Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
Product Features
• DC – 6000 MHz
• +16 dBm P1dB at 900 MHz
• +29 dBm OIP3 at 900 MHz
• 20 dB Gain at 900 MHz
• Single Voltage Supply
• Green SOT-86 SMT Package
• Internally matched to 50 Ω
Applications
• Mobile Infrastru cture
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless
Product Description
The AG503-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG503-86 typically provides
20 dB gain, +29 dBm OIP3, and +16 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85 °C & is housed in a SOT-86
(micro-X) industry-standard SMT lead-free/green/RoHS-
compliant package.
The AG503-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG503-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz DC 6000
Test Frequency MHz 900
Gain dB 20.2
Input Return Loss dB 20
Output Return Loss dB 20
Output IP3 (2) dBm +28.8
Output IP2 dBm +37
Output P1dB dBm +15.9
Noise Figure dB 2.9
Test Frequency MHz 1900
Gain dB 16.8 17.8 18.8
Output IP3 (2) dBm +27.8
Output P1dB dBm +14.6
Device Voltage V 5
Device Current mA 45
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Rbias = 22.1 Ω, 50 Ω Syst em.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +125 °C
DC Voltage +5.8 V
RF Input Power (continuous) +10 dBm
Junction Temperature +250° C
Operation of this device above any of these parameters may cause permanent damage
Typical Performance (1)
Parameter Units Typical
Frequency MHz 500 900 1900 2140
S21 dB 20.8 20.2 17.8 17.6
S11 dB -20 -20 -18 -18
S22 dB -21 -20 -15 -13
Output P1dB dBm +16.0 +15.9 +14.6 +14.3
Output IP3 dBm +28.9 +28.8 +27.8 +27.4
Noise Figure dB 2.9 2.9 3.1 3.1
Ordering Information
Part No. Description
AG503-86* InGaP HBT Gain Block
(lead-tin SOT-86 Pkg)
AG503-86G InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Pkg)
AG503-86PCB 700 – 2400 MHz Fully Assembled Eval. Board
* This package is being phased out in favor of the green package type which is backward compatible for
existing designs.
RF OutRF In
GND
GND
1
2
3
4
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
Typical Device RF Performance
Supply Bias = 6 V, Rbias = 22.1 Ω, Icc = 45 mA
Frequency MHz 100 500 900 1900 2140 2400 3500 5800
S21 dB 21.0 20.8 20.2 17.8 17.6 17.2 15.3 11.8
S11 dB -20 -20 -20 -18 -18 -18 -20 -20
S22 dB -18 -21 -20 -15 -13 -13 -16 -14
Output P1dB dBm +16.2 +16.0 +15.9 +14.6 +14.3 +14.0 +11.0
Output IP3 dBm +28.9 +28.9 +28.8 +27.8 +27.4 +27.0 +24.4
Noise Figure dB 2.9 2.9 2.9 3.1 3.1 3.2
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 Ω, Icc = 45 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
12
14
16
18
20
22
01234
Frequency (GHz)
Gain
(
dB
)
-40 C +25 C +85 C
Return Loss
-40
-30
-20
-10
0
0123456
Frequency (GH z)
S11, S22
(
dB
)
S11 S22
I-V Cu r v e
0
20
40
60
80
3.0 3.4 3.8 4.2 4.6 5.0 5.4
D evice V oltage (V)
Device Current
(
mA
)
O ptim al operating point
O utput IP3 vs. Frequency
15
20
25
30
35
00.511.522.533.5
Frequency (GHz)
OIP3
(
dBm
)
-4 0 C +25 C +85 C
Ou tp ut IP2 vs. Fre q ue n c y
25
30
35
40
45
0 200 400 600 800 1000
Frequency (MH z)
OIP2
(
dBm
)
-4 0 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (G Hz)
NF
(
dB
)
-4 0 C +25 C +85 C
P1dB vs. Frequency
0
5
10
15
20
00.511.522.533.54
Frequency (G Hz)
P1dB
(
dBm
)
-4 0 C +25 C +85 C
Output Power / Gain vs. Input Power
frequ ency = 900 MHz
10
12
14
16
18
20
-12 -8 -4 0 4 8
Inpu t Power (d Bm )
Gain
(
dB
)
0
4
8
12
16
20
Out
p
ut Pow er
(
dBm
)
Output Power
Gain
Output Power / Gain vs. Input Power
frequen c y = 2000 MHz
8
10
12
14
16
18
-12 -8 -4 0 4 8
Inpu t Power (d Bm )
Gain
(
dB
)
0
4
8
12
16
20
Out
p
ut Pow er
(
dBm
)
Output Power
Gain
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 44 Ω, Icc = 45 mA
Gain vs. Frequency
12
14
16
18
20
22
01234
Frequency (GHz)
Gain
(
dB
)
-40 C +25 C +85 C
O utput IP3 vs. Frequency
15
20
25
30
35
00.511.522.533.5
Frequency (GHz)
OIP3
(
dBm
)
-4 0 C +25 C +85 C
O utput IP 2 vs. Frequency
25
30
35
40
45
0 200 400 600 800 1000
Frequency (MH z)
OIP2
(
dBm
)
-4 0 C +25 C +85 C
P1dB vs. Frequency
0
5
10
15
20
00.511.522.533.54
Frequency (GH z)
P1dB
(
dBm
)
-4 0 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (G Hz)
NF
(
dB
)
-4 0 C +25 C +85 C
Application Circuit
Recommended Component Values
Reference Frequency (MHz)
