Switching and General Purpose Transistors JAN 2N2708 (siLicon) ie Soma NF=7.5 dB ) NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications. CASE 20 (10-72) Active Elements Isolated From Case MAXIMUM RATINGS (1, = 25 = 3C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage Vero 20 Vde Collector-Base Voltage Vos 35 Vde Emitter-Base Voltage Ves 3.0 Vde Collector Current In 50 mAdc Total Device Dissipation @T, = 25C Py 0.2 Watt Derate above 25C 1.14 mWw/C Total Device Dissipation @T, = 25C Py 0.3 Watt Derate above 25C 1.72 mWw/C Operating & Storage Junction T., T -65 to +200 C J stg Temperature Range Lead Temperature (Not less than 1/16" from Seating Surface, Ty, +230 C No Time Limit) 8-155 Switching and General Purpose Transistors JAN 2N2708 (continued) TABLE Il GROUP B INSPECTION 1, = 25C = 3C unless otherwise noted) MIL-STD-750 ~_ Limits J Examination or Test Method Symbol | Min Max Unit LTPD SUBGROUP 1 Physical Dimensions 2066 - - - - 20 SUBGROUP 2 Soldering Heat, 1 cycle 2031 - - - - ) Temperature Cycling 1051 Condition C - - - - Thermal Shock (glass strain) 1056 Condition A - - - - Moisture Resistance, (No initial conditioning) 1021 - - - - End Point Tests: (Note 4) 10 Collector Cutoff Current 3036 lopo nAdc op = 15 Vde, lL = 0) Condition D - 20 Forward-Current Transfer Ratio 3076 hee - Vog = 2.0 Vde, I, = 2.0 mAdc) 30 - J SUBGROUP 3 Shock 2016 } (1500 G, 5 blows of approx. 0.5 ms each in non-operating orientations X1, Y1, Y2, Z1, total = 20 blows) - - - - Vibration, variable frequency 2056 - - - - Vibration Fatigue, 20G 2046 - - - - 10 non-operating Constant Acceleration (centrifuge) 2006 Orientations X1, Y1, Y2, 21 20,000 G - - - - End Point Tests: (Note 4) Same as for Subgroup 2 SUBGROUP 4 Lead Fatigue 2036 Condition E End Point Tests: (Note 4) - 1 atm Seal - ~ 5x10 ec/s 15 Per Method 112, MIL-STD-202, Condition C Procedure Ifa Test Cond. A for Gross Leaks SUBGROUP 5 Salt atmosphere 1041 - ~ - - There shall be no evidence of flaking, pitting, or other visible signs of corrosion on sample units after test 20 subjection. End Point Tests: (Note 4) Same as for Subgroup 2 SUBGROUP 6 High-Temperature Life 1031 - - - - Tete = +200C min non-operating End Point Tests: (Note 4) Collector Cutoff Current 3036 lopo nAdc d= 15 (op = 15 Vde, 1, = 0) Condition D . 50 Forward Current Transfer Ratio 3076 hep - Vor = 2.0 Vde, ln = 2.0 mAdc) 22.5 - SUBGROUP 7 Steady-State Operation Life 1026 - - (lg = 20 mAdc, P_, = 200 mw) - - T Az15 End Point Tests: (Note 4) Same as for Subgroup 6 Note 4. End-point test measurements shall be made within 4 hours. 8-157 Switching and General Purpose Transistors JAN 2N2708 (continued) TABLE Il - GROUP C INSPECTION (Ta = 25C = 3 unless otherwise noted) . MIL-STD-750 Limits Examination or Test Method Symbol Min Max Unit LTPD SUBGROUP | Barometric pressure, reduced 1001 - - (altitude operation) Condition D Normal mounting 18 t=60s - - Collector-Base Cutoff Current 3036 loBo pAdc op = 35 Vdc, LL, = 0) Condition D - 1.0 (Note 4) Note 5. pressure specified. 1000 1000 K- This test to be performed and measurement made during subjection of the sample units to the reduced barometric 18 Cy C3 iF nN O Vou 4 18 1-8 C la 50 I so 2200$ = ff 1000 fit] Vee +Vee FIGURE 1 TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE Capacitance values in pF Li 24% turns #18 AWG wire, 34 1D by 14 Ig. 12 3 turns #22 AWG wire, % ID by %4 Ig. Neutralization Procedure: (A) Connect 200-MHz signal generator (with Z,,. = 50 ohms) to input terminats of arnptifier. (B) Connect 50-ohm RF voltmeter across output terminals of amplifier. (C) Apply Vee and Vee, and with signal generator adjusted for 1.0 mV output from amplifier, tune C,, Cz, and C3 for maximum output. (D) Interchange connections to signal generator and output indicator. (E) With sufficient signal applied to output terminals of amplifier, adjust Cy for minimum indication at input. (F) Repeat steps (A), (8), and (C) to determine if retuning is necessary. 8-158