Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM25RZ/EZ-M,-H
•IT (AV) Average on-state current ............ 25A
•IF (AV) Average forward current ............ 25A
•VRRM Repetitive peak reverse voltage
........ 400/800V
•VDRM Repetitive peak off-state voltage
........ 400/800V
•MIX DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93.5
80
17.5 20 20 3–M5
2–φ6.5
26
12.5
K1 G1
Tab#110, t=0.5
30
21
6.5
9
(RZ)
A
1
K
2
CR K
1
K
1
G
1
A
2
(EZ)
A
1
CR K
1
K
2
K
1
G
1
SR
A
2
SR
LABEL
not Recommend
for New Design
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=93°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=0.5A, Tj=125°C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
39
25
500
1.0 × 103
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS current
Average current
Surge (non-repetitive) current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Foward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=IFM=75A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.5
—
3.0
—
50
0.8
0.2
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
not Recommend
for New Design
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
—
VDSM
—
VD (DC)
—
IT (RMS)
IF (RMS)
IT (AV)
IF (AV)
ITSM
IFSM
I2tdi/dt
—
Item
Thyristor
Diode
PGM
—
PG (AV)
—
VFGM
—
IFGM
—
TjTstg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
dv/dt
—
VGT
—
VGD
—
VTM
VFM
IGT
—
Rth (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)GATE VOLTAGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
GATE CURRENT (mA) TIME (s)
Rth (c-f)
–3
10
–2
10
–1
10
0
10
0
10
1
10
1
10
0
10
1
10
4
10
2
10
3
10
–1
10
3
10
2
10
1
10
0
10
705030207532
0
100
500
200
300
400
101 100
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
50mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=
25°C
0.6
7
5
3
2
7
5
3
2
7
5
3
2
1.0 1.4 1.8 2.62.2
T
j
=125°C
753275327532
0.2
0.4
0.6
0.8
1.0
0
7532
0.3
0.5
0.7
0.9
0.1
not Recommend
for New Design
Feb.1999
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
AVERAGE POWER DISSIPATION (W)
RMS CURRENT (A)RMS CURRENT (A)
AVERAGE POWER DISSIPATION (W)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
θ
360°
00402010
50
30
10
53515 25
20
30
40
θ=30°
60°
270°
DC
180°
120°
90°
130
50
60
70
80
90
100
110
120
0402010 30 3515525
θ=30° 60° 90° DC270°
θ
360°
180°
120°
00802010
80
30
70
60
50
40
30
20
10
40 50 60 70
θ=180°
60°
90°
30°
θ
360°
θ
80 0802010
130
30
85
40
90
95
100
105
110
115
120
125
50 60 70
θ
360°
θ
θ=30°,60°,90°
180°
0025105 15 20
40
5
10
15
20
25
30
35
θ=30°
60°
120°
90°
180°
θ
360°
130
80 02025510
15
90
100
110
120
θ=30° 60° 90° 120° 180°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
RESISTIVE, INDUCTIVE LOAD
PER SINGLE MODULE
not Recommend
for New Design
Feb.1999
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
00804020
80
60
70
60
50
40
30
20
10
10 7030 50
θ=30°
60°
120°
90°
θ
360°
80 0804020
130
60
85
10 7030 50
90
95
100
105
110
115
120
125
90°θ=30° 60° 120°
θ
360°
00502010
80
30
70
60
50
40
30
20
10
40
θ=30°
60°
120°
90°
180°
θ
360°
θ
130
80 0502010 30 40
85
90
95
100
105
110
115
120
125 θ
360°
θ
θ=30° 60° 90° 180°120°
RESISTIVE, INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE, INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
not Recommend
for New Design
