Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
65 90
85 125
R
θJL
63 80
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
°C/W
Maximum Junction-to-Ambient
A
Steady-State
Continuous Drain
Current
A,F
Maximum UnitsParameter 30
Gate-Source Voltage
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
5.8
4.9
W
Junction and Storage Temperature Range
A
P
D
°C
1.4
0.9
-55 to 150
T
A
=70°C
I
D
T
A
=25°C
T
A
=70°C
Power Dissipation T
A
=25°C
Pulsed Drain Current
B
64
Features
VDS (V) = 30V
ID= 5.8A (VGS = 10V)
RDS(ON) < 25mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)
AO3404A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3404A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to
allow a Kelvin connection to the source, which may
be used to bypass the source inductance.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1.5 2.1 2.6 V
I
D(ON)
64 A
18.4 25
T
J
=125°C 26.2 36
24.5 35 mΩ
g
FS
22 S
V
SD
0.75 1 V
I
S
2.5 A
C
iss
373 448 pF
C
oss
67 pF
C
rss
41 pF
R
g
1.8 2.8 Ω
Q
g
(10V) 7.1 11 nC
Q
g
(4.5V) 3.3 nC
Q
gs
1.4 nC
Q
gd
1.7 nC
t
D(on)
4.5 6.5 ns
t
r
2.4 ns
t
D(off)
14.8 ns
t
f
2.5 ns
t
rr
10.5 12.6 ns
Q
rr
4.5 nC
Rev4 May.2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=5.8A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5.8A
Reverse Transfer Capacitance
I
F
=5.8A, dI/dt=100A/µs
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20VGate-Body leakage current
Total Gate Charge
Gate Source Charge
V
GS
=4.5V, I
D
=4.8A
I
S
=1A,V
GS
=0V
VDS=5V, ID=5.8A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=30V, V
GS
=0V
Zero Gate Voltage Drain Current
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=2.6Ω,
R
GEN
=3Ω
Turn-Off Fall Time
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=5.8A
Total Gate Charge
Gate Drain Charge
mΩ
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
373 448
67
41
1.2 1.8
10.5 12.6
4.5
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
17
24
31
38
45
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
Id=5.8A
VGS=4.5V
Id=4.8A
10
20
30
40
50
60
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS
=5V
VGS=4.5V
V
=10V
ID=5.8A
25°C
125
°
C
0
10
20
30
40
50
60
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=3.5V
4.5V
6V
10V
0
3
6
9
12
15
1.5 2 2.5 3 3.5 4 4.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
VDS=5V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25
°
C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
C
rss
VDS=15V
ID=5.8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com