AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 5.8A RDS(ON) < 25m RDS(ON) < 35m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current A,F Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 20 V ID 4.9 IDM 64 W 0.9 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State A 1.4 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 5.8 TA=70C TA=25C Power Dissipation Maximum 30 RJA RJL Typ 65 85 63 C Max 90 125 80 Units C/W C/W C/W www.aosmd.com Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V 1 TJ=55C 5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=5.8A TJ=125C VGS=4.5V, ID=4.8A gFS Forward Transconductance VDS=5V, ID=5.8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 100 nA 2.1 2.6 V 18.4 25 26.2 36 24.5 35 A 22 0.75 373 m m S 1 V 2.5 A 448 pF VGS=0V, VDS=15V, f=1MHz 67 VGS=0V, VDS=0V, f=1MHz 1.8 2.8 7.1 11 nC pF 41 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V VDS=30V, VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ VGS=10V, VDS=15V, ID=5.8A pF 3.3 nC 1.4 nC Qgs Gate Source Charge Qgd Gate Drain Charge 1.7 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time 2.4 ns 14.8 ns 2.5 ns VGS=10V, VDS=15V, RL=2.6, RGEN=3 tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5.8A, dI/dt=100A/s 10.5 Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/s 4.5 Body Diode Reverse Recovery Time nC 6.5 12.6 ns ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. Rev4 May.2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V VDS=5V 6V 50 VDS=5V 12 9 4.5V ID(A) ID (A) 40 30 125C 6 20 125C VGS=3.5V 3 10 0 25C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 4 373 67 41 VGS=10V 1.2 Id=5.8A Normalized On-Resistance 1.8 38 3.5 4.5 VGS(Volts) Figure 2: Transfer Characteristics 45 RDS(ON) (m ) 25C VGS=4.5V 31 24 17 VGS=10V 10 1.6 448 1.8 1.4 1.2 VGS=4.5V Id=4.8A 1 0.8 0.6 0 5 10 15 20 0 25 50 75 10.5 100 125 12.6 150 175 4.5 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 ID=5.8A 1.0E+00 1.0E-01 40 125C IS (A) RDS(ON) (m ) 50 30 125C 1.0E-02 25C 1.0E-03 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=5.8A 500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 30 10s TJ(Max)=150C TA=25C RDS(ON) limited 100s 1.0 1ms 10ms 0.1 TJ(Max)=150C TA=25C 20 10 0.1s DC 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Z JA Normalized Transient Thermal Resistance Power (W) ID (Amps) 10.0 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com