© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1Publication Order Number:
MMBT4124LT1/D
MMBT4124LT1G
General Purpose Transistor
NPN Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base Voltage VCBO 30 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8
W
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4
W
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
3
ZC M G
G
COLLECTOR
3
1
BASE
2
EMITTER
1
2
Device Package Shipping†
ORDERING INFORMATION
ZC = Device Code
M = Date Code*
G= Pb−Free Package
http://onsemi.com
MMBT4124LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT4124LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IE = 0)
V(BR)CEO 25 −Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO 30 −Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO 5.0 −Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO −50 nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO −50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE 120
60
360
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) −0.3 Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat) −0.95 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT300 −MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo −8.0 pF
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb −4.0 pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz)
hfe 120 480 −
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
|hfe|
3.0
120
−
480
−
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
NF −5.0 dB
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME (ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
MMBT4124LT1G
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3
Figure 3. Frequency Variations
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 4. Source Resistance
RS, SOURCE RESISTANCE (k)
0
NF, NOISE FIGURE (dB)
12 4 1020400.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 400.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1 kHz IC = 1 mA
IC = 0.5 mA
IC = 50 A
IC = 100 A
SOURCE RESISTANCE = 200
IC = 1 mA
SOURCE RESISTANCE = 200
IC = 0.5 mA
SOURCE RESISTANCE = 500
IC = 100 A
SOURCE RESISTANCE = 1 k
IC = 50 A
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
100.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
hie
0.1 0.2 1.0 2.0 5.0 100.5
0.1 0.2 1.0 2.0 5.0 10
0.5
2
1
0.1 0.2 1.0 2.0 5.0 10
0.5
-4
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
hfe, CURRENT GAIN
, INPUT IMPEDANCE (k )Ω
MMBT4124LT1G
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4
STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 700.2 0.3
0.1
1001.00.7 20030205.0 7.0
FE
VCE = 1 V
TJ = +125°C
+25°C
-55°C
Figure 10. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160 18020 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
+25°C to +125°C
-55°C to +25°C
+25°C to +125°C
-55°C to +25°C
VC for VCE(sat)
VB for VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MMBT4124LT1G
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MMBT4124LT1/D
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