Rugged Power MOSFETs File Number 2029 Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V fos(on) = 1.00 and 1.50 Features: @ Single pulse avalanche energy rated B SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFF330R, IRFF331R, IRFF332R and IRFF333R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified tevel of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal package. Absolute Maximum Ratings IRFF330R, IRFF331R, IRFF332R, IRFF333R N-CHANNEL ENHANCEMENT MODE SOURCE o 6O- s s2cs-42650 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN (CASE) JEDEC TO-205AF Parameter IRFF330R | IRFF331R | IRFF332R | IRFF333R Units Vos Drain - Source Voltage 400 350 400 350 V Voga Drain - Gate Voltage (Ras = 20 KQ) @ 400 350 400 350 Vv lp @ Te = 25C Continuous Drain Current 3.5 3.5 3.0 3.0 A los Pulsed Drain Current @ 14 14 12 12 A Vas Gate - Source Voltage +20 Vv Po @ Tc = 25C Max. Power Dissipation 25 (See Fig. 14) Ww Linear Derating Factor 0.2 (See Fig. 14) wit Eas Single Pulse Avalanche Energy Rating @ 300 mj the ak ee 5 10 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) c 6-249Rugged Power MOSFETs IRFF330R, IRFF331R, IRFF332R, IRFF333R Electrical Characteristics @ Tc = 25C (Untess Otherwise Specified) Pi t Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage | IRFF330R = IRFF332R | 49 | | V | Vas=0Vv IRFF331R = IRFF333R 350 _ _ Ip = 250uA Vasim Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Ves, Ip = 2507 A loss Gate-Source Leakage Forward ALL = = 100 nA__| Ves = 20V less Gate-Source Leakage Reverse ALL _ -100 nA Vag = -20V loss Zero Gate Voltage Drain Current = = 250 BA Vos = Max. Rating, Vas = OV ALL | | 1000 | pA | Vos = Max. Rating x 0.8, Vos = OV, Tc = 125C loom On-State Drain Current @ IRFF330R | 35 _ _ A IRFF331R Vos > loton: X Rosion max. Vos = 10V IRFF332R | 44 _ _ A IRFF333R . Roston Static Drain-Source On-State IRFF330R | 08 10 2 Resistance @ (REF331R , = = Ves = 10V, In = 2.0A IRFF332R | 10 15 0 IRFF333R . . fs Forward Transconductance @ ALL 2.0 3.5 = S(0)_| Vos > loon X Rosionimax., lp = 2.0A | Cras Input Capacitance ALL = 700 = pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL 150 pF See Fig. 10 Cras Reverse Transfer Capacitance ALL = 40 = pF : taton Turn-On Delay Time ALL _ 30 ns Vop = 175V, tp = 2.0A, Zo = 15 t Rise Time ALL _ - 35 ns See Fig. 17 tater Turn-Off Delay Time ALL _ _ 55 ns (MOSFET switching times are essentially th Fall Time ALL _ _ 35 ns independent of operating temperature.) Qs Total Gate Charge ALL _ 18 39 nc Vas = 10V, lo = 7.0A, Vos = 0.8V Max. Rating. _{Gate-Source Plus Gate-Drain)} See Fig. 18 for test circuit. (Gate charge is Qgs Gate-Source Charge ALL _ nc essentially independent of operating Que ___Gate-Drain (Miller) Charge ALL = 7.0 _ nc__| temperature.) bo Internal Drain Inductance ALL _ 5.0 _ nH Measured from the Modified MOSFET drain tead, 5 mm symbol! showing the (0.2 in.) from header internal device , to center of die. inductances 10 Ls Internal Source Inductance ALL _ 15 _ nH Measured from the source lead, 5 mm G Ls (0.2 in.) from ~ header to source $ bonding pad. ores esses Thermal Resistance RnJC _Junction-to-Case ALL _ _ 5.0 C/w RJA Junction-to-Ambient ALL _ _ 175 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (RFF330R | __ _ 35 A Modified MOSFET symbol (Body Diode) IRFF331R " showing the integral D IRFF332R A reverse P-N junction rectifier. IRFF333R | ~ | | 2 Isa Pulse Source Current IRFF330R | _ 14 A 6 (Body Diode) @ IRFF331R Q IRFF332A snes -arese inFF3a3R | ~ | | % | A Vsp Diode Forward