Silicon PIN Photodiode, RoHS Compliant
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81529
406 Rev. 1.6, 08-Sep-08
BPW82
Vishay Semiconductors
DESCRIPTION
BPW82 is a PIN photodiode with high speed and high radiant
sensitivity in a black, side view plastic package with daylight
blocking filter. Filter bandwidth is matched with 870 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 4 x 6.8
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8480
PRODUCT SUMMARY
COMPONENT Ira (µA) ϕ (deg) λ0.5 (nm)
BPW82 45 ± 65 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW82 Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
Document Number: 81529 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.6, 08-Sep-08 407
BPW82
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 870 nm Vo350 mV
Short circuit current Ee = 1 mW/cm2, λ = 870 nm Ik38 µA
Reverse light current Ee = 1 mW/cm2, λ = 870 n m,
VR = 5 V Ira 43 45 µA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp950 nm
Range of spectral bandwidth λ0.5 790 to 1050 nm
Noise equivalent power VR = 10 V, λ = 870 nm NEP 4 x 10-14 W/√Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81529
408 Rev. 1.6, 08-Sep-08
BPW82
Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm²)
10
94 8414
V
R
= 5 V
= 950 nm
λ
0.1 1 10
1
10
100
VR- Reverse Voltage (V)
100
94 8415
I - Reverse Light Current (µA)
ra
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
94 8426
S(λ)rel - Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Document Number: 81529 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.6, 08-Sep-08 409
BPW82
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Sensitive area
(2.8)
(2.05)
0.4
0.45
6.8
8.9
4
- 0.05
+ 0.1
- 0.05
+ 0.01
± 0.3
± 0.3
5± 0.2
± 0.2
2.3 ± 0.2
- 0.8
Issue:1; 01.07.96
Drawing-No.: 6.544-5108.01-4 specifications
according to DIN
technical drawings
Area not plane
C
A
Chip position
19.8
< 0.5
2.5 nom.
< 0.65
96 12195
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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