Vishay Siliconix
SUD19N20-90
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A)
200 0.090 at VGS = 10 V 19
0.105 at VGS = 6 V 17.5
T O-252
S GD
T op V i e w
Drain Connected to T a b
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)bTC = 25 °C ID
19
A
TC = 125 °C 11
Pulsed Drain Current IDM 40
Continuous Source Current (Diode Conduction) IS19
Avalanche Current IAS 19
Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ
Maximum Power Dissipation TC = 25 °C PD
136b
W
TA = 25 °C 3a
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambientat 10 s RthJA
15 18
°C/W
Steady State 40 50
Junction-to-Case (Drain) RthJC 0.85 1.1
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Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
Vishay Siliconix
SUD19N20-90
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.a Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 200 V, VGS = 0 V 1
µA
VDS = 200 V, VGS = 0 V, TJ = 125 °C 50
VDS = 200 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain CurrentbID(on) V
DS =5 V, VGS = 10 V 40 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 5 A 0.075 0.090
VGS = 10 V, ID = 5 A, TJ = 125 °C 0.190
VGS = 10 V, ID = 5 A, TJ = 175 °C 0.260
VGS = 6 V, ID = 5 A 0.082 0.105
Forward Transconductancebgfs VDS = 15 V, ID = 19 A 35 S
Dynamica
Input Capacitance Ciss
VGS = 0 V, VDS = 25 V, F = 1 MHz
1800
pFOutput Capacitance Coss 180
Reverse Transfer Capacitance Crss 80
Total Gate ChargecQg
VDS = 100 V, VGS = 10 V, ID = 19 A
34 51
nC
Gate-Source ChargecQgs 8
Gate-Drain ChargecQgd 12
Gate Resistance Rg0.5 2.9
Tur n - On D el ay T ime ctd(on)
VDD = 100 V, RL = 5.2
ID 19 A, VGEN = 10 V, Rg = 2.5
15 25
ns
Rise Timectr50 75
Turn-Off Delay Timectd(off) 30 45
Fall Timectf60 90
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current ISM 50 A
Diode Forward VoltagebVSD IF = 19 A, VGS = 0 V 0.9 1.5 V
Source-Drain Reverse Recovery Time trr IF = 19 A, dI/dt = 100 A/µs 180 250 ns
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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Vishay Siliconix
SUD19N20-90
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
0
10
20
30
40
0246810
6 V
VGS = 10 V thru 7 V
4 V
5 V
0
10
20
30
40
50
60
70
0 10203040
- Transconductance (S)g fs
TC = - 55 °C
25 °C
125 °C
ID- Drain Current (A)
0
500
1000
1500
2000
2500
0 40 80 120 160 200
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
VGS - Gate-to-Source Voltage (V)
- D r a i n C urrent (A)ID
0
10
20
30
40
0123456
-55 °C
TC = 125 °C
25 °C
- On-Resistance ()
ID
- Drain Current (A)
RDS(on)
0.00
0.05
0.10
0.15
0.20
0 1 02 03 040
VGS = 10 V
V
GS
= 6 V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
4
8
12
16
20
0 102030405060
V
DS
= 100 V
I
D
= 19 A
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Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
Vishay Siliconix
SUD19N20-90
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767.
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ- Junction Temperature ( )°C
VGS = 10 V
ID = 5 A
RDS(on) - On-Resistance
(Normalized)
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
- S o urce Current (A)IS
100
10
10.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
10
0.1
00 0 1 0 1 1 1 . 0
Limited by RDS(on)*
1
100
T
C
= 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
100 µs
10 µs
100
1 ms
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
ID - Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-410-310-21010-11
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Dec-2019 1Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
Note
• Dimension L3 is for reference only
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Dec-2019 2Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VERSION 2: FACILITY CODE = N
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
E
D
L3
b3
A
c2
θ
E1
D1
(3°)
(3°)
3x b
2x b2
2x
H
0.25 C A B
e
e
eE1/2
DETAIL "B"
A1
L2
L
(L1)
H
CSEATING
PLANE
C
C
(b)
c
c1
b1
DETAIL "B"
GAUGE
PLANE
L4
L5
θ
θ
L6
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.39
A1 - 0.13
b 0.65 0.89
b1 0.64 0.79
b2 0.76 1.13
b3 4.95 5.46
c 0.46 0.61
c1 0.41 0.56
c2 0.46 0.60
D 5.97 6.22
D1 5.21 -
E 6.35 6.73
E1 4.32 -
e 2.29 BSC
H 9.94 10.34
L 1.50 1.78
L1 2.74 ref.
L2 0.51 BSC
L3 0.89 1.27
L4 - 1.02
L5 1.14 1.49
L6 0.65 0.85
0° 10°
1 0° 15°
2 25° 35°
MILLIMETERS
DIM. MIN. MAX.
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 01-Jan-2019 1Document Number: 91000
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