Voltage @ IRFF330R _ = 9R = = IRFF331R ~ 1.6 v To = 25C, Is = 3.5A, Ves = OV IRFF332R = = = IRFF333R 15 v To = 25C, ts = 3.0A, Vas = OV tr Reverse Recovery Time ALL 600 = ns Ty = 150C, tr = 3.5A, dis/dt = 100A/ys Qnrr Reverse Recovered Charge ALL 4.0 = uC Ty = 150C, te = 3.5A, dir/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty, = 25C to 150C. @ Pulse Test: Pulse width < 300ys, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 5OV, starting Ty = 25C, L = 42.85mH, Rgs = 252, Ipeak = 3.5A. 6-250Rugged Power MOSFETs IRFF330R, IRFF331R , IRFF332R, IRFF333R 80 us PULSE Vos >! pion * Boston) max. a a a g g = = = 3 =z = $ 5 z Ty = #12500 z 2 = = 5 Ty: 3 3 z z Ty -5506 < x = 5 a a 3 s 0 ' 2 a 4 5 6 7 0 50 100 180 200 250 300 Vgs. GATE. TO SOURCE VOLTAGE (VOLTS) Vos. ORAIN-TO.SOURCE VOLTAGE (VOLTS) . ; _ Fig. 2 - Typical transfer characteristics. Fig. 1 - Typical output characteristics. TION IN THIS AREA 20} peragor, 1S LIMITED BY Aosion) 10 5 as 02 Ip, DRAIN CURRENT (AMPERES) 1g. DRAIN CURRENT (AMPERES) DIES Te = 250C 005 Ty = 150C MAX, Rinse = 5.0 KW 0.02 SINGLE PULSE IRFF331R, 333A 44 IRFF330A, 332R 0 2 4 6 8 10 0.01 Vps, DRAIN TO SOURCE VOLTAGE (VOLTS) 02 5 10 20 80 100 200 $00 Vpg, ORAIN-TD-SQURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. (UL THERMAL IMPEDANCE (PER UNIT) e nw Zrpactt/ Paggc. NORMALIZED EFFECTIVE TRANSIENT 0.1 ial 2 0.08 1. OUTY FACTOR, 0 zt an 2. PER UNIT BASE * Aypjc 6.0 066, CW. 3. Tym - Te * Pom Zenucit). 2 & wt 2 5S ws? 5 2 2 6 pl 2 5 i 2 . 0 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-251Rugged Power MOSFETs IRFF330R, IRFF331R, IRFF332R, IRFF333R 10 102 Ty= 15000 | 6 Ty -B56 Ty = 250C 4 Ty = 125C SET, = 150C Sts. TAANSCONDUCTANCE {SIEMENS} pg. REVERSE ORAIN CURRENT (AMPERES) Vos > 'ptont * Ansion) max 80 us PULSE TEST Ty = 250C 19 0 2 4 6 a 10 0 1 2 3 4 tp, ORAIN CURRENT (AMPERES) Vg. SOURCE. TO-ORAIN VOLTAGE 'VOLTS) Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 426 116 s a (NORMALIZED) o 2 o Vgg = 10V Ip = 2.08 Ripston). ORAIN TO-SOURCE ON RESISTANCE O88 BVpsg, GRAIN TO SOURCE BAEAKDOWN VOLTAGE (NORMALIZED) 4 M0 Q 40 a0 4120 160 40 0 40 80 120 160 Ty JUNCTION TEMPERATURE (0C) Ty, JUNCTION TEMPERATURE (OC) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 2000 Ves* = 1 Mae 1600 Cig Coy + Cog, Cay SHORTED # Cree * Cog S % Com Con * Tey pg 3 8 1200 = Cay + Cog 3 z > < cre) = 3 < 3 ~ 2 3 800 o 2 @ \ % : 400 & Ige7A FOR TEST CIRCUIT SEE FIGUAE 18 0 10 20 30 4 50 0 8 16 a 32 40 Vos. ORAIN-TO-SOQURCE VOLTAGE (VOLTS} Qy. TOTAL GATE CHARGE In) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-252Rugged Power MOSFETs IRFF330R, iRFF331R, IRFF332R, IRFF333R Ves" vov / 2 ir Ves* aw | IRFF330R, 331A N Tc, CASE TEMPERATURE (C) Rosion). ORAIN-TO-SOUACE ON RESISTANCE (OHMS) Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) \ L 1 1 0 5 10 15 20 25 30 4s 50 75 100 126 150 Ip, DRAIN CURRENT (AMPERES) ty. ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. Fig. 13 - Maximum drain current vs. case temperature. Vos VARY tp TO OBTAIN REQUIRED PEAK I + ~ Yop 9208-42659 Fig. 15 - Unclamped Energy Test Circuit Pp, POWER DISSIPATION (WATTS) 0 20 a0 60 80 100 420 140 Tc. CASE TEMPERATURE (0C} Fig. 14 - Power vs. temperature derating curve. 92CS- 42660 Fig. 16 - Unclamped Energy Waveforms Vos ISOLATED 5UPPLY) CURRENT REGULATOR SAME TYPE Ypo = 175V AS DUT 12v T gatreny | OH _ 50 vi Yo TO SCOPE PRE = 1hHe Fig. 17 - Switching time test circuit. CURRENT > CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 - Gate charge test circuit. 6-253