Product Standards
Transistors with Built-in Resistor
DRA3144T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1 47 k
+150 °C
Junction temperature Tj 150 °C
47 +30% k
V
-0.4
Input resistance R1 -30%
V
-0.25 V
Input voltage Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-2.8
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA
-0.01 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 -
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0
-0.1 μA
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 μA
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0
V
Parameter
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50
Symbol Conditions
Storage temperature Tstg -55 to
Total power dissipation PT 100 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Unit: mm
SC-105AA
Collector
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
DRA3144T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3144T
DRA9144T in SSSMini3 type package
Features
Marking Symbol: LP
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
C
B
R1
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11682
Revision.
2
Established
:
Revised
:
Product Standards
Transistors with Built-in Resistor
DRA3144T0L
Technical Data ( reference )
Page 2 of 3
IC - VCE
-100 μA
-200 μA
-300 μA
-400 μA
-500 μA
IB=-600 μA
-0
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0 -2 -4 -6 -8 -10 -12
Collector-emitter voltage VCE (V)
Collector current IC (A)
Ta = 25 ℃
hFE - IC
0
50
100
150
200
250
300
350
400
450
500
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Forward current transfer ratio hFE
Ta = 85 ℃
25 ℃
-40 ℃
VCE = -10 V
VCE(sat) - IC
-0.01
-0.1
-1
-10
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector-emitter saturation voltage
VCE(sat) (V)
IC/IB = 20
Ta = 85 ℃25 ℃
-40 ℃
Io - VIN
-1.0E-06
-1.0E-05
-1.0E-04
-1.0E-03
-1.0E-02
-0 -0.5 -1 -1.5 -2
Input voltage VIN (V)
Output current Io (A)
25 ℃
Vo = -5 V
Ta = 85 ℃
-40 ℃
VIN - Io
-0.1
-1
-10
-100
-0.0001 -0.001 -0.01 -0.1
Output current Io (A)
Input voltage VIN (V)
Vo = -0.2 V
85 ℃
25 ℃
Ta = -40 ℃
PT - Ta
0
25
50
75
100
125
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (℃)
Total power dissipation PT (mW)
Doc No.
TT4-EA-11682
Revision.
2
Established
:
Revised
:
Product Standards
Transistors with Built-in Resistor
DRA3144T0L
Unit: mm
Page
SSSMini3-F2-B
Land Pattern (Reference) (Unit: mm)
3
3of
0.30
+0.05
-0.02
0.13
+0.05
-0.02
0.80
±0.05
1.20
±0.05
(0.4) (0.4)
1.20
±0.05
0.80
±0.05
0 to 0.05 0.20
±0.05
0.52
±0.03
(0.27)
0.20
+0.05
-0.02
12
3
(5°)
(5°)
1.15
0.45
0.35 0.35
0.350.35
0.4 0.4
Doc No.
TT4-EA-11682
Revision.
2
Established
:
Revised
:
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semiconductors described in this book
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