Power Management & Multimarket
MOSFET
Metall Oxide Semiconductor Field Effect Transistor
Data Sheet
Rev. 2.3
,
2018
-
02
-
28
CoolMOS E6
650V CoolMOSTM E6 Power Transistor
IPx65R600E6
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
1 Description
Features
Extremely low losses due to very low F O M R
dson
*Q
g
and E
oss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2)
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use o fferrite beads on the gate or
separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @Tj max
700
V
RDS(on), max
0.6
Ω
QG, typ
23
nC
ID, pulse
18
A
Eoss @ 400V
2
µJ
Body diode di/dt
500
A/µs
Type / Ordering Code
Package
Marking
Related links
IPD65R600E6
PG-TO252
65E6600
IFX CoolMOS Webpage
IFX Design tools
IPP65R600E6
PG-TO220
IPA65R600E6
PG-TO220 FullPAK
1) J-STD20 and JESD22
2) For PG-TO252: non-Halogen free (OPN: IPD65R600E6BT); Halogen free (OPN: IPD65R600E6AT)
Rev. 2.3
Page 2
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table of Contents
1 Description .......................................................................................................................................... 2
2 Maximum ratings ................................................................................................................................ 4
3 Thermal characteristics ..................................................................................................................... 5
4 Electrical characteristics ................................................................................................................... 5
5 Electrical characteristics diagrams .................................................................................................. 8
6 Test circuits ...................................................................................................................................... 13
7 Package outlines .............................................................................................................................. 14
8 Revision History ............................................................................................................................... 17
Rev. 2.3
Page 3
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
2 Maximum ratings
At Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Continuous drain current 1)
ID
–
–
7.3
A
TC = 25°C
–
–
4.6
TC = 100°C
Pulsed drain current 2)
ID, pulse
–
–
18
TC = 25°C
Averlanche energy, single pulse
EAS
–
–
142
mJ
ID = 1.3A; VDD = 50V;
TC = 25°C (see
Table 11)
Averlanche energy, repetitive
EAR
–
–
0.21
ID=1.3 A, VDD=50V
Avalanche current, repetitive
IAR
–
–
1.3
A
MOSFET dv/dt ruggedness
dv/dt
–
–
50
V/ns
VDS=0…480 V
Gate source voltage
VGS
-20
–
20
V
static
-30
30
AC (f >1 Hz)
Power dissipation for
Non FullPAK
Ptot
–
–
63
W
TC = 25°C
Power dissipation for
FullPAK
Ptot
–
–
28
W
TC = 25°C
Operating and storage temperature
Tj, Tstg
-55
–
150
°C
Mounting torque
TO-220
–
–
60
Ncm
M3 and M3.5 screws
Mounting torque
TO-220 FullPAK
–
–
50
M2.5 Screws
Continous diode forward current
IS
–
–
6.3
A
TC = 25°C
Diode pulse current2)
IS, pulsed
–
–
18
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
–
–
15
V/ns
VDS=0…480 V, ISD ≤ ID,
TC = 125°C
(see table 22)
Maxumum diode commutation
speed3)
dif/dt
500
A/µs
1) Limited by Tj, max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj, max
3) Identical low side and high side switch with identical RG
Rev. 2.3
Page 4
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP65R600E6)
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Thermal resistance, junction-case
RthJC
–
–
2.0
°C/W
Thermal resistance, junction-
ambient
RthJA
–
–
62
leaded
Soldering temperature,
wavesoldering only allowed at leads
Tsold
–
–
260
°C
1.6mm (0.063 in.) from
case for 10 s
Table 4 Thermal characteristics TO-220 FullPAK (IPA65R600E6)
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Thermal resistance, junction-case
RthJC
–
–
4.5
°C/W
Thermal resistance, junction-
ambient
RthJA
–
–
80
leaded
Soldering temperature,
wavesoldering only allowed at leads
Tsold
–
–
260
°C
1.6mm (0.063 in.) from
case for 10 s
Table 5 Thermal characteristics TO-252 (IPD65R600E6)
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Thermal resistance, junction-case
RthJC
–
–
2.0
°C/W
Thermal resistance, junction-ambient
RthJA
–
–
62
SMD version, device on
PCB, minimal footprint
35
SMD version, device on
PCB, 6cm2 cooling area1)
Soldering temperature,
wave- &reflowsoldering only allowed
Tsold
–
–
260
°C
Reflow MSL1
1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical
without air stream cooling.
