MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 1
February 2008
MMBT2369 / PN2369
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
Sourced from process 21.
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maxim um junction te mperature o f 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 200 mA
ICP **Collector Current (Pulse) 400 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
B
E
C
Mark: 1J
TO-92
1. Emitter 2. Base 3. Collector
1
MMBT2369 PN2369
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V
V(BR)CES Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 V
ICBO Collector Cutoff Current VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C0.4
30 μA
μA
On Characteristics
hFE DC Current Gain * IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V 40
20 120
VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA 0.25 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.7 0.85 V
Small Signal Characteristics
Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 5.0 pF
hfe Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz 5.0
Switching Characteristics
tsStorage Time IB1 = IB2 = IC = 10mA 13 ns
ton Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns
toff Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA 18 ns
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 3
Package Dimensions
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
Dimensions in Millimeters
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 4
Package Dimensions (Continued)
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58
+0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
MMBT2369 / PN2369 NPN Switching TransistorMMBT2369 / PN2369
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 5
Rev. I31
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