A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 5.0 mA VGS = 0 V 65 V
IDSS VDSS = 28 V VGS = 0 V 0.5 mA
IGSS VGS = 40 V VDS = 0 V 1.0 µA
VGS(th) VDS = 10 V ID = 10 mA 1.0 6.0 V
gfs VDS = 10 V ID = 100 mA 50 mmhos
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 3.0
4.2
0.45
pF
NF VDS = 28 V ID = 100 mA f = 400 MHz
ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7 3.0
dB
Gps
η VDD = 28 V IDQ = 100 mA f = 400 MHz
Pout = 2.0 W
16
45 20
55 dB
%
ψ VDD = 28 V IDQ = 100 mA Pout = 2.0 W
VSWR = 30:1 at all phase angles f = 400 MHz NO DEGRADRADATION IN OUTPUT POWER
POWE FIELD EFFECT TRANSISTOR
MRF160
DESCRIPTION:
The MRF160 is an Enhancement-
Mode N-Channel TMOS designed for
wideband large-signal amplifier and
oscillator applications to 500 MHz.
MAXIMUM RATINGS
ID 0.5 mA
VDSS 65 V
VGS ±40 V
PDISS 8.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 13.2 °C/W
PACKAGE STYLE .280 4L PILL
Style 3
