MIXERS - SUB-HARMONIC - CHIP
3
3 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC338
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
v03.1007
General Description
Features
Functional Diagram
The HMC338 chip is a general purpose sub-harmoni-
cally pumped (x2) MMIC mixer with an integrated LO
ampli er which can be used as an upconverter or
downconverter in the 26 to 33 GHz frequency range.
The chip utilizes a GaAs PHEMT technology that
results in a small overall chip area of 1.28mm2. The
2LO to RF isolation is excellent eliminating the need
for additional ltering. The LO ampli er is a single
bias (+3V to +4V) two stage design with only -5 dBm
nominal drive requirement. All data is measured with
the chip in a 50 ohm test xture connected via 0.076
mm (3 mil) ribbon bonds of minimal length <0.31 mm
(<12 mils).
Integrated LO Ampli er: -5 dBm Input
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 33 dB
Die Size: 1.32 x 0.97 x 0.1 mm
Electrical Speci cations, TA = +25° C, As a Function of Vdd
Typical Applications
The HMC338 is ideal for:
• General Purpose Applications
• 26 and 33 GHz Microwave Radios
• Up and Down Converter for
Point-to-Point Radios
• Satellite Communication Systems
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
Parameter
IF = 1 GHz
LO = -5 dBm & Vdd = +4V
IF = 1 GHz
LO = -5 dBm & Vdd = +3V Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range, RF 26 - 33 27 - 32 GHz
Frequency Range, LO 13 - 16.5 13.5 - 16 GHz
Frequency Range, IF DC - 2.5 DC - 2.5 GHz
Conversion Loss 9 12 9 12 dB
Noise Figure (SSB) 9 12 9 12 dB
2LO to RF Isolation 18 33 12 30 dB
2LO to IF Isolation 30 40 25 40 dB
IP3 (Input) 5 11 3 9 dBm
1 dB Compression (Input) -5 2 -5 0 dBm
Supply Current (Idd) 28 50 25 50 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 43
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Temperature @ LO = -5 dBm, Vdd= +4V
Conversion Gain vs.
Temperature @ LO = -5 dBm, Vdd= +3V
Conversion Gain
vs. LO Drive @ Vdd = +4V
Conversion Gain
vs. LO Drive @ Vdd = +3V
Isolation @ LO = -5 dBm, Vdd = +4V Isolation @ LO = -5 dBm, Vdd = +3V
-20
-16
-12
-8
-4
0
25 26 27 28 29 30 31 32 33 34 35 36 37
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
25 26 27 28 29 30 31 32 33 34 35 36 37
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
25 26 27 28 29 30 31 32 33 34 35 36 37
- 7 dBm
- 5 dBm
- 3 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
25 26 27 28 29 30 31 32 33 34 35 36 37
- 7 dBm
- 5 dBm
- 3 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
10
24 25 26 27 28 29 30 31 32 33 34 35 36 37
RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
10
24 25 26 27 28 29 30 31 32 33 34 35 36 37
RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input IP3 vs. Temperature
@ LO = -5 dBm, Vdd = +4V*
Input IP3 vs. Temperature
@ LO = -5 dBm, Vdd = +3V*
Input IP2 vs. LO Drive @ Vdd = +4V* Input IP2 vs. LO Drive @ Vdd = +3V*
Input IP3 vs. LO Drive @ Vdd = +4V* Input IP3 vs. LO Drive @ Vdd = +3V*
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
0
4
8
12
16
20
27 28 29 30 31 32 33
-7 dBm
-5 dBm
-3 dBm
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
27 28 29 30 31 32 33
-7 dBm
-5 dBm
-3 dBm
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
27 28 29 30 31 32 33
+ 25 C
+ 85 C
- 55 C
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
27 28 29 30 31 32 33
+ 25 C
+ 85 C
- 55 C
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
27 28 29 30 31 32 33
-7 dBm
-5 dBm
-3 dBm
IP2 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
27 28 29 30 31 32 33
-7 dBm
-5 dBm
-3 dBm
IP2 (dBm)
FREQUENCY (GHz)
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 45
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input P1dB vs. Temperature
@ LO = -5 dBm, Vdd = +4V
Input P1dB vs. Temperature
@ LO = -5 dBm, Vdd = +3V
Input IP2 vs. Temperature
@ LO = -5 dBm, Vdd = +4V*
Input IP2 vs. Temperature
@ LO = -5 dBm, Vdd = +3V*
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
RF & LO Return Loss
@ LO = -5 dBm, Vdd = +4V
IF Return Loss
@ LO = -5 dBm, Vdd = +4V
0
10
20
30
40
50
60
70
27 28 29 30 31 32 33
+ 25 C
+ 85 C
- 55 C
IP2 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
27 28 29 30 31 32 33
+ 25 C
+ 85 C
- 55 C
IP2 (dBm)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
26 27 28 29 30 31 32
+ 25 C
+ 85 C
- 55 C
P1dB (dBm)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
26 27 28 29 30 31 32
+ 25 C
+ 85 C
- 55 C
P1dB (dBm)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
LO
RF
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
IF
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MxN Spurious @ IF Port, Vdd = +4V
Upconverter Performance
Conversion Gain, LO = -5 dBm, Vdd = +4V
IF Bandwidth @ LO = -5 dBm
MxN Spurious @ RF Port, Vdd = +4V
nLO
mRF ±5 ±4 ±3 ±2 ±1 0
-3
-2 52
-1 54 35 53
0428-8
1X5113
2585142
388
RF = 31 GHz @ -10 dBm
LO = 15 GHz @ -5 dBm
All values in dBc below IF power level.
Measured as downconverter
nLO
mIF±5±4±3±2±1 0
-3 49
-2 33 55 45
-1 41 X 43
0-519-16
144X4015
233543663
34769
IF = 1 GHz @ -10 dBm
LO = 15 GHz @ -5 dBm
All values in dBc below RF power level.
Measured as upconverter
-20
-16
-12
-8
-4
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Vdd= +3V
Vdd= +4V
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
25 26 27 28 29 30 31 32 33 34 35 36 37
Vdd= +3V
Vdd= +4V
CONVERSION GAIN (dB)
FREQUENCY (GHz)
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 47
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Outline Drawing
RF / IF Input (Vdd = +5V) +13 dBm
LO Drive (Vdd = +5V) +13 dBm
Vdd +5.5 Vdc
Continuous Pdiss (Ta = 85 °C)
(derate 2.64 mW/°C above 85 °C) 238 mW
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Pad Number Function Description Interface Schematic
1Vdd
Power supply for the LO Ampli er. An external RF bypass
capacitor of 100 - 330 pF is required. A MIM border capacitor
is recommended. The bond length to the capacitor should be
as short as possible. The ground side of the capacitor should
be connected to the housing ground.
2RF This pad is AC coupled and matched
to 50 Ohm.
3IF
This pad is DC coupled and should be DC blocked externally
using a series capacitor whose value has been chosen to pass
the necessary IF frequency range. Any applied DC voltage to
this pin will result in die non-function and possible die failure.
4LO This pad is AC coupled and matched
to 50 Ohm.
Pad Descriptions
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 49
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC338
v03.1007 GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
