HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE(sat) tfi Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 60 A IC90 TC = 90C 32 A ICM TC = 25C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 33 W Clamped inductive load, L = 100 mH PC TC = 25C ICM = 64 @ 0.8 VCES A 200 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-247 AD 6 g = = = = 600 V 60 A 2.5 V 80 ns TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features * International standard package JEDEC TO-247 AD * High current handling capability * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 * VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 600 2.5 TJ = 25C TJ = 125C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 5 V V 200 1 mA mA 100 nA 2.5 V * * * * * * PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages * High power density * Very fast switching speeds for high frequency applications 95566B (7/00) 1-2 http://store.iiic.cc/ IXGH32N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % C ies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 15 20 S 2500 pF 230 pF 70 pF 125 150 nC 23 35 nC 50 75 nC td(on) Inductive load, TJ = 25C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W 30 ns td(off) TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. 100 200 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 80 150 ns 0.8 1.6 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH 35 ns Eon VCE = 0.8 VCES, RG = Roff = 4.7 W 0.3 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 120 ns 120 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 1.4 mJ N 1.5 2.49 0.087 0.102 tfi tfi Eoff 0.62 K/W RthJC RthCK 0.25 K/W IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data sheet. (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 http://store.iiic.cc/ 2-2