Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions * Adoption of FBET process. * High breakdown voltage. * Excellent linearity of hFE and small Cob. * Fast swtching speed. unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 8.5 4.7 14.0 6.0 3.0 0.5 0.6 0.5 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : MP ( ) : 2SA1208 Specifications 1.45 1.45 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)180 V Collector-to-Emitter Voltage VCEO VEBO (-)160 V (-)5 V IC (-)70 mA Collector Current (Pulse) ICP (-)140 mA Collector Dissipation 900 mW Junction Temperature PC Tj 150 C Storage Temperature Tstg -55 to +150 C Emitter-to-Base Voltage Collector Current Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(-)80V, IE=0 VEB=(-)4V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA Output Capacitance Cob VCB=(-)10V, f=1MHz (2.5)2.0 IC=(-)30mA, IB=(-)3mA 0.08 (-0.14) Collector-to-Emitter Saturation Voltage VCE(sat) 100* * : The 2SA1208/2SC2910 are classified by 10mA hFE are follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 max Unit (-)0.1 A (-)0.1 A 400* 150 MHz pF 0.3 (-0.4) V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4 2SA1208/2SC2910 Continued from preceding page. Parameter Symbol Turn-ON Time min typ max Unit ton See specified Test Circuit 0.1 s tf See specified Test Circuit 0.2 s tstg See specified Test Circuit 1.0 s Fall Time Storage Time Ratings Conditions Switching Time Test Circuit IN OUT IB1 3k IB2 2k 5k 50 1F 1F 20V --2V IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) IC -- VCE --60 IC -- VCE 60 2SA1208 Collector Current, IC - mA --0 --0 --0.15mA --0.1mA --20 mA 0.3 50 --0.2mA --40 --30 2SC2910 A m .25 Collector Current, IC - mA m .3 --50 A --0.05mA --10 A 0.25m 40 0.2mA A 0.15m 30 0.1mA 20 0.05mA 10 IB=0 0 0 --10 --20 --30 --40 --50 --60 0 --70 IB=0 0 10 Collector-to-Emitter Voltage, VCE - V ITR03005 75C 2 25C --25C 100 7 5 3 60 70 2SC2910 VCE=5V 3 75C 2 25C --25C 100 7 5 3 2 2 10 50 5 DC Current Gain, hFE DC Current Gain, hFE 5 40 hFE -- IC 7 2SA1208 VCE=--5V 3 30 Collector-to-Emitter Voltage, VCE - V ITR03006 hFE -- IC 7 20 5 7 --1.0 2 3 5 7 --10 2 Collector Current, IC - mA 3 5 7 --100 ITR03007 10 5 7 1.0 2 3 5 7 10 2 Collector Current, IC - mA 3 5 7 100 ITR03008 No.781-2/4 2SA1208/2SC2910 fT -- IC 2SA1208 VCE=--10V 3 2 100 5 3 2 5 7 2 --1.0 3 5 7 2 --10 3 7 --100 ITR03009 3 2 5 7 2 1.0 3 2SA1208 f=1MHz 3 2 1.0 7 2 10 3 5 7 100 ITR03010 2SC2910 f=1MHz 7 Output Capacitance, Cob - pF 5 5 Cob -- VCB 10 7 Output Capacitance, Cob - pF 7 5 Collector Current, IC - mA Cob -- VCB 10 5 3 2 1.0 7 7 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 7 --100 ITR03011 --1000 3 5 7 2 10 3 5 7 100 ITR03012 VCE(sat) -- IC 2 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2SA1208 IC / IB=10 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 2 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2 10 5 Collector Current, IC - mA 5 2SC2910 VCE=10V 3 100 7 10 fT -- IC 5 Gain-Bandwidth Product, fT - MHz Gain-Bandwidth Product, fT - MHz 5 2SC2910 IC / IB=10 1000 7 5 3 2 25C 75C --100 7 --25C 5 7 5 3 2 100 25C 7 75C 5 --25C 5 7 --1.0 2 3 5 7 --10 2 3 7 --100 ITR03013 Collector Current, IC - mA 2 3 --50 --40 5 7 2 10 3 5 7 100 ITR03014 IC -- VBE 2SC2910 VCE=5V 70 Collector Current, IC - mA --60 75C 25C --25C Collector Current, IC - mA --70 --20 7 1.0 80 2SA1208 VCE=--5V --30 5 Collector Current, IC - mA IC -- VBE --80 60 50 40 30 20 10 --10 0 3 5 75C 25C --25C 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V --1.2 ITR03015 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 ITR03016 No.781-3/4 2SA1208/2SC2910 VBE(sat) -- IC 7 3 2 25C --25C 7 75C 5 3 5 7 --1.0 2 3 5 7 --10 2 3 3 2 1.0 7 --100 ITR03017 75C 5 5 7 1.0 2 ASO 7 Collector Dissipation, PC - mW IC=70mA 7 5 DC 3 Op era 2 tio n 10 7 5 2SA1208 / 2SC2910 DC Single pulse (For PNP, minus sign is omitted.) 3 5 7 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE - V ITR03019 10 2 10 3 5 7 100 ITR03018 2SA1208 / 2SC2910 ICP=140mA s 1m ms 10 ms 0 10 Collector Current, IC - mA 5 PC -- Ta 1000 100 2 3 Collector Current, IC - mA 3 2 25C --25C 7 3 5 Collector Current, IC - mA 2SC2910 IC / IB=10 5 Base-to-Emitter Saturation Voltage, VBE (sat) - V Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 1.0 VBE(sat) -- IC 7 2SA1208 IC / IB=10 800 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR03020 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.781-4/4