MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-M,-H Average on-state current ............ 25A Average forward current ............ 25A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * IF (AV) * VRRM * * * * APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 (RZ) 26 12.5 2-6.5 A1K2 CR K1 K1 G1 20 (EZ) Tab#110, t=0.5 A1 30 9 LABEL K1 G1 3-M5 21 20 6.5 17.5 A2 SR CR K 1K2 A2 SR K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Voltage class Parameter M H Unit Repetitive peak reverse voltage 400 800 V Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Ratings Unit 39 A Single-phase, half-wave 180 conduction, TC=93C 25 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 500 A I2t I2t for fusing Value for one cycle of surge current 1.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~125 C Tstg Storage temperature -40~125 C Viso Isolation voltage Parameter IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 4.0 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 4.0 mA VTM, VFM Foward voltage Tj=125C, ITM=IFM=75A, instantaneous meas. -- -- 1.5 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 10 -- 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.8 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) -- -- -- Tj Tstg dv/dt VGT VGD IGT -- -- -- -- I2t di/dt Thyristor no t fo Re rN c o ew m m De e n sig d n Diode Item PGM PG (AV) VFGM IFGM -- -- -- -- -- Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM IDRM VTM VFM Rth (j-c) Rth (c-f) Thyristor -- Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 500 Tj=125C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 RATED SURGE (NON-REPETITIVE) CURRENT 1.0 1.4 1.8 2.2 400 300 200 100 0 2.6 FORWARD VOLTAGE (V) IFGM=2.0A GATE VOLTAGE (V) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 50mA 7 5 Tj= 25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 TRANSIENT THERMAL IMPEDANCE (C/W) VFGM=10V 10 1 GATE CURRENT (mA) 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 130 no t fo Re rN c o ew m m De e n sig d n AVERAGE POWER DISSIPATION (W) 40 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 35 360 30 120 90 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 25 20 60 =30 15 10 0 5 10 15 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 110 100 90 80 25 20 =30 5 10 90 120 180 20 15 25 AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 DC 270 120 CASE TEMPERATURE (C) 40 180 120 90 30 60 20 =30 360 10 0 0 60 AVERAGE CURRENT (A) 50 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 0 10 5 15 20 25 30 360 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 70 =30 60 90 60 35 50 40 0 5 10 15 180 270 120 20 25 30 DC 35 40 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 80 LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 =180 70 60 360 50 40 125 CASE TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) 360 120 5 0 AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (C) 180 90 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 60 30 30 20 10 0 120 115 110 10 20 30 40 50 60 RMS CURRENT (A) 70 80 180 100 95 90 85 0 =30,60,90 105 80 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 0 10 20 30 40 50 60 70 80 RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 no t fo Re rN c o ew m m De e n sig d n 80 CASE TEMPERATURE (C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 120 60 90 50 60 =30 40 30 20 360 10 0 125 180 70 10 20 30 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 80 50 40 115 =30 0 10 DC OUTPUT CURRENT (A) (PER TWO MODULES) CASE TEMPERATURE (C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 90 60 40 =30 30 20 360 10 0 RESISTIVE, INDUCTIVE LOAD 0 10 20 30 40 50 60 DC OUTPUT CURRENT (A) (PER THREE MODULES) 30 40 50 125 120 50 20 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 80 60 90 120 180 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 70 60 85 RESISTIVE, INDUCTIVE LOAD 0 360 120 70 80 120 360 115 110 RESISTIVE, INDUCTIVE LOAD 105 100 95 90 =30 60 90 120 85 80 0 10 20 30 40 50 60 70 80 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999