1MBI400S-120 IGBT Module 1200V / 400A 1 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Unit Symbol Rating V VCES 1200 V VGES 20 A Tc=25C IC 600 A Tc=80C 400 A Tc=25C IC pulse 1200 A Tc=80C 800 A -IC 400 A 1ms -IC pulse 800 W Max. power dissipation PC 3100 C Operating temperature Tj +150 C Storage temperature Tstg -40 to +125 Isolation voltage *1 V is AC 2500 (1min.) V N*m Screw torque Mounting *2 3.5 N*m Terminals *2 4.5 N*m Terminals *2 1.7 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6) Terminal 3.5 to 4.5 N*m(M6), 1.3 to 1.7N*m(M4) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Equivalent Circuit Schematic C E de ew n for . n sig G E Electrical characteristics (at Tj=25C unless otherwise specified) Item e m m Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time t No Characteristics Min. Typ. - - 5.5 - - - - - - - - - - - - - o c e r nd - - 7.2 2.3 2.8 48000 10000 8800 0.35 0.25 0.1 0.45 0.08 2.7 2.4 - Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=400mA Tc=25 C VGE=15V, IC=400A Tc=125C VGE=0V V CE=10V f=1MHz V CC=600V mA A V V Max. 4.0 0.8 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.5 - 0.35 pF s IC=400A VGE=15V RG=1.8 ohm Tj=25C Tj=125C IF=400A IF=400A, VGE=0V V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*4 Characteristics Min. Typ. - - - - - 0.0125 Conditions Unit IGBT FWD the base to cooling fin C/W C/W C/W Max. 0.04 0.12 - *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ IGBT Module 1MBI400S-120 Characteristics Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) 1000 1000 VGE= 20V 15V 12V VGE= 20V 15V 12V 800 Collector current : Ic [ A ] Collector current : Ic [ A ] 800 600 10V 400 600 10V 400 200 200 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 3 4 5 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 1000 10 Tj= 25C Tj= 125C 8 Collector - Emitter voltage : VCE [ V ] 800 600 n sig ew n for 400 200 e m m 4 nd 0 0 1 2 o c e r 3 4 t Ic= 400A Ic=200A 0 5 5 10 15 20 Dynamic Gate charge (typ.) Vcc=600V, Ic=400A, Tj= 25C Collector - Emitter voltage : VCE [ V ] Cies 10000 5000 Coes Cres 1000 1000 25 800 20 600 15 400 10 200 5 0 0 5 10 15 20 25 30 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100000 Ic= 800A 2 Collector - Emitter voltage : VCE [ V ] No . de 6 35 0 1000 2000 Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 3000 0 4000 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 2 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Capacitance : Cies, Coes, Cres [ pF ] 1 IGBT Module 1MBI400S-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125C Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 50 500 ton tr tf 100 50 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm 700 100 5000 Eon(125C) ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff tr 1000 500 tf 1 o c e r 10 for 40 20 t 0 Eoff(25C) Err(125C) Err(25C) 200 400 600 800 Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125C 900 Eon 800 700 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] w ne Eoff(125C) Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125C 300 n sig Eon(25C) 0 50 Gate resistance : Rg [ ohm ] No . de 60 nd e mm 100 50 0.5 80 200 100 Eoff 600 500 400 300 200 100 Err 0 0.5 0 1 10 50 Gate resistance : Rg [ ohm ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Module 1MBI400S-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm Forward current vs. Forward on voltage (typ.) 800 1000 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 600 400 200 Irr(125C) trr(125C) Irr(25C) 100 0 trr(25C) 10 0 1 2 3 4 Forward on voltage : VF [ V ] 0 100 200 300 400 500 600 700 Forward current : IF [ A ] Transient thermal resistance Thermal resistanse : Rth(j-c) [ C/W ] 0.5 FWD 0.1 de 0.05 IGBT ew n for 0.01 1E-3 0.001 nd e mm 0.01 0.1 o c e r 1 Pulse width : Pw [ sec ] t No Outline Drawings, mm mass : 380g http://store.iiic.cc/ . n sig