2N6517RLRAG - ON Semiconductor - Datasheet.Directory

High Voltage Transistors

MAXIMUM RATINGS

Rating Symbol 2N6515 2N6517

2N6520 Unit

Collector–Emitter Voltage VCEO 250 350 Vdc

Collector–Base Voltage VCBO 250 350 Vdc

Emitter–Base Voltage

2N6515, 2N6516, 2N6517

2N6519, 2N6520

VEBO 6.0

5.0

Vdc

Base Current IB250 mAdc

Collector Current –

Continuous IC500 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage

Junction

Temperature Range

TJ, Tstg –55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA 200 °C/W

Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0 ) 2N6515

2N6517, 2N6520

V(BR)CEO 250

350 –

–

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0 ) 2N6515

2N6517, 2N6520

V(BR)CBO 250

350 –

–

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0) 2N6515, 2N6517

2N6520

V(BR)EBO 6.0

5.0 –

–

Vdc

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 3 1Publication Order Number:

2N6515/D

NPN

2N6515

2N6517

PNP

2N6520

CASE 29–04, STYLE 1

T O–92 (TO–226AA)

123

Voltage and current are negative

for PNP transistors

COLLECTOR

BASE

EMITTER COLLECTOR

BASE

EMITTER

NPN

PNP

NPN 2N6515 2N6517 PNP 2N6520

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (Continued)

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0 ) 2N6515

(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520

ICBO –

–50

nAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517

(VEB = 4.0 Vdc, IC = 0) 2N6520

IEBO –

–50

nAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 10 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 30 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 50 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 100 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

hFE 35

–

300

200

220

200

–

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) –

–

0.30

0.35

0.50

1.0

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat) –

–

0.75

0.85

0.90

Vdc

Base–Emitter On Voltage

(IC = 100 mAdc, VCE = 10 Vdc) VBE(on) – 2.0 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product(1)

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb – 6.0 pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517

2N6520

Ceb –

–80

100

SWITCHING CHARACTERISTICS

Turn–On Time

(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton – 200 µs

Turn–Off Time

(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff – 3.5 µs

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

NPN 2N6515 2N6517 PNP 2N6520

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Figure 1. DC Current Gain – NPN 2N6515

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

hFE, DC CURRENT GAIN

200

100

VCE = 10 V TJ = 125°C

25°C

-55°C

Figure 2. DC Current Gain – NPN 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

VCE = 10 V TJ = 125°C

25°C

-55°C

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

VCE = -10 V

TJ = 125°C

25°C

-55°C

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

hFE, DC CURRENT GAIN

100

TJ = 25°C

VCE = 20 V

f = 20 MHz

TJ = 25°C

VCE = -20 V

f = 20 MHz

200

100

Figure 3. DC Current Gain – PNP 2N6520

Figure 4. Current–Gain – Bandwidth Product – NPN

2N6515, 2N6517 Figure 5. Current–Gain – Bandwidth Product – PNP

2N6520

NPN 2N6515 2N6517 PNP 2N6520

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Figure 6. “On” Voltages – NPN 2N6515, 2N6517 Figure 7. “On” Voltages – PNP 2N6520

Figure 8. Temperature Coefficients – NPN 2N6515,

2N6517 Figure 9. Temperature Coefficients – PNP 2N6520

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

V, VOLTAGE (VOLTS)

1.4

1.2

0.6

0.8

1.0

NPN

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2.5

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

Figure 10. Capacitance – NPN 2N6515, 2N6517

VR, REVERSE VOLTAGE (VOLTS)

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

100

2.0

3.0

5.0

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

1.0

V, VOLTAGE (VOLTS)

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

-1.4

-1.2

-0.6

-0.8

-1.0

-0.4

-0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

-2.5

RθVC for VCE(sat)

RθVB for VBE

25°C to 125°C

-55°C to 25°C

-55°C to 125°C

IB 10

RθVC for VCE(sat)

RθVB for VBE

25°C to 125°C

-55°C to 25°C

-55°C to 125°C

IB 10

C, CAPACITANCE (pF)

7.0

-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

TJ = 25°C TJ = 25°C

Ccb

Ceb

Ccb

Ceb

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

-2.5

100

2.0

3.0

5.0

1.0

7.0

Figure 11. Capacitance – PNP 2N6520

NPN 2N6515 2N6517 PNP 2N6520

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Figure 12. Turn–On Time – NPN 2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

t, TIME (ns)

1.0k

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

IC, COLLECTOR CURRENT (mA)

-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70

100

200

300

500

700

t, TIME (ns)

td @ VBE(off) = 2.0 V

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

td @ VBE(off) = 2.0 V

VCE(off) = -100 V

IC/IB = 5.0

TJ = 25°C

t, TIME (ns)

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

100

200

300

500

700

1.0k

2.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

VCE(off) = -100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

1.0k

100

200

300

500

700

Figure 13. Turn–On Time – PNP 2N6520

Figure 14. Turn–Off Time – NPN 2N6515, 2N6517 Figure 15. Turn–Off Time – PNP 2N6520

NPN 2N6515 2N6517 PNP 2N6520

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Figure 16. Switching Time Test Circuit

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k

t, TIME (ms)

Figure 17. Thermal Response

500

200

100

5.0

2.0

1.0

0.5

IC, COLLECTOR CURRENT (mA)

0.5 1.0 2.0 5.0 10 20 50 100 200 500

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

FIGURE A

PPPP

1/f

DUTYCYCLE t1f 

PEAK PULSE POWER = PP

TA = 25°C

1.0 ms

10 µs

TC = 25°C

100 µs

100 ms

+10.8 V

-9.2 V

+VCC

2.2 k 20 k

50 Ω SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

-1.35 V (ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH ≈ 100 µs

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)

ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)

CURRENT LIMIT

THERMAL LIMIT

(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

CURVES APPLY

BELOW RATED VCEO

2N6515

2N6517, 2N6520

NPN 2N6515 2N6517 PNP 2N6520

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

HSECTION X–X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.022 0.41 0.55

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

NPN 2N6515 2N6517 PNP 2N6520

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