1/8
®
T4 Series
SNUBBERLESS™ & LOGIC LEVEL 4A TRIACS
June 2003 - Ed: 5
MAIN FEATU RE S :
DESCRIPTION
Based on ST’s Snubber less / Logic level technolo-
gy providi ng high commut at ion performanc es, the
T4 series is suit able for use on AC induct ive loads.
They are recommended for applications using
universal motors, elect rovalves.... such as kitchen
aid equipm ents , power tools, dishwash ers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
Symbol Value Unit
IT(RMS) 4A
V
DRM/VRRM 600 to 800 V
IGTT (Q1)5 to 35 mA
ABSOLUTE MAXIM UM RATINGS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) DPAK / IPAK
TO-220AB Tc = 110°C 4A
ISOWATT 220AB Tc = 105°C
ITSM Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31
I²tI
²
t Value for fusing tp = 10 ms 5.1 A²s
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg
TjStorage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
G
A2
A1
G
A2
A2
A1
DPAK
(T4-B)
A1
A2 G
ISOWATT 220AB
(T4-W)
A2
A2
A1
G
A2
A2
A1
G
TO-220AB
(T4-T)
IPAK
(T4-H)
T4 Series
2/8
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwis e specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polariti es of A2 referenced to A1
THERMA L RESISTANCES
S = Copper surface under tab
Symbol Test Conditions Quadrant T4 Unit
T405 T410 T435
IGT (1) VD = 12 V RL = 30 ΩI - II - III MAX. 5 10 35 mA
VGT I - II - III MAX. 1.3 V
VGD VD = VDRM RL = 33 kΩ
Tj = 125°C I - II - III MIN. 0.2 V
IH (2) IT = 100 mA MAX. 10 15 35 mA
ILIG = 1.2 IGT I - III MAX. 10 25 50 mA
II 15 30 60
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 V/µs
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 -
Without snubber Tj = 125°C - - 2.5
Symbol Test Conditions Value Unit
VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vto (2) Threshold voltage Tj = 125°C MAX. 0.9 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 120 mΩ
IDRM
IRRM
VDRM = VRRM Tj = 25°C MAX. 5µA
Tj = 125°C 1 mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) DPAK
IPAK
TO-220AB 2.6 °C/W
ISOWATT220AB 4.0
Rth(j-a) Junction to ambient S = 0.5 cm²DPAK 70 °C/W
TO-220AB
ISOWATT220AB 60
IPAK 100
T
T4 Series
3/8
PRODUCT SELECTOR
ORDERING INFO RMATION
OT HER INFORMATION
Note: xx = sensiti vity, yyy = vo ltage
Part Number Voltage (xxx) Sensitivity Type Package
600 V 700 V 800 V
T405-xxxB X X X 5 mA Logic level DPAK
T405-xxxH X X X 5 mA Logic level IPAK
T405-xxxT X X X 5 mA Logic level TO-220AB
T405-xxxW X X X 5 mA Logic level ISOWATT220AB
T410-xxxB X X X 10 mA Logic level DPAK
T410-xxxH X X X 10 mA Logic level IPAK
T410-xxxT X X X 10 mA Logic level TO-220AB
T410-xxxW X X X 10 mA Logic level IS OWAT T220 AB
T435-xxxB X X X 35 mA Snubberle ss DPAK
T435-xxxH X X X 35 mA Snubberle ss IPAK
T435-xxxT X X X 35 mA Snubberle ss TO-220AB
T435-xxxW X X X 35 mA Snubberle ss IS OWAT T220 AB
Part Number Marking Weight Base
quantity Packing
mode
T4xx-yyyB T4xxyyyB 0.3 g 75 Tube
T4xx-yyyB-TR T4xxyyyB 0.3 g 2500 Tape & reel
T4xx-yyyH T4xxyyy 0.4 g 75 Tube
T4xx-yyyT T4xxyyyT 2.3 g 50 Tube
T4xx-yyyW T4xxyyyW 2.1 g 50 Tube
T 4 05 - 600 B (-TR)
TRIAC
SERIES
SENSITIVITY:
05: 05mA
10: 10mA
35: 35mA
VOLTAGE:
600: 600V
700: 700V
800: 800V
CURRENT: 4A
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
W: ISOWATT220AB
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
T4 Series
4/8
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle). Fig. 2-1: RMS on- state current case versus tem-
perature (full cycle).
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-
ness: 35µm),full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6P(W)
IT(RMS)(A)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Tc(°C)
IT(RMS)(A)
TO-220AB/DPAK/IPAK
ISOWATT220AB
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tamb(°C)
IT(RMS)(A)
DPAK
(S=0.5cm²)
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-2
1E-1
1E+0 K=[Zth/Rth]
Rth(j-c)
Rth(j-a)
TO-220AB/DPAK/IPAK
ISOWATT220AB
DPAK/IPAK
TO-220AB/ISOWATT220AB
tp(s)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
1 10 100 1000
0
5
10
15
20
25
30
35 ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=110°C
One cycle
t=20ms
Number of cycles
T4 Series
5/8
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t .
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of mai n c urrent versus (dV /dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: DPAK thermal resistance junction to
ambient v ersus copper surf ace under tab (printed
circuit board FR4, copper thickness: 35µm).
0.01 0.10 1.00 10.00
1
10
100
500
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
50A/µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
30.0 ITM(A)
Tj max.:
Vto= 0.90 V
Rd= 120 mΩ
Tj=Tj max.
VTM(V)
0.1 1.0 10.0 100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T435
T410
T405
(dV/dt)c (V/µs)
0 25 50 75 100 125
0
1
2
3
4
5
6(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj(°C)
0 4 8 1216202428323640
0
10
20
30
40
50
60
70
80
90
100 Rth(j-a) (°C/W)
DPAK
S(cm²)
T4 Series
6/8
PACKAGE MECHANICAL DATA
DPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
R 0.2 typ. 0.007 typ.
V2 0° 8° 0° 8°
R
R
FOOTPRINT DIME NSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.61.6
2.32.3
T4 Series
7/8
PACKAGE MECHANICAL DATA
ISO WATT220AB (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
ec1
T4 Series
8/8
Information furnished is b elieved to be ac curate and reliable. However, STMicr oelect ronics assumes n o responsibility for the consequences
of us e of su ch in fo rm ati on n or f or a ny in fr ing em ent of pa te nt s or o th er r igh ts o f th ir d pa r tie s w hic h may r esul t from i ts us e. No lic ense is granted
by impli cation or othe rwise under any pat ent or patent rights of STM i croele ct ronics. S pecifi cations m entioned in thi s publi cati on are subje ct
to ch ange without not ic e. T hi s publication su persedes and replaces all in formation previ ously sup pl i ed. STMi croele ct ronics products are not
authorized for us e as critic al components in l i fe support devices or systems without express w ri t ten approval of S TMicroelectr o nics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMi croelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - F rance - Germany - Hong Kong - India - It al y - Japan - Ma la ysia
Malta - Morocco - Singapore - Spain - Sweden - S witzerland - Uni ted Kingdom - U.S.A
http://www.st.com
PACKAGE MECHANICAL DATA
IPAK (Plasti c)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.035
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°
HLL1
G
B5
B
V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
