ZXTN2011G Green 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V IC = 6A Continuous Collector Current ICM = 10A Peak Pulse Current Low Saturation Voltage VCE(sat) < 65mV max @ 1A Moisture Sensitivity: Level 1 per J-STD-020 RSAT = 36m @ Ic =6A for Low Equivalent On-Resistance Terminals: Finish - Matte Tin Plated Leads. hFE Specified up to 10A for High Gain Hold Up Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Solderable per MIL-STD-202, Method 208 Applications Line Switching Motor Driving (including DC fans) High Side Switches Subscriber Line Interface Cards (SLIC) SOT223 Device Schematic Top View Pin-Out Top View Ordering Information (Note 4) Part Number ZXTN2011GTA Notes: Marking ZXTN2011 Reel Size (inches) 7 Tape Width (mm) 12 Quantity Per Reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXTN 2011 ZXTN2011G Document number: DS33662 Rev. 3 - 2 YWW SOT223 ZXTN 2011 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com January 2016 (c) Diodes Incorporated ZXTN2011G Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 200 100 7 6 10 Unit V V V A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) PD (Note 6) (Note 5) (Note 6) (Note 7) RJA RJA RJL TJ, TSTG Value 3.0 24 1.6 12.8 42 78 8.8 -55 to +150 Unit W mW/C C/W C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN2011G Document number: DS33662 Rev. 3 - 2 2 of 7 www.diodes.com January 2016 (c) Diodes Incorporated ZXTN2011G 10 VCE(sat) Limit 1 DC 1s 100ms 10ms 100m Single Pulse. T amb=25C 10m 100m 1ms 100s See note (5) 1 10 100 Max Power Dissipation (W) IC Collector Current (A) Thermal Characteristics and Derating Information 3.0 2.5 See note (5) 2.0 1.5 1.0 See note (6) 0.5 0.0 0 20 VCE Collector-Emitter Voltage (V) D=0.5 20 Single Pulse 10 D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (C/W) 30 0 100 Single Pulse. T amb=25C See note (5) 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS33662 Rev. 3 - 2 100 120 140 160 100 Pulse Width (s) ZXTN2011G 80 Derating Curve See note (5) D=0.2 60 Temperature (C) Safe Operating Area 40 40 3 of 7 www.diodes.com Pulse Power Dissipation January 2016 (c) Diodes Incorporated ZXTN2011G Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Symbol BVCBO BVCER BVCEO BVEBO Min 200 200 100 7 -- -- Typ 235 235 115 8.1 -- -- Max -- -- -- -- 50 0.5 Unit V V V V nA A -- -- -- -- -- -- -- -- -- -- -- -- -- 100 0.5 10 nA A nA 21 50 95 190 35 65 125 220 mV 1.02 0.92 1.12 1 V V hFE 100 100 30 10 230 200 60 20 -- 300 -- -- fT -- 130 -- MHz Cobo tON -- -- 26 41 -- -- pF tOFF -- 1,010 -- ICBO ICER R1k IEBO Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-on Voltage (Note 9) VBE(sat) VBE(on) DC Current Gain (Note 9) Transition Frequency Output Capacitance (Note 9) Switching Times Note: ns Test Condition IC = 100A IC = 1A, RB 1k IC = 10mA IE = 100A VCB = 150V VCB = 150V, TA = +100C VCB = 150V VCB = 150V, TA = +100C VEB = 6V IC = 0.1A, IB = 5mA IC = 1A, IB = 100mA IC = 2A, IB = 100mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA IC = 5A, VCE = 2V IC = 10mA, VCE = 2V IC = 2A, VCE = 2V IC = 5A, VCE = 2V IC = 10A, VCE = 2V VCE = 10V, IC = 100mA, f = 50MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTN2011G Document number: DS33662 Rev. 3 - 2 4 of 7 www.diodes.com January 2016 (c) Diodes Incorporated ZXTN2011G Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.6 Tamb=25C IC/IB=10 0.5 100m VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 IC/IB=20 IC/IB=10 0.4 100C 0.3 25C 0.2 0.1 -55C 10m 1m 10m 100m 1 0.0 1m 10 10m 100m 1 10 IC Collector Current (A) IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 250 200 1.0 0.8 150 25C 0.6 100 0.4 -55C 50 0.2 0.0 1m IC/IB=10 1.2 VBE(SAT) (V) 100C Typical Gain (hFE) 1.2 Normalised Gain 1.4 VCE=2V 1.0 0.8 -55C 25C 0.6 100C 0.4 0 10m 100m 1 10 1m IC Collector Current (A) 100m 1 10 IC Collector Current (A) hFE v IC 1.4 10m VBE(SAT) v IC VCE=2V VBE(ON) (V) 1.2 1.0 0.8 -55C 25C 0.6 0.4 100C 1m 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTN2011G Document number: DS33662 Rev. 3 - 2 5 of 7 www.diodes.com January 2016 (c) Diodes Incorporated ZXTN2011G Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b A A1 0 -1 0 e SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 7 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 C2 8.00 Y1 C1 Y2 Y X C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. ZXTN2011G Document number: DS33662 Rev. 3 - 2 6 of 7 www.diodes.com January 2016 (c) Diodes Incorporated ZXTN2011G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2016, Diodes Incorporated www.diodes.com ZXTN2011G Document number: DS33662 Rev. 3 - 2 7 of 7 www.diodes.com January 2016 (c) Diodes Incorporated