APL502B2(G) APL502L(G) 500V 58A 0.090 B2 LINEAR MOSFET T-Ma x TM Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). TO-264 L * Higher FBSOA * Popular T-MAXTM or TO-264 Package * Higher Power Dissipation D G * RoHS Compliant S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APL502B2_L(G) UNIT 500 Volts Drain-Source Voltage 58 Continuous Drain Current @ TC = 25C IDM 1 Pulsed Drain Current VGS VGSM PD Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 730 Watts 5.84 W/C Linear Derating Factor TJ,TSTG Amps 232 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 58 (Repetitive and Non-Repetitive) EAR Volts Amps 50 1 mJ 3000 4 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 500 Volts ID(ON) On State Drain Current 58 Amps RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x RDS(ON) Max, VGS = 15V) 2 TYP MAX 0.09 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 250 Drain-Source On-State Resistance (VGS = 15V, 29A) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT Ohms A 100 nA 4 Volts 050-5896 Rev F 11-2013 Symbol APL502B2_L(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) tr td(off) tf MIN TYP MAX 7485 9000 VDS = 25V f = 1 MHz 1290 1810 617 930 VGS = 15V 13 26 VDD = 250V 27 54 ID = 29A @ 25C RG = 0.6 56 84 16 20 TYP MAX VGS = 0V Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case WT Package Weight MIN 1 3 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 4 .17 oz 5.9 g See MIL-STD-750 Method 3471 Starting Tj = +25C, L = 1.78mH, RG = 25, Peak IL = 58A 0.18 0.7 0.10 0.5 0.08 P DM Note: 0.06 0.3 0.04 t 0.1 0.02 0 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C SINGLE PULSE Transient Thermal Impedance RC Model 0.05 10 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION -4 TJ (C) TC (C) 11-2013 0.0602 050-5896 Rev F t1 t2 0.109 Dissipated Power (Watts) 0.0158 0.305 ZEXT ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.14 0.12 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL C/W 0.22 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT Typical Performance Curves VGS=10V, 15 V 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 60 40 TJ = +125C TJ = +25C 0 TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 40 30 20 10 7.5 V 7V 60 6.5 V 40 6V 20 5.5 V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.30 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE NORMALIZED TO V GS 1.20 = 10V @ 29A VGS=10V 1.10 1.00 0.90 0.80 0.70 VGS=20V 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I = 29A V 2.0 GS = 12V 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) D 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 11-2013 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) (NORMALIZED) 50 0 80 1.15 60 8V 050-5896 Rev F ID, DRAIN CURRENT (AMPERES) (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 VGS=10, 15V 0 0 20 APL502B2_L(G) 120 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 120 Rds(on) 13S 100S 1mS 10mS 1 100mS T = 125C J DC line T = 75C C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, FORWARD SAFE OPERATING AREA 10 10 IDM 100 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) IDM 100 0.1 APL502B2_L(G) 400 400 13S Rds(on) 100S 1mS T = 150 C J 1 10mS T = 25 C C Scaling for Different Case & Junction Temperatures: I =I D 0.1 D (TC = 25C) 100mS DC line *(T - T )/125 C J 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA 30,000 Ciss 5,000 Coss C, CAPACITANCE (pF) 10,000 1,000 Crss 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 050-5896 Rev F 11-2013 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source APL502B2_L(G) Disclaimer: 050-5896 Rev F 11-2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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