SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL extremely high gain. SOT-23 CASE Marking Code is FG. MAXIMUM RATINGS (Ta=25C) SYMBOL Collector-Base Voltage VcBO 60 Collector-Emitter Voltage VCES 60 Emitter-Base Voltage VEBO 10 Collector Current Ic 500 Power Dissipation Pp 350 Operating and Storage Junction Temperature Ty: Tstg -65 to +150 Thermal Resistance OJA 357 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IcES Vce=50V ICBO VcB=s0V lEBO VBE=10V BVcES Ic=100uA 60 BVcBO Ic=100nA 60 VCE(SAT) !c=100mA, Ip=0.1mA VBE(ON) VoE=5.0V, Ic=100mA hrE VCE=5.0V, Ic=10mA 10,000 hee VGE=5.OV, IG=100mA 10,000 fr VoE=5.0V, Ic=10mA, f=100MHz 125 240 Central . CMPTA27 Semiconductor Corp. MAX 500 100 100 1.5 2.0 SEMICONDUCTOR CMPTA27 type is a Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring UNITS mA mw C OCW UNITS nA <<<< 3 MHzAll dimensions in inches (mm). .110(2.80) -118(3.00) .003(0.08) .083(2.10) 7006(0.15) -041(1.05) NOMINAL |_ ; NOMINAL \ r ' T .106(2.70) } .047(1.19) MAX IMUM | -063(1.60) 5 i .005(0. J _ +. 3 MAXIMUM , ,oraco. 3s) .037(0.94) 020(0.50} -050(1.28) LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR OrN Te) SHEET R2 241