850-nm-multimode-1-x-n-10-Gbps - ULM Photonics GmbH

U-L-M photonics GmbH Fon: +49 731 550194-014

Lise-Meitner-St 13 Fax: +49 731 550194-026

D - 89081 Ulm email: sales@ulm-photonics.de

Germany www.ulm-photonics.de

1 for chip only

ELECTRO-OPTICAL-CHARACTERISTICS, (VCSEL CHIP)

PARAMETER SYMBOL UNITS MIN TYP MAX TEST CONDITIONS

Emission wavele ngth λRnm 835 850 860 T = 20°C

Threshold current ITH mA 1.5 2.5 T = 20°C

Threshold current variation ∆ITH mA 1.0 T = 0 .. 70°C

Threshold voltage UTH V1.5 1.8 2.0

Laser current IOP mA 6 8.0 Popt = 3 mW 1

Laser vol ta ge UOP V2.0 Popt = 3 mW 1

Wallplug efficiency ηWP %20 P

opt = 3 mW 1

Slope efficiency W/A 0.2 0.5 0.7 T = 0 .. 70°C

Variation of slope efficiency W/A 0.2 T = 0 .. 70°C

Differential series resistance RSΩ25 50 100 Popt = 3 mW 1

3dB modulation bandwidth ν3dB GHz 8 Popt = 3 mW 1

Rise and fall time tR/tFps 40/60 10%..90%;

Poff=0.5mW, Pon=3.0mW

Relative intensit y noise RIN dB/Hz-0.5 -130 -120 Popt = 3 mW @ 1 GHz

Wavelength tuning over current nm/mA 0.15 0.20

Wavelength tuning o ver temp. nm/K 0.07

Thermal resistance RTHERMAL K/mW 2

Beam divergence θ° 152535 P

opt = 3 mW 1,

full width 1/e²

Spectral bandwidth ∆λ nm 2rms

ABSOLUTE MAXIMUM RATINGS

Storage temperature -40 .. 85°C

Operating temperature 0 .. 70°C

Electrical power dissipation 30 mW

Continous forward current 12 mA

Revers e vo lt a ge 8V @ I = 10 µA

Soldering temperature 330°C

GEOMETRICAL SPECIFICATIONS

Chip area 250x250 µm²

Chip thickness 150 +/- 20 µm

Emission area centered on chip Φ < 15µm

Substrate side metallization VCSEL cathode

Top side metallizatio

VCSEL anode

Warning:

Laser radiation, avoid

exposure to beam.

Class 3B laser product,

potenti al eye ha zard.

• High speed up to 10 Gb/s

• Low current and voltage

• Lowest power consumption

• Single devices and linear arrays

Available on chip level,

array formats

or in TO18/46 can

850 nm multimode

1 x n, 10 Gbps VCSEL

for high speed data transmission