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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C60A
IC90 TC= 90°C32A
ICM TC= 25°C, 1 ms 1 2 0 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 33 W ICM = 64 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 6 0 0 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.5 V
95566B (7/00)
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD
HiPerFASTTM IGBT IXGH32N60B VCES = 600 V
IC25 = 60 A
VCE(sat) = 2.5 V
tfi = 80 ns
Features
• International standard package
JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• PFC circuits
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 1 5 2 0 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 2500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 2 30 p F
Cres 70 pF
Qg125 150 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC
Qgc 50 75 nC
td(on) 25 ns
tri 30 ns
td(off) 100 200 ns
tfi 80 150 ns
Eoff 0.8 1.6 mJ
td(on) 25 ns
tri 35 ns
Eon 0.3 mJ
td(off) 120 ns
tfi 120 ns
Eoff 1.4 mJ
RthJC 0.62 K/W
RthCK 0.25 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
IXGH32N60B
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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