ZXTN2011GTA - DIODES INC - Datasheet.Directory

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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ZXTN2011G

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

Features

 BVCEO > 100V

 IC = 6A Continuous Collector Current

 ICM = 10A Peak Pulse Current

 Low Saturation Voltage VCE(sat) < 65mV max @ 1A

 RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance

 hFE Specified up to 10A for High Gain Hold Up

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads.

Solderable per MIL-STD-202, Method 208

 Weight: 0.112 grams (Approximate)

Applications

 Line Switching

 Motor Driving (including DC fans)

 High Side Switches

 Subscriber Line Interface Cards (SLIC)

Ordering Information (Note 4)

Part Number

Marking

Reel Size (inches)

Tape Width (mm)

Quantity Per Reel

ZXTN2011GTA

ZXTN2011

7

12

1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

Top View

Pin-Out Top View

Device Schematic

SOT223

Green

ZXTN 2011 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

YWW

ZXTN

2011

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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January 2016

ZXTN2011G

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

200

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

7

V

Continuous Collector Current

IC

6

A

Peak Pulse Current

ICM

10

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

PD

3.0

24

W

mW/°C

(Note 6)

1.6

12.8

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

42

°C/W

(Note 6)

RJA

78

Thermal Resistance, Junction to Lead

(Note 7)

RJL

8.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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ZXTN2011G

Thermal Characteristics and Derating Information

100m 110 100

10m

100m

1

10

Single Pulse. Tamb=25°C

See note (5)

VCE(sat)

Limit

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

IC Collector Current (A)

VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

See note (6)

See note (5)

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40 See note (5)

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s) 100µ 1m 10m 100m 110 100 1k

1

10

100 Single Pulse. Tamb=25°C

See note (5)

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

200

235

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

200

235

—

V

IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

100

115

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7

8.1

—

V

IE = 100µA

Collector Cutoff Current

ICBO

—

—

—

—

50

0.5

nA

µA

VCB = 150V

VCB = 150V, TA = +100°C

Collector Cutoff Current

ICER

R≤1kΩ

—

—

—

—

100

0.5

nA

µA

VCB = 150V

VCB = 150V, TA = +100°C

Emitter Cutoff Current

IEBO

—

10

nA

VEB = 6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

—

—

21

50

95

190

35

65

125

220

mV

IC = 0.1A, IB = 5mA

IC = 1A, IB = 100mA

IC = 2A, IB = 100mA

IC = 5A, IB = 500mA

Base-Emitter Saturation Voltage (Note 9)

VBE(sat)

—

1.02

1.12

V

IC = 5A, IB = 500mA

Base-Emitter Turn-on Voltage (Note 9)

VBE(on)

—

0.92

1

V

IC = 5A, VCE = 2V

DC Current Gain (Note 9)

hFE

100

30

10

230

200

60

20

—

300

—

IC = 10mA, VCE = 2V

IC = 2A, VCE = 2V

IC = 5A, VCE = 2V

IC = 10A, VCE = 2V

Transition Frequency

fT

—

130

—

MHz

VCE = 10V, IC = 100mA,

f = 50MHz

Output Capacitance (Note 9)

Cobo

—

26

—

pF

VCB = 10V, f = 1MHz

Switching Times

tON

—

41

—

ns

VCC = 10V, IC = 1A,

IB1 = -IB2 = 100mA

tOFF

—

1,010

—

Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 110

10m

100m

1

1m 10m 100m 110

0.0

0.1

0.2

0.3

0.4

0.5

0.6

1m 10m 100m 110

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 110

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 110

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

VCE(SAT) v IC

Tamb=25°C

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Collector Current (A)

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

VCE(SAT) (V)

IC Collector Current (A)

hFE v IC

VCE=2V

-55°C

25°C

100°C

Normalised Gain

IC Collector Current (A)

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

VBE(SAT) (V)

IC Collector Current (A)

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V)

IC Collector Current (A)

Typical Gain (hFE)

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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ZXTN2011G

Package Outline Dimensions

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device

terminals and PCB tracking.

SOT223

Dim

Min

Max

Typ

A

1.55

1.65

1.60

A1

0.010

0.15

0.05

b

0.60

0.80

0.70

b1

2.90

3.10

3.00

C

0.20

0.30

0.25

D

6.45

6.55

6.50

E

3.45

3.55

3.50

E1

6.90

7.10

7.00

e

-

4.60

e1

-

2.30

L

0.85

1.05

0.95

Q

0.84

0.94

0.89

All Dimensions in mm

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

C2

8.00

A1

A

7°

D

b

e

e1

b1

C

E1

L

0°-10°

Q

E

0.25

Seating

Plane

Gauge

Plane

X1

Y1

Y

XC

C1 Y2

ZXTN2011G

Document number: DS33662 Rev. 3 - 2

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ZXTN2011G

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final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

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labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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