TO-220 Plastic-Encapsulated Transistors
TIP42A/42B/42C TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: -6 A
Collector-base voltage
V(BR)CBO: TIP42A : -60 V
TIP42B: -80 V
TIP42C: -100 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage 42A
42B
42C V(BR)CBO Ic= -1mA, IE=0 -60
-80
-100 V
Collector-emitter breakdown voltage 42A
42B
42C V(BR)CEO Ic= -30mA, IB=0 -60
-80
-100 V
E mitter-b ase break dow n vol t age V(BR)EBO I
E= -1mA,IC=0 -5 V
Collector cut-off current 42A
42B
42C
ICBO VCB=- 60V, IE=0
VCB=- 80V, IE=0
VCB=-100V, IE=0 -0.4 mA
Collector cut-off current
42A
42B
42C
ICEO
VCE= -30V, IB= 0
VCE= -30V, IB= 0
VCE= -60V, IB= 0 -0.7 mA
Emi tter cut -o ff curr en t IEBO V
EB=-5 V, I C=0 -1 mA
hFE(1) V
CE= -4V, IC= -0.3A 30
DC current gain hFE(2) V
CE=- 4V, IC= -3A 15 75
Collector-emitter saturat ion voltage VCE(sat) I
C=-6A, IB=-0.6A -1.5 V
Base-emitter voltage VBE(on V
CE= -4V, IC=-6A -2 V
Transition fre quency fT VCE=-10V , IC=-0.5A
f =1MHz 3 MHZ
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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