1MBI400S-120 IGBT Module
1200V / 400A 1 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector Continuous Tc=25°C IC
current Tc=80°C
1ms Tc=25°C IC pulse
Tc=80°C -IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage *1Vis
Screw torque Mounting *2
Terminals *2
Terminals *2
Rating
1200
±20
600
400
1200
800
400
800
3100
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
1.7
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
trr
– – 4.0
– – 0.8
5.5 7.2 8.5
– 2.3 2.6
– 2.8 –
– 48000 –
– 10000 –
– 8800 –
– 0.35 1.2
– 0.25 0.6
– 0.1 –
– 0.45 1.0
– 0.08 0.3
– 2.7 3.5
– 2.4 –
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=400mA
Tc=25° C VGE=15V, IC=400A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=400A
VGE=±15V
RG=1.8 ohm
Tj=25°C IF=400A, VGE=0V
Tj=125°C
IF=400A
mA
µA
V
V
pF
µs
V
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance – – 0.04
– – 0.12
– 0.0125 –
IGBT
FWD
the base to cooling fin
°C/W
°C/W
°C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
G E
CE
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
Characteristics
1MBI400S-120 IGBT Module
012345
0
200
400
600
800
1000
8V
10V
12V15VVGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
200
400
600
800
1000
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
200
400
600
800
1000
Tj= 25°C Tj= 125°C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
510152025
0
2
4
6
8
10
Ic=200A
Ic= 400A
Ic= 800A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
1000
5000
10000
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 1000 2000 3000 4000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=400A, Tj= 25°C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
1MBI400S-120 IGBT Module
0 100 200 300 400 500 600 700
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0 100 200 300 400 500 600 700
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125°C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
0.5 1 10 50
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C
Gate resistance : Rg [ ohm ]
Switching time : ton, tr, toff, tf [ nsec ]
0 200 400 600 800
0
20
40
60
80
100
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=+-15V, Rg=1.8ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
0.5 1 10 50
0
100
200
300
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
100
200
300
400
500
600
700
800
900
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module
Outline Drawings, mm
mass : 380g
1MBI400S-120
01234
0
200
400
600
800
Tj=25°C
Tj=125°C
Forward current vs. Forward on voltage (typ.)
Forward current : I F [ A ]
Forward on voltage : VF [ V ]
0 100 200 300 400 500 600 700
10
100
1000
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=+-15V, Rg=1.8ohm
Forward current : IF [ A ]
Reverse rec o very c urrent : I rr [ A ]
Reverse recovery time : trr [ n sec ]
0.001 0.01 0.1 1
1E-3
0.01
0.05
0.1
0.5
Transient thermal resistance
Thermal resist anse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
