TISP4200H4BJR - Texas Instruments

HIGH HOLDING CURRENT 100 A 10/1000 OVERVOLTAGE PROTECTORS

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCTION DATA information is current as of

publication date. Products conform to specifications

per the terms of Texas Instruments standard warranty.

Production processing does not necessary include

testing of all parameters.

NOVEMBER 1997 - REVISED JULY 1999

Designed and manufactured by Power

Innovations, Bedford, UK. under private

label for Texas Instruments.

●8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating

●HighHoldingCurrent.........225mAmin.

●Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

●Rated for International Surge Wave Shapes

●LowDifferentialCapacitance...39pFmax.

DEVICE

VDRM

MINIMUM

V(BO)

MAXIMUM

‘4165 135 165

‘4180 145 180

‘4200 155 200

‘4265 200 265

‘4300 230 300

‘4350 275 350

WAVE SHAPE STANDARD ITSP

2/10 µs GR-1089-CORE 500

8/20 µs IEC 61000-4-5 300

10/160 µs FCC Part 68 250

10/700 µs ITU-T K20/21 200

10/560 µs FCC Part 68 160

10/1000 µs GR-1089-CORE 100

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by

a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A

single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication

equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can

be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially

clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to

crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the

overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup

as the diverted current subsides.

This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels

(135 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges

in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-

214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding

current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000

TISP4xxxM3BJ series is available.

device symbol

RSD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

T(A)R(B)

SMBJ PACKAGE

(TOP VIEW)

MDXXBG

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

absolute maximum ratings, TA= 25°C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, (see Note 1)

‘4165

‘4180

‘4200

‘4265

‘4300

‘4350

VDRM

±135

±145

±155

±200

±230

±275

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

ITSP A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500

8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250

5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200

5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200

5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200

10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

ITSM

2.1 A

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A diT/dt 400 A/µs

Junction temperature TJ-40to+150 °C

Storage temperature range Tstg -65to+150 °C

NOTES: 1. See Applications Information and 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxH4BJ must be in thermal equilibrium with TJ=25°C.

3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.

4. See Applications Information and 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. See 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures

above25°C

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

electrical characteristics for the T and R terminals, TA= 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IDRM Repetitive peak off-

state current VD=±V

DRM TA=25°C

TA=85°C ±5

±10 µA

V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE =300Ω

‘4165

‘4180

‘4200

‘4265

‘4300

‘4350

±165

±180

±200

±265

±300

±350

V(BO) Impulse breakover

voltage

dv/dt ≤±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

‘4165

‘4180

‘4200

‘4265

‘4300

‘4350

±174

±189

±210

±276

±311

±363

I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE =300Ω±0.15 ±0.8 A

VTOn-state voltage IT=±5A,t

W=100µs ±3 V

IHHolding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.225 ±0.8 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5 kV/µs

IDOff-state current VD=±50V T

A= 85°C ±10 µA

Coff Off-state capacitance

f=100kHz, V

d=1Vrms,V

D=0,

f=100kHz, V

d=1Vrms,V

D=-1V

f=100kHz, V

d=1Vrms,V

D=-2V

f=100kHz, V

d=1Vrms,V

D=-50V

f=100kHz, V

d=1Vrms,V

D= -100 V

‘4165 thru ‘4200

‘4265 thru ‘4350

‘4165 thru ‘4200

‘4265 thru ‘4350

‘4165 thru ‘4200

‘4265 thru ‘4350

‘4165 thru ‘4200

‘4265 thru ‘4350

‘4165 thru ‘4200

‘4265 thru ‘4350

thermal characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RθJA Junction to free air thermal resistance

EIA/JESD51-3 PCB, IT=I

TSM(1000),

TA=25°C,(seeNote6) 113 °C/W

265 mm x 210 mm populated line card,

4-layer PCB, IT=I

TSM(1000),T

A=25°C 50

NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

-v VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAAB

VDRM

IDRM

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

TYPICAL CHARACTERISTICS

Figure 2. Figure 3.

Figure 4. Figure 5.

