SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive * Low ON-resistance: Unit: mm Ron = 480 m (max) (@VGS = -4 V) 2.10.1 Ron = 240 m (max) (@VGS = -10 V) 1.70.1 Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS 20 V DC ID -1.4 Pulse IDP -2.8 PD (Note 1) 800 PD (Note 2) 500 Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain current Drain power dissipation 1 3 2 0.1660.05 Rating A 0.70.05 Symbol 2.00.1 Characteristic 0.650.05 Absolute Maximum Ratings (Ta = 25C) +0.1 0.3 -0.05 * mW 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 -30 V (BR) DSX ID = -1 mA, VGS = + 20 V -15 Unit V Drain cutoff current IDSS VDS = -30 V, VGS = 0 -1 A Gate leakage current IGSS VGS = 16 V, VDS = 0 1 A -1.2 -2.6 V S Vth VDS = -5 V, ID = -1 mA Forward transfer admittance Yfs VDS = -5 V, ID =- 0.65 A (Note 3) 0.8 1.5 Drain-source ON-resistance RDS (ON) ID = -0.65 A, VGS = -10 V (Note 3) 180 240 ID = -0.4 A, VGS = -4 V (Note 3) 360 480 Gate threshold voltage m Input capacitance Ciss VDS = -15 V, VGS = 0, f = 1 MHz 137 pF Output capacitance Coss VDS = -15 V, VGS = 0, f = 1 MHz 39 pF Reverse transfer capacitance Crss VDS = -15 V, VGS = 0, f = 1 MHz 20 pF ton VDD = -15 V, ID = -0.65 A, 15 toff VGS = 0 to -4 V, RG = 10 14 0.85 1.2 Switching time Turn-on time Turn-off time Drain-source forward voltage VDSF ID = 1.4 A, VGS = 0 V (Note 3) ns V Start of commercial production Note 3: Pulse test 2005-12 1 2014-03-01 SSM3J118TU Switching Time Test Circuit (a) Test circuit 0 (b) VIN OUT 0V 10% IN RG -4 V 10 s (c) VOUT VDD VDD = -15 V RG = 10 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 90% -4 V RL VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJA 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM3J118TU ID - VDS ID - VGS -3.0 -10 Common Source VDS = -5 V -6 V (A) (A) -2.0 -1 ID -4 V -3.6 V -1.5 VGS = -3.3 V -1.0 -0.1 Drain current Drain current ID -10 V -2.5 Ta = 100 C 25 C -0.01 -25 C -0.5 -0.001 Common Source Ta = 25C 0 0 -0.2 -0.4 -0.6 -0.8 Drain-source voltage VDS -0.0001 0 -1 (V) -0.5 -1.0 -1.5 VGS -3.5 -4.0 (V) 1000 ID = -0.65 A 900 Ta = 25C 800 700 600 500 25 C 400 Ta =100 C 300 200 -25 C 100 0 -2 -4 -6 Gate-source voltage -8 VGS Common Source 900 Common Source Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) -3.0 RDS (ON) - ID RDS (ON) - VGS 800 700 600 500 VGS = - 4.0V 400 300 200 - 10 V 100 0 -10 0 -0.5 -1.0 (V) RDS (ON) - Ta -2.0 ID -2.5 -3.0 (A) Vth - Ta -2.0 Vth (V) Common Source Gate threshold voltage 800 600 ID = -0.4 A / VGS = -4.0 V 400 200 0 -50 -1.5 Drain current 1000 Drain-source on-resistance RDS (ON) (m) -2.5 Gate-source voltage 1000 0 -2.0 -0.65 A / -10 V -1.5 -1.0 -0.5 Common source VDS = -5 V 0 0 50 Ambient temperature 100 Ta -50 150 (C) ID = -1 mA 0 50 Ambient temperature 3 100 Ta 150 (C) 2014-03-01 SSM3J118TU IDR - VDS 10 10 Common Source (A) Common Source VDS = -5 V 1 1 0.3 0.1 -0.01 Ta = 25C IDR Ta = 25C 3 -1 -0.1 Drain current ID IDR G S 0.1 Ta = 100 C 0.01 25 C 0.001 -25 C 0.0001 0 -10 D VGS = 0 V Drain reverse current Forward transfer admittance Yfs (S) |Yfs| - ID 0.2 (A) 0.4 0.6 Drain-source voltage 0.8 1.0 VDS 1.2 (V) t - ID C - VDS 600 1000 toff (ns) Switching time Capacitance 100 tf t 300 C (pF) 500 Ciss 100 50 Coss 30 10 ton tr Crss 10 -0.1 -1 -10 Drain-source voltage 1 -0.01 -100 VDS -0.1 Drain current (V) Cu Pad : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) Transient thermal impedance Rth (C/W) (mW) (A) c 2 (25.4 x 25.4 x 1.6 mm b: Mounted on a ceramic board PD Drain Power Dissipation ID 600 a: Mounted on an FR4 board 2 b b a 100 600 a 400 10 a: Mounted on a ceramic board 200 0 -40 -10 t - ID PD - Ta 1000 800 -1 (25.4 x 25.4 x 0.8 mm 2 Cu Pad : 645 mm ) b: Mounted on an FR4 board 1 -20 0 20 40 60 80 Ambient temperature 0.001 100 120 140 160 Ta 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 0.01 0.1 1 Pulse Width (C) 4 10 100 600 tw (s) 2014-03-01 SSM3J118TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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