesecseneetsnensenee -65C to +150C Under Bias Military/Extended 0... .eccesssssesseees -65C to +135C COMMECIAl oe eesssesscseessssesvesssesseeee -10C to +80C D.C. Voltage applied to all Inputs or Outputs With respect tO GrOUNd ......0cccsccerseeee +6.0Vto-0.5V Undershoot/Overshoot pulse of less then 10 ns (measured at 50% point) applied to all inputs or outputs with respect to ground ....(undershoot) 1.0 V (overshoot) + 7.0 V D.C. Operating Characteristics (Over the operating V,, and temperature range) Limits Symbol | Parameter Min. Max. Units Test Condition lee Active V,, |_Mil/Ext. 120 mA CE = OE =V,: All VO Open; Current Commercial 110 Other Inputs = V,,. Max. gg Standby V,, | Mil./Ext. 50 mA CE = V,,, OE = V,; All YO Open; Current Commercial 40 Other Inputs = V.,, Max. hy Input Leakage Current 10 pA Vw = Veco Max. lio Output Leakage Current 10 HA Vour = Veg Max. Vi Input Low Voltage -0.1 0.8 Vv Vie Input High Voltage 2.0 Veo +1 V Vor Output Low Voltage 0.4 Vv lo, = 2.1 mA Von Output High Voltage 2.4 Vv log = 7400 pA A.C. Characteristics Read Operation (Over the operating V.,, and temperature range) Limits 2864H-200 2864H-250 2864H-300 2864-200 2864-250 2864-300 Symbol | Parameter Min. | Max. | Min. | Max. | Min. | Max. | Units | Test Conditions tre Read Cycle Time 200 250 300 ns | CE=OE=V, ter Chip Enable Access Time 200 250 300 ns_ | OE=V, tha Address Access Time 200 250 300 | ns | CE=O0E=V, toe Output Enable Access Time 90 90 100 ns | CE=V, toe Output Enable High 0 60 0 60 0 60 ns CE = Vi, to Output Not being Driven tou Output Hold from Address 0 0 0 ns | CEorOE=V, Change, Chip Enable, or Output Enable whichever occurs first _ SEEQ Technelegy, Incerperaind 4-29 MD400100/ARead Cycle Timing tae ADDRESSES 2864/2864H 2 = ny ADORESSES VALIO 2. WE is noise protected. Less than a 20 ns write pulse will not activate a write cycle. 3. Data must be valid within 1 1s maximum after the initiation of a write cycle. z , Se nn oe --- J tol] ton tm - OUTPUT . se OUTPUT 1 7 tea NOTES: 1. OE may be delayed to t,, t,, after the falling edge of GE without impact on t,. 2. f,, is specified from OE or CE, whichever occurs first. AC Characteristics Write Operation (Over the operating V.,. and temperature range) Limits 2864H-200 2864H-250 2864H-300 2864-200 2864-250 2864-300 Symbol! | Parameter Min. Max. Min. Max. Min. Max. Units twe Write Cycle Time/Byte 2864 10 10 10 ms 2864H 2 2 2 ms ths Address to WE Set Up Time 10 10 10 ns tes CE to Write Set Up Time 0 0) 0 ns tal?! WE Write Pulse Width 150 150 150 ns ty Address Hold Time 50 50 50 ns tos Data Set Up Time 50 50 50 as tow Data Hold Time 20 20 20 ns ten CE Hold Time 0 0 0 ns tors OE Set Up Time 10 10 10 ns toen OE Hold Time 10 10 10 ns | ton Data Latch Time 50 50 50 ns toy! Data Valid Time 1 1 1 ys tos Time to Device Busy 200 200 200 ns twr Write Recovery Time 10 10 10 ps Before Read Cycle NOTES: 1. This parameter is measured only for the initial qualification and after process or design changes which may affect capacitance. SEEQ Technology, incerperaing 1-30 MD400100/A2864/2864H Capacitance 1,!"\ = 25C, f = 1 MHz Symbol Parameter Max Conditions Cw Input Capacitance 6 pF Vy 2 OV Cour Data (/O) Capacitance 10 pF Vio = OV A.C. Test Conditions Output Load: 1 TTL gate and C, = 100 pF Input Rise and Fall Times: < 20 ns Input Pulse Levels: 0.45 V to 2.4 V Timing Measurement Reference Level: Inputs 1 V and 2 V Outputs 0.8 V and 2 V Write Cycle Timing logs a + toEH oe oF ee / \ \. ff ft. tas ta | tou CE tes \ V | | Peto} Lt x ae WE \ J ae t | (OE DF DH "we ton DATA 07 fa o-7 DATA IN OUT lps tce - t | 'pv at t aa | ROY/BUSY [pp be $$$ wo, at [J WRITE CYCLE >_< READ CYCLE SEEQ Technology, incorporated 4-31 MD400100/AOrdering Information DBD M dd ae 2864/2864H PACKAGE TEMPERATURE RANGE D~CERAMIC DIP M--5S*C to + 125C L-Lec (MILITARY) F - FLATPACK N-PLCC E - ~40 C to 485C P PLASTIC DIP (EXTENOED) UX - UNENCAPSULATED DIE Q-0Cto+70C (COMMERCIAL) SEEQ PART TYPE 8K x 8 EEPROM EEPROM BYTE WRITE TIME (BLANK) - STANDARD WRITE TIME H - FAST WRITE TIME ACCESS TIME SCREENING OPTION 200 - 200 ns /B- MIL 883 CLASS B 250 250 ns SCREENED 300 - 300 ns. Technotegy, incorporated MD400100/A 1-32