© 2009 IXYS All rights reserved
CS 60
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM (lead current limit) 75 A
IT(AV)M TC = 105°C; 180° sine 48 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1400 A
VR = 0 V t = 8.3 ms (60 Hz), sine 1500 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A
VR = 0 V t = 8.3 ms (60 Hz), sine 1340 A
i2tTVJ = 45°C t = 10 ms (50 Hz), sine 9800 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 9500 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 7800 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 7500 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 60 A 150 A/μs
f = 50 Hz, tP =200 μs
VD = 2/3 VDRM
IG = 0.3 A non repetitive, IT = IT(AV)M 500 A/μs
diG/dt = 0.3 A/μs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/μs
RGK = ; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 μs10W
IT = IT(AV)M tP = 300 μs5W
PG(AV) 0.5 W
VRGM 10 V
TVJ -40...+140 °C
TVJM 140 °C
Tstg -40...+125 °C
FCMounting Force 20...120/4.5...27 N/lbs
Weight 6g
Features
zThyristor for line frequency
applications
zJunction coated, planar passivated
die
zLong-term stability of blocking
currents and voltages
zRoHS compliant
zEpoxy meets UL 94V-0
zInternational standard package
Applications
zMotor control
zPower converter
zAC power controller
zLight and temperature controls
Advantages
zEasy to mount
zTab tin plated for surface mount
zSpace and weight savings
zSimple mounting
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Phase Control Thyristor VRRM = 1200-1600 V
IT(RMS) = 75 A
IT(AV)M = 48 A
VRSM VRRM Part Number
VDSM VDRM
VV
1300 1200 CS 60-12io1
1500 1400 CS 60-14io1
1700 1600 CS 60-16io1
AC
G
C = Cathode, A = Anode, G = Gate
PLUS247
G
C
A (TAB)
A
20090602
© 2009 IXYS All rights reserved
CS 60
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM 10 mA
TVJ = 25°C0.2 mA
VTIT= 100 A; TVJ = 25°C1.4 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V
rT3.7 mΩ
VGT VD = 6 V; TVJ = 25°C1.5 V
TVJ = -40°C1.6 V
IGT VD = 6 V; TVJ = 25°C100 mA
TVJ = -40°C200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD 10 mA
ILTVJ = 25°C; tP = 10 μs450 mA
IG = 0.45 A; diG/dt = 0.45 A/μs
IHTVJ = 25°C; VD = 6 V; RGK = 200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2μs
IG = 0.45 A; diG/dt = 0.45 A/μs
RthJC DC current 0.32 K/W
RthJK DC current 0.47 K/W
Terminals: 1 - Cathode
2 - Anode
3 - Gate
Tab - Anode
PLUS247TM Outline
All leads and backside tab are tin plated.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
0.0 0.5 1.0 1.5 2.0
0
40
80
120
160
200
IT
[A]
VT [V]
TVJ = 25°C
TVJ = 125°C
Fig. 1 Forward characteristics
20090602