Insulated Gate Bipolar Transistors (IGBT) The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of MOSFET s. Advantages to the user: @ rugged, short-circuit-proof device (S-series and D-series) @ operation without protective snubber networks possible @ frequency range to well above 20 kHz @ low switching losses @ compact equipment design @ high efficiency The IGBT is suitable for numerous applications in power electronics, Table 1: Standard iGBT (page 15,16) especially in Pulse Width Modulated servo and three-phase drives requiring high dynamic range control and low noise. It also can be used in Uninter- ruptible Power Supplies (UPS), Switch Mode Power Supplies (SMPS), and other power circuits requiring high switch repetition rates. IGBTs improve dynamic performance and efficiency and reduce the level of audible noise. IGBTs are equally suitable in resonant converter circuits. Optimized IGBTs are available for both low conduction loss and low switching loss. See table 1 and 2. Discrete standard "G" series IGBTs (page 15,16) are characterized by a high control gain, which limits their short-circuit withstand time. Newer "S" and "D" series products utilize newly developed IGBT chips capable of withstanding up to 10 us in short-circuit, even with a 15 V gate drive. A switch is only as good as its compa- nion free-wheeling diode. For this reason, all IGBTs with integrated diodes incorporate ultra-fast-recovery epitaxial diodes (FREDs) with very low reverse recovery Charge (Q,). These same diodes are also available as separate elements for use in IGBT circuits or any other application requiring high diode switching speeds. The IGBT modules use Direct Copper Bonded (DCB) substrates, which consist of an aluminium oxide (AI,O,) insulator to which copper is directly bonded using the latest techniques developed by ixYS. Table 2: Devices with improved SCSOA capability (page 11) SCSOA = Short Circuit Safe Operation Area Table 3: NPT IGBT Modules and Discretes (SCSOA) pages 12/13/14 Type Single-IGBT Single-IGBT Type Single -IGBT Single-IGBT with Diode with Diode IXGA..N.. IXGA..N..U1 IXSA..N IXSH..N..U1 IXGP..N.. IXGP..N..U4 IXSP..N IXSN..N..U1 IXGH..N.. IXGH..N..U1 IXSH..N IXGN..N. IXSM..N IXGA..N.A IXGA..N..AU1 IXSP..N..A IXSH..N..AU1 IXGP..N..A IXGP..N..AU1 IXSH..N.A IXSX..N..AU1 IXGH..NLA iXGH..N..AUI (XSM..N.A (XSK..NUAUT IXGK..N.A IXGX..N..AU1 IXSN..N.A IXSN..N.AU1 IXGN..N.A IXGK..N..AU1 IXSH..N..B IXSH..N..BD1 IXGM..N.A IXGH..N..BD1 IXST..N..B iXSX..N..BD1 IXGA..N..B IXGX..N..BD1 IXST..N..BD1 IXGP..N..B IXGT..N..BD1 IXSK..N..BD1 IXGH..N..B IXGK..N..BD1 |--- J ee IXGT..N..B IXGN..N..BD1 rer IXSH..N..C VXST..N..CD4 IXGN.N.B mere | iXGA.N.C IXGA..N..CD1 aaa IXGP..N..G IXGP..N..CD1 IXGH..N..C ICGH..N..CD1 Type Dual pack Buck and Boost Sixpack MWI..-12A5 Mil..-12A3 MUL.-12A4 MIO/MDI..-12A3 MID/MDI.,.-12A4 Type Single, IGBT IGBT with Diode IXDH..N IXDH..N..D4 IXDN..N..D1 ~ | IXDA.N.A | IXDP.N.AU)==6|t~<s:~siSSY IXDP..N..A IXDH..N..AU1 IXDH..N..A IXDT..N..AU1 IXDN..N.A IXDN..N..AUI IXDP..N..B IXDP..N..BD1 IXDH..N..B IXDH..N..BD1 Contact IXYS for high reliability screening options. The IGBT devices described in this publication are ESD sensitive. Normal precautions relative to the handling and installation of such products must be observed. IEC 60747Insulated Gate Bipolar Transistors (IGBT) S series with SCSOA capability Typs Voss I, i Vegieat c, Eon t, the | Rinse P, . Package style 6 max. | typ. | typ. | typ max. | max. 3 Outlines on page 51, 52 : Ty = 150C T, = 25C! T, = 90C 25C | 25C @ | C= Collector, E = Emitter. | New Vv A A Vv pF | mJ | ous ps | KW Ws |i | G= Gate, KE = Kelvin Emitter | > IXSA 16N60 60032 16 23 | 620: 191631 5 | 125! 