2SA1011 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Complement to 2SC2073
ABSOLUTE MAXIMUM RATINGS (TA=25℃
℃℃
℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipati on (Tc=25℃)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
-180
-160
-5
-3
10
150
-50~150
V
V
V
A
W
℃
℃℃
℃
℃
℃℃
℃
ELECTRICAL CHARACTERISTICS (TA=25℃
℃℃
℃)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
I
CBO
IEBO
hFE1
VCE(sat)
fT
V
CB= -120V , IE=0
V
EB= -5V , IC=0
V
CE= -10V ,IC=-0.5A
IC=-0.5A ,IB=--50mA
V
CE= -10V ,IC=-0.5A
60
100
-10
-10
200
-1.5
µA
µA
V
MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