Rev. 2.3
Page 5
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
4 Electrical characteristics
Electrical characteristics, at Tj=25°C, unless otherwise specified
Table 6 Static characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Drain-source Breakdown voltage
V(BR)DSS
650
–
–
V
VGS= 0V, ID= 1.0mA
Gate threshold voltage
VGS(th)
2.5
3
3.5
VDS= VGS, ID= 0.21mA
Zero gate Voltage drain current
IDSS
–
–
1
µA
VDS=600 V, VGS=0V,
Tj=25°C
–
10
–
VDS=600 V, VGS=0V,
Tj=150°C
Gate- source leakage current
IGSS
–
–
100
nA
VGS= 20V, VDS= 0V
Drain- source on- state resistance
RDS(on)
–
0.54
0.6
Ω
VGS= 10V, ID=2.1A,
Tj= 25°C
–
1.40
–
VGS= 10V, ID=2.1A,
Tj= 150°C
Gate resistance
RG
–
10.5
–
Ω
f= 1MHz, open drain
Table7 Dynamic characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Input capacitance
Ciss
–
440
–
pF
VGS= 0V, VDS= 100V,
f= 1MHz
Output capacitance
Coss
–
30
–
Effective output capacitance,
energy related1)
Co(er)
–
21
–
VGS= 0V,
VDS=0…480V
Effective output capacitance,
time related2)
Co(tr)
–
88
–
ID= const
VGS= 0V, VDS=0…480 V
Turn- on delay time
td(on)
–
10
–
ns
VDD=400 V
VGS=13 V, ID=3.2A,
RG= 6.8 Ω
(see table 20)
Rise time
tr
–
8
–
Turn- off delay time
td(off)
–
64
–
Fall time
tf
–
11
–
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Rev. 2.3
Page 6
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 8 Gate charge characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Gate to source charge
QGS
–
2.75
–
nC
VDD= 480V, ID= 3.2A,
VGS=0 to 10 V
Gate to drain charge
QGD
–
12
–
Gate charge, total
QG
–
23
Gate plateau voltage
Vplateau
–
5.5
–
V
Table 8 Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Diode forward voltage
VSD
–
0.9
–
V
VGS=0V, IF=3.2A,
Tj=25°C
Reverse recovery time
trr
–
270
–
ns
VR=400 V, IF=3.2A,
diF/dt=100 A/µs
(see table 22)
Reverse recovery charge
Qrr
–
2.0
–
nC
Peak reverse recovery current
Irrm
–
13
–
A
Rev. 2.3
Page 7
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
5 Electrical characteristics diagrams
Table 10
Power dissipation
Non FullPAK
Power dissipation
FULLPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
Non FullPAK
Max. transient thermal impedance
Non FullPAK
Z(thJC)=f(tp); parameter: D=tp/T
Z(thJC)=f(tp); parameter: D=tp/T
Rev. 2.3
Page 8
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 12
Safe operating area TC=25°C
Non FullPAK
Safe operating area TC=25°C
FullPAK
ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp
Table 13
Safe operating area TC=80°C
Non FullPAK
Safe operating area TC=80°C
FullPAK
ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp
Rev. 2.3
Page 9
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 14
Typ. output characteristics TC=25°C
Typ. output characteristics TC=125°C
ID=f(VDS); Tj=25°C; parameter: VGS
ID=f(VDS); Tj=125°C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)= f(Tj); ID=4.9A; VGS=10V
Rev. 2.3
Page 10
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=4.9 A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=1.8 A; VDD=50 V
VBR(DSS)=f(Tj); ID=1.0 mA
Rev. 2.3
Page 11
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 18
Typ. capacitances
Typ. COSS stored energy
C=f(VDS); VGS= 0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF= ƒ(VSD); parameter: Tj
Rev. 2.3
Page 12
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
6 Test circuits
Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Table 11
Unclamped inductive load test circuit
Unclamped inductive waveform
Table 22
Test circuit for diode characteristics
Diode recovery waveform
VDS
VGS
VDS
VGS
td(on) td(off)
tf
ton
tr
toff
10%
90%
VDS
ID
VDS
VD
V(BR)DS
ID
VDS
Rev. 2.3
Page 13
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
7 Package outlines
Figure 1 Outlines TO-252,, dimensions in mm/inches
Rev. 2.3
Page 14
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Figure 2 Outlines TO220, dimensions in mm/inches
Rev. 2.3
Page 15
2018-02-28
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Figure 3 Outlines TO220 FullPAK, dimensions in mm
Rev. 2.3
Page 16
2018-02-28
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.86
2.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38 1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
07
27.01.2017
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3
17
650VCoolMOSªE6PowerTransistor
IPx65R600E6
Rev.2.3,2018-03-04
RevisionHistory
IPx65R600E6
Revision:2018-03-04,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.2 2016-08-04 Revised TO220 Full PAK package drawing on page 16
2.3 2018-03-04 Outline PG-TO-220 FullPAK update
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