100 |5a/Fig.5a > IXSP_16N60 32 Coot 3 | TO-263AA IXSH 24N60 48 24 22 | 1800/ 35j05 10) O88! 150 | 6 Weight 5 g 1XSM 30N60 50 30 25 | 2800) 50 }04 i 0.62 | 200 [13a = 29 fe a IXSM 40N6Q 75 40 25 | 4500) 5.0 [04 0.42 | 300 43a _ . 3 IXSH 25N100 1000} 50 25 3.5 | 2800! 10.0 |1.2 10 | 062 | 200 , 6 Fig. 3 TO-220AB & _IXSM 25N100 50 _ 13a, Welght= 4g : IXSH 45N100 75 45 27 , 4150/150/10 | 10 | 042 | 306 | 6 IXSM_45N100 75 _ _ji3e IXSH_45N120 1200| 75 45 3.0 | 4275|21.0/1.0 | 10 | 042 | 300 | 6 oo , IXSH 24N60A 600/48 24 27 | 1500] 20/0275; 10 | 0.83] 150 | Fig 6 To-247 AD > IXSH 24N60B 48 24 2.0 | 2300] 1.4 10.15 | 10 | 083 | 180 | 6 Weigh: 6g > IXSH 24N60C 48 24 2.5 | 2300] 0.5 |6.075| 10 | 083 | 150 | 6 > IXSH 30N60B 55 30 20 | 3100] 15/074 | 10 | 062 | 200 | 6 > IXSH 30N60C 55 30 25 | 3100| 07/007 | 10 | 0.62! 200 | 6 IXSM 30N60A 50 30 3.0 | 2800] 25 02 | 10 | 062) 200 it: IXSM_40N60A 75 40 3.0 | 4500] 25 [0.2 | 10 | 0.42 | 300 6 \> IXSH 40N60B 75 40 25 | 3700] 12/04: | 10} 045 | 280 a E> IXST_40N60B 75 9! big 7 PLUS2A7 g > IXSH SON6OB 75 50 25 | 3650] 33/015 | 10 | 05 | 250 Weight = 6 g 2 __IXSN 80N60A 160 80 3.0 | 8500| 10.0 | 0.45 0.25 | 500 = IXSH 35N100A = [1000/70 35 3.5 | 4400/10.0/07 | 10 | 0.42 | 300 IXSM_35N100A 70 . D: IXSH 25N120A = |1200] 50 25 4.0 | 2850] 96 Jo.6s | 10 | 063 | 200 |e, S,* IXSH 35N120A 70 35 3750) 10.0 |.7 |) 10 | 042) 300 15) 8 IXSN_5S5N120A 110 55 7600| 18.0 |.7_ | 10 | 0.25 | 500/12! Fig. 10 TO-268 IXSH 35N135A 1350| 70 35 4.0 | 4150/1290 /4 | 10 | 042 | 300 | 6 | Weight IXSH 35N140A 1400[ 70 35 40 | 450/120 [04 | 10! 042 | 300 |e) =49 4 Fig. ti r 7, TO-264 AA IGBT with Diode S series with SCSOA capability % \XSH 24NEQU1 60048 24 22, 1800] a5 cs | 10 | 08s 38 _XSN_ 62NeoUIe 90 50 25 | 4500| 50104 | 16 | 050 = __IXSN 35N100U1@ [1000/38 25 3.5 | 45001 68/20 | 10 | 0.61 2 2 IXSN 35N120U1 @ [1200/38 25 35 | 4500| 68 [20 | 10 | 061 | 205 112) Fig. 12 IXSH 10NGOAUt | 600] 20 10 3.0 | 750/0.75 /0175} 5 | 1.25) 100 | 6 | SOT-227B miniBLOC IXSA 12N60AU1 24 12 25 750} 1.0 10.2 5 | 1.25 | 100 isa, Weight = 30g IXSH 24N60AU1 48 24 2.7 | 1500) 2.0 /0.275; 10 | 083] 150 (6 | A. .. o> IXSH 24N60BD1 48 24 2.0 | 2300| 111015 | 10 | 088 | 150 6) Wie > IXSH 24N60CD1 48 24 2.5 | 2300| 0.8 }0.076| 10 | 0.83 | 150 . 8 (XSH_30N60AU1 50 30 3.0 | 2600/ 25,02 | 10 | 0.62 | 200 > IXSH 30N60BD1 55 30 20 | 3100! 15 0.14 | 10 | 062 | 200 > IXST 30N60BD1 > IXSK 30N60BD1 - IXSH 3ON6OCD1 55 30 25 | 3100).07 10.07 | 10 | a62 | 200 | rig. 13% > IXST 30N60CD1 1) PIB Ma : IXSK 3ONG0CD1 ; 11, 10-204 AE 4 IXSK SONGOAUT 75 50 27 | 4500| 60/04 | 10 | o42 | a0 41) Wes t2e 4 > IXSX 5O0NGOBD1 a 3.> IXSK 50N60BD1 vee u iS EXSN 52N60AU1 @ 80 40 3.0 | 4500) 35 }0.2 | 10 | 050} 250 (12: IXSN_BONGOAUT @ | 160 80 3.0 | 8500/10.0 }0.45 | 10 | 0.25 | 500 (12 IXSH 10N120AU1 1200] 20 10 40 | g00/ 25s/o62 | 5 | 125) 100 | 6 IXSH 25N120AU1_ 50 25 2050| 9.6 10.65 | 1 | 062! 200 16 1XSX 35N120AU1 70 35 40 | 3900/100/05 | 10 | 042! 300 | ? IXSK_35N1420AU1 70 ni cee teen IXSN_35N120AU10 70 3 | 40 | 3900/100 105 | 10 | 042 | 300 | 12) das Kelvin or Main IXSN 35N120AU22 50 31 36 | 38001 6.0/0.7 | 10 | 046 | 270 (32) 2. donstConfiguratien IXSN 35N120AU2@ ; 125s Busk Configuratic: IXSN_55N120AU10 110 55 40 | sooolisaic7 | 10 | 0.25 | 500 (12 7: