SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF30100CT
Technical Data
Data Sheet M2636, Rev.A
MBRF30100CT SCHOTTKY RECTIFIER
Applications:
•
••
• Switchi ng power supply •
••
• Converters •
••
• Free - Wheel ing diode s •
••
• Reverse battery protection
Features:
• 150 °
°°
°C TJ operation
• Cent e r tap conf iguration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
ITO-220AB
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF30100CT
Technical Data
Data Sheet M2636, Rev. A
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 100 V
Max. Average Forward IF(AV) 50% duty cycle @TC = 133°C,
rectangular wave form 30 A
Peak Repetitive Forward
Current(per leg) IFRM Rated VR square wave ,
20KHz TC = 133°C 20 A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg)
IFSM Surge applied at rated load
conditions halfwave, single
phase,60Hz
150
A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg) * VF1 @ 15 A, Pulse, TJ = 25 °C
@ 30 A, Pulse, TJ = 25 °C 0.85
1.05 V
V
F2 @ 15 A, Pul se, TJ = 125 °C
@ 30 A, Pulse, TJ = 125 °C 0.70
0.85 V
Max. Reverse Current (per
leg) * IR1 @VR = rated VR
TJ = 25 °C 1.0 mA
I
R2 @VR = rated VR
TJ = 125 °C 6.0 mA
Max. Junction Capacitance
(per leg) CT @VR = 5V, TC = 25 °C
fSIG = 1MHz 400 pF
Typica l Series Inductance
(per leg) LS Measured lead to lead 5 mm from
package body 8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
Clip mounting, the epoxy body
away from the heatsink edge by
more than 0.110" along the lead
direction.
4500
Clip mounting, the epoxy body is
inside the heatsink. 3500
RSM Isolation Vol ta ge
(t = 1.0 second, R. H. < =30%,
TA = 25 °C)
VISO
Screw mounting, the epoxy body
is inside the heatsi nk. 1500
V
* Pulse Width < 300µs, Duty Cycle <2%
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF30100CT
Technical Data
Data Sheet M2636, Rev. A
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC DC operation 3.0 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA DC operation 50 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS Mounting surface,
smooth and greased 0.50 °C/W
Approximate Weight wt - 2.0 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style ITO-220AB
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF30100CT
Technical Data
Data Sheet M2636, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet (s) .
2- In cases where extremely high reliabil it y is required (such as use in nuclear power control, aerospac e and aviation, tr aff ic equi pm ent ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users ’ f ail-s a fe precaut ions or other arrangem ent .
3- In no event shall Sensitr on Sem i conduc t or be liable for any damages that may result from an acc i dent or any other cause during
operation of the user’s unit s acc ordi ng to the datas heet( s ). Sens i tr on Semi c onduc t or ass um es no respons i bil i ty for any intell ectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolute m aximum rat i ng.
5- No license is granted by the datasheet( s) under any patents or other rights of any thir d party or Sensitron Semic onduc tor .
6- The datasheet(s) m ay not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permiss ion of
Sensit ron S em i conduc tor .
7- The products (tec hnolo gies) descr ibed in the datas heet( s) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peace and safet y nor are they to be applied to that purpose by their direct purc hasers or any third
party. When exporting these products (t echnologi es ), the nec ess ary procedures are to be taken in accor dance with related laws and
regulations.