OFF-STATE CURRENT

JUNCTION TEMPERATURE

TJ- Junction Temperature - °C

-25 0 25 50 75 100 125 150

| - Off-State Current - µA

0·001

0·01

0·1

100 TCHAG

VD=±50V

NORMALISED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

TJ- Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakover Voltage

0.95

1.00

1.05

1.10 TC4HAF

ON-STATE CURRENT

ON-STATE VOLTAGE

VT- On-State Voltage - V

0.7 1.5 2 3 4 5 7110

- On-State Current - A

1.5

150

200

100

TA=25°C

tW=100µs

TC4HAHA

'4265

THRU

'4350

'4165

THRU

'4200

NORMALISED HOLDING CURRENT

JUNCTION TEMPERATURE

TJ- Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Holding Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4HAK

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

TYPICAL CHARACTERISTICS

Figure 6. Figure 7.

NORMALISED CAPACITANCE

OFF-STATE VOLTAGE

VD- Off-state Voltage - V

0.5 1 2 3 5 10 20 30 50 100150

Capacitance Normalised to V

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

TJ=25°C

Vd=1Vrms

TC4HAIA

'4165 THRU '4200

'4265 THRU '4350

DIFFERENTIAL OFF-STATE CAPACITANCE

RATED REPETITIVE PEAK OFF-STATE VOLTAGE

VDRM - Repetitive Peak Off-State Voltage - V

130 150 170 200 230 270 300

∆

∆C - Differential Off-State Capacitance - pF

∆

∆∆

∆C=C

off(-2 V) -C

off(-50 V)

TCHAJA

'4165

'4180

'4200

'4300

'4350

'4265

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

RATING AND THERMAL INFORMATION

Figure 8. Figure 9.

Figure 10. Figure 11.

NON-REPETITIVE PEAK ON-STATE CURRENT

CURRENT DURATION

t - Current Duration - s

0·1 1 10 100 1000

TSM(t)

- Non-Repetitive Peak On-State Current - A

1.5

TI4HAC

VGEN = 600 Vrms, 50/60 Hz

RGEN =1.4*V

GEN/ITSM(t)

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA=25°C

THERMAL IMPEDANCE

POWER DURATION

t-PowerDuration-s

0·1 1 10 100 1000

θJA(t)

- Transient Thermal Impedance - °C/W

1.5

150

100

TI4HAE

ITSM(t) APPLIED FOR TIME t

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA=25°C

VDRM DERATING FACTOR

MINIMUM AMBIENT TEMPERATURE

TAMIN - Minimum Ambient Temperature - °C

-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20

Derating Factor

0.93

0.94

0.95

0.96

0.97

0.98

0.99

1.00 TI4HAFA

'4265 THRU '4350

'4165 THRU '4200

IMPULSE RATING

AMBIENT TEMPERATURE

TA- Ambient Temperature - °C

-40-30-20-100 1020304050607080

Impulse Current - A

100

120

150

200

250

300

400

500

600

700

IEC 1.2/50, 8/20

ITU-T 10/700

FCC 10/560

BELLCORE 2/10

BELLCORE 10/1000

FCC 10/160

TC4HAA

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

APPLICATIONS INFORMATION

deployment

These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage

between two conductors ( 12) or in multiples to limit the voltage at several points in a circuit ( 13).

In 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is

normally used to protect circuits without a ground reference, such as modems. In 13, protectors Th2 and Th3

limit the maximum voltage between each conductor and ground to the ±V(BO) of the individual protector.

Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO) value. If the equipment

being protected has all its vulnerable components connected between the conductors and ground, then

protector Th1 is not required.

impulse testing

To verify the withstand capability and safety of the equipment, standards require that the equipment is tested

with various impulse wave forms. The table below shows some common values.

If the impulse generator current exceeds the protectors current rating then a series resistance can be used to

reduce the current to the protectors rated value and so prevent possible failure. The required value of series

resistance for a given waveform is given by the following calculations. First, the minimum total circuit

impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The

impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then

subtracted from the minimum total circuit impedance to give the required value of series resistance. In some

cases the equipment will require verification over a temperature range. By using the rated waveform values

from 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -

40 °C to 85 °C.

Figure 12. TWO POINT PROTECTION Figure 13. MULTI-POINT PROTECTION

STANDARD PEAK VOLTAGE

SETTING

VOLTAGE

WAVE FORM

µs

PEAK CURRENT

VALUE

CURRENT

WAVE FORM

µs

TISP4xxxH4

25 °C RATING

SERIES

RESISTANCE

Ω

GR-1089-CORE 2500 2/10 500 2/10 500 0

1000 10/1000 100 10/1000 100

FCC Part 68

(March 1998)