Designator 50 500 900 1900 2200 2500 3500
L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH
C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF
1. The proper values for the components are dependent upon the inte nded frequency of operation.
2. The follow ing values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig. Value / Type Size
L1 39 nH wirewound inductor 0603
C1, C2 56 pF chip capacitor 0603
C3 0.018 μF chip capacitor 0603
C4 Do Not Place
R1 22.1 Ω 1% tolerance 0805
Recommended Bias Resistor Values
Supply
Voltage R1 value Size
6 V 22.2 ohms 0603
7 V 44.4 ohms 0805
8 V 67 ohms 1206
9 V 89 ohms 1210
10 V 111 ohms 1210
12 V 156 ohms 2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 µF
R1
Bias
Resisto
r
RF IN
C4
Bypass
Capacito
r
C2
Blocking
Ca
acito
Vcc
Icc = 45 m
A
A
G503-86
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
Typical Device Data
S-Parameters (Vdevice = +5.0 V, ICC = 45 mA, T = 25° C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -24.44 -177.67 21.67 177.30 -24.34 2.97 -18.52 -7.18
250 -24.44 164.30 21.57 167.09 -24.61 2.48 -18.86 -18.94
500 -21.37 149.15 21.36 154.27 -24.79 -1.41 -21.64 -48.63
750 -22.01 133.61 21.04 142.18 -24.91 -0.76 -20.64 -72.70
1000 -23.48 111.38 20.63 130.59 -24.93 -5.89 -19.50 -92.91
1250 -24.31 89.71 20.18 119.26 -24.48 -3.85 -17.89 -109.14
1500 -24.81 65.41 19.65 108.86 -24.13 -2.88 -16.59 -119.24
1750 -24.63 32.83 19.10 98.96 -24.32 -3.45 -15.53 -126.61
2000 -22.62 10.74 18.53 89.57 -23.97 -4.87 -14.85 -133.04
2250 -18.50 0.24 17.98 81.21 -23.53 -6.73 -13.12 -125.47
2500 -19.01 -8.16 17.60 74.79 -23.67 -9.19 -13.52 -132.23
2750 -19.23 -16.02 17.14 66.16 -23.22 -10.70 -14.01 -142.18
3000 -19.99 -20.82 16.72 58.14 -22.51 -11.38 -14.84 -155.04
3250 -22.01 -18.24 16.29 50.34 -22.50 -13.34 -15.91 -172.38
3500 -25.77 -3.66 15.88 42.45 -22.27 -15.84 -16.13 164.34
3750 -27.43 33.78 15.42 34.38 -21.77 -19.50 -15.28 139.30
4000 -24.77 70.07 14.98 26.44 -21.57 -22.70 -14.12 122.06
4250 -22.30 85.66 14.56 18.90 -20.99 -25.24 -12.66 109.74
4500 -20.80 92.93 14.09 11.59 -20.84 -28.83 -11.77 102.11
4750 -20.29 102.02 13.71 4.12 -20.73 -32.26 -11.62 97.84
5000 -21.16 110.99 13.39 -2.78 -20.46 -36.07 -11.55 96.81
5250 -23.80 134.38 13.03 -9.23 -20.21 -39.85 -12.15 98.05
5500 -24.99 172.16 12.69 -15.58 -19.97 -41.39 -12.91 101.46
5750 -21.56 -154.26 12.47 -22.34 -19.50 -44.82 -14.07 107.85
6000 -20.00 -137.16 12.19 -28.69 -19.34 -49.46 -14.74 111.53
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
AG503-86 (SOT-86 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85 °C
Thermal Resistance, Rth (1) 257 °C/W
Junction Temperature, Tjc (2) 143 °C
1. The thermal resistance is referenced from the hottest part
of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+5.03V, 45 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177 °C.
Product Marking
The component will be marked with an “H”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 0
Value: Passes at 150 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class II
Value: Passes at 250 V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 1
Standard: JEDEC Standard J-STD-020A
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25 mm
(.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
M TTF vs. GN D L ead Tem perature
1
10
100
1000
60 70 80 90 100 110 120
Ground Lead Temperature (°C)
MTTF
(
million hrs
)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 6 July 2005
AG503-86
InGaP HBT Gain Block Product Information
The Communications Ed
g
e TM
AG503-86G (Green / Lead-free Sot-86 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded
(maximum 245°C reflow temperature) soldering proces s es . The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85 °C
Thermal Resistance, Rth (1) 257 °C/W
Junction Temperature, Tjc (2) 143 °C
1. The thermal resistance is referenced from the hottest part
of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+5.03V, 45 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177 °C.
Product Marking
The component will be marked with an “S”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1C
Value: Passes at 1000 V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes at 1000 V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260° C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25 mm
(.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
M TTF vs. GN D L ead Tem perature
1
10
100
1000
60 70 80 90 100 110 120
Ground Lead Temperature (°C)
MTTF
(
million hrs
)