NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features * * * * * www.onsemi.com Leading Planar Technology for Low Gate Charge/Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID Max (Note 1) 155 mW @ -10 V -30 V -1.95 A 240 mW @ -4.5 V P-Channel MOSFET S Applications * * * * DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera's, etc. Battery Charging Circuits G D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGS 20 V ID -1.95 A Drain Current (Note 1) t < 10 s TA = 25C TA = 70C Power Dissipation (Note 1) t < 10 s Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25C PD 1.25 W ID -1.13 A TA = 70C Steady State Pulsed Drain Current -1.56 tp = 10 ms Drain 3 PD 0.4 W -6.8 A TJ, TSTG -55 to 150 C Source Current (Body Diode) IS -1.25 A Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 C Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 300 C/W Junction-to-Ambient - t = 10 s (Note 1) RqJA 100 TR2 M G G SOT-23 CASE 318 STYLE 21 TR2 M G -0.90 IDM Operating Junction and Storage Temperature MARKING DIAGRAM/ PIN ASSIGNMENT 2 Source 1 Gate = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTR4502PT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NVTR4502PT1G SOT-23 (Pb-Free) 3000 / Tape & Reel THERMAL RESISTANCE RATINGS Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2003 October, 2016 - Rev. 6 1 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTR4502P/D NTR4502P, NVTR4502P Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = -250 mA -30 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = -30 V V TJ = 25C -1 TJ = 55C -10 VDS = 0 V, VGS = 20 V IGSS 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA -3.0 V Drain-to-Source On Resistance RDS(on) VGS = -10 V, ID = -1.95 A 155 200 mW VGS = -4.5 V, ID = -1.5 A 240 350 gFS VDS = -10 V, ID=-1.25 A 3 S Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = -15 V 200 pF Output Capacitance COSS 80 Reverse Transfer Capacitance CRSS 50 Forward Transconductance -1.0 CHARGES AND CAPACITANCES VGS = -10 V, VDS = -15 V; ID = -1.95 A 10 nC 5.2 10 ns 12 20 td(OFF) 19 35 tf 17.5 30 -1.2 Total Gate Charge QG(TOT) 6 Threshold Gate Charge QG(TH) 0.3 Gate-to-Source Charge QGS 1 Gate-to-Drain Charge QGD 1.7 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr VGS =-10 V, VDD = -15 V, ID = -1.95 A, RG = 6 W DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage VSD VGS = 0 V, IS = -1.25 A -0.8 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.25 A 23 V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR4502P, NVTR4502P VGS = -4.0 V VGS = -5.0 V 4 VGS = -3.6 V VGS = -7.0 V 3 VGS = -3.4 V VGS = -10 V VGS = -3.2 V 2 VGS = -3.0 V 1 VGS = -2.8 V VGS = -2.6 V VGS = -2.4 V 0 0 1 2 3 4 5 6 7 8 9 VDS = -10 V 5 TJ = 25C VGS = -3.8 V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 5 TJ = 25C TJ = 100C 3 2 1 0 10 TJ = -55C 4 1 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.3 0.25 0.2 0.15 0.1 4 5 6 7 8 9 10 4 5 7 6 0.3 TJ = 25C VGS = -4.5 V 0.25 0.2 VGS = -10 V 0.15 0.1 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE-TO-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1000 1.8 ID = -1.9 A VGS = -10 V VGS = 0 V -IDSS, LEAKAGE (nA) 1.6 1.4 1.2 1 0.8 0.6 -50 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = -1.95 A TJ = 25C 3 3 Figure 2. Transfer Characteristics 0.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics 0.35 2 -VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 150C 100 10 TJ = 100C 1 -25 0 25 50 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (C) 6 10 14 18 22 26 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage www.onsemi.com 3 30 NTR4502P, NVTR4502P 500 C, CAPACITANCE (pF) VDS = 0 V 400 CISS 300 CRSS TJ = 25C VGS = 0 V CISS 200 COSS 100 CRSS 0 10 5 0 5 10 15 20 25 30 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 12 18 QT 10 15 8 12 9 6 QGS QGD 4 6 2 3 ID = -1.95 A TJ = 25C 0 0 0 1 2 3 4 5 6 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 7 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 3 VDS = -15 V ID = -1.95 V VGS = -10 V tf td(off) t, TIME (ns) -IS, SOURCE CURRENT TJ = 25C tr 10 td(on) 2.5 2 1.5 1 0.5 0 1 1 10 100 0.3 0.6 0.9 RG, GATE RESISTANCE (W) -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current www.onsemi.com 4 1.2 NTR4502P, NVTR4502P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4502P/D