1500 10/160 200 10/160 250 0

800 10/560 100 10/560 160 0

1500 9/720 † 37.5 5/320 † 200 0

1000 9/720 † 25 5/320 † 200 0

I3124 1500 0.5/700 37.5 0.2/310 200 0

ITU-T K20/K21 1500

4000 10/700 37.5

100 5/310 200 0

† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator

Th1

Th3

Th2

Th1

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
9
NOVEMBER 1997 - REVISED JULY 1999
a.c. power testing
The protector can withstand currents applied for times not exceeding those shown in 8. Currents that exceed
these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature
Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the
current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it
may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing.
The current versus time characteristic of the overcurrent protector must be below the line shown in 8. In
some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator
failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V,
-2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated
by multiplying the VD= 0 capacitance value by the factor given in 6. Up to 10 MHz the capacitance is
essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on
connection inductance. In many applications, such as 15 and 17, the typical conductor bias voltages will be
about -2 V and -50 V. 7 shows the differential (line unbalance) capacitance caused by biasing one protector
at -2 V and the other at -50 V.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual
conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this
condition about 10 V of clipping is normally possible without activating the ring trip circuit.
10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value
should not be less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of 200 V,
can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of
-58 V (Th2 and Th3 in 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open
circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme
case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of
clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. 10
shows that this condition will occur at an ambient temperature of -22 °C. In this example, the TISP4265H4BJ
will allow normal equipment operation provided that the minimum expected ambient temperature does not fall
below -22 °C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51
standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3(1 ft3)
cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the
standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller
than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal
conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority
of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than
indicated by the JESD51 values.

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

typical circuits

Figure 14. MODEM INTER-WIRE PROTECTION Figure 15. PROTECTION MODULE

Figure 16. ISDN PROTECTION

Figure 17. LINE CARD RING/TEST PROTECTION

FUSE

TISP4350H4

AI6XBPA

RING DETECTOR

HOOK SWITCH

D.C. SINK

SIGNAL

MODEM

RING

TIP

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

PROTECTED

EQUIPMENT

E.G. LINE CARD

AI6XBK

R1a

R1b

Th3

Th2

Th1

AI6XBL

SIGNAL

D.C.

TEST

RELAY RING

RELAY SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

Th4

Th5

SLIC

PROTECTION

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

S3a

S3b

VBAT

220 nF

AI6XBJ

TISP6xxxx,

TISPPBLx,

½TISP6NTP2

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

MECHANICAL DATA

SMBJ (DO-214AA)

plastic surface mount diode package

This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SMB

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBHA

5,59

5,21

2,40

2,00

2,10

1,90

1,52

0,76

4,57

4,06

3,94

3,30 2

Index

Mark

(if needed)

2,32

1,96

0,20

0,10

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

MECHANICAL DATA

recommended printed wiring footprint.

device symbolization code

Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

carrier information

Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the

customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be

embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.

DEVICE SYMOBLIZATION

CODE

TISP4165H4BJ 4165H4

TISP4180H4BJ 4180H4

TISP4200H4BJ 4200H4

TISP4265H4BJ 4265H4

TISP4300H4BJ 4300H4

TISP4350H4BJ 4350H4

CARRIER ORDER #

Embossed Tape Reel Pack TISP4xxxH4BJR

Bulk Pack TISP4xxxH4BJ

SMB Pad Size

ALL LINEAR DIMENSIONS IN MILLIMETERS

2.40

2.16

2.54

MDXXBI

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

MECHANICAL DATA

tape dimensions

SMB Package Single-Sprocket Tape

ALL LINEAR DIMENSIONS IN MILLIMETERS

Direction of Feed

0,40 MAX.

4,5 MAX.

0MIN.

12,30

11,70

1,65

1,55

4,10

3,90

2,05

1,95

ø1,5MIN.

7,90

8,10

Embossment

Carrier Tape

5,55

5,45

1,85

1,65

Cover

Tape

8,20

MAX.

NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the

component cannot rotate more than 20° within the determined cavity.

B. Taped devices are supplied on a reel of the following dimensions:-

Reel diameter: 330 ±3,0 mm

Reel hub diameter 75 mm MIN.

Reel axial hole: 13,0 ±0,5 mm

C. 3000 devices are on a reel.

MDXXBJ

20°

Typical component

cavity centre line

Maximium component

rotation

Typical component

centre line

Index

Mark

(if needed)

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 1997 - REVISED JULY 1999

IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or serv-

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that the information being relied on is current.

TI warrants performanceof its semiconductor products and related software to the specifications applicable at the time of sale in

accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems neces-

sary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those man-

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In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be

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