MW6S004NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
•Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — - 34 dBc
•Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•On- Chip RF Feedback for Broadband Stability
•Integrated ESD Protection
•RoHS Compliant
•In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two- Tone
Case Temperature 79°C, 4 W CW
RθJC
8.8
8.5
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S004N
Rev. 4, 6/2009
Freescale Semiconductor
Technical Data
MW6S004NT1
1- 2000 MHz, 4 W, 28 V
LATERAL N -CHANNEL
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD 1.5
PLASTIC
Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J- STD -020 3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 mAdc)
VGS(th) 1.2 2 2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mAdc)
VGS(Q) — 2.7 — Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test)
VGG(Q) 2.2 3 4.2 Vdc
Drain-Source On- Voltage
(VGS = 10 Vdc, ID = 50 mAdc)
VDS(on) — 0.27 0.37 Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 21 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 25 — pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 30 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two -Tone Test
Power Gain Gps 16.5 18 20 dB
Drain Efficiency ηD28 33 — %
Intermodulation Distortion IMD — -34 -28 dBc
Input Return Loss IRL — -12 -10 dB
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP,
f = 900 MHz, Two -Tone Test, 100 kHz Tone Spacing
Power Gain Gps — 19 — dB
Drain Efficiency ηD— 33 — %
Intermodulation Distortion IMD — -39 — dBc
Input Return Loss IRL — -12 — dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
MW6S004NT1
3
RF Device Data
Freescale Semiconductor
Figure 1. MW6S004NT1 Test Circuit Schematic
Z7 0.210″ x 1.220″ Microstrip
Z8 0.054″ x 0.680″ Microstrip
Z9 0.054″ x 0.260″ Microstrip
Z10 0.025″ x 0.930″ Microstrip
PCB Arlon CuClad 250GX -0300-55 - 22, 0.020″, εr = 2.5
Z1 0.054″ x 0.430″ Microstrip
Z2 0.054″ x 0.137″ Microstrip
Z3 0.580″ x 0.420″ Microstrip
Z4 0.580″ x 0.100″ Microstrip
Z5 0.025″ x 0.680″ Microstrip
Z6 0.210″ x 0.100″ Microstrip
RF
OUTPUT
VBIAS VSUPPLY
RF
INPUT
DUT
Z1
C2
R1
C8
+
C1 C7
R2 Z5
R3
Z2 Z3 Z4
Z6
Z10
C3 C4 C5
Z7 Z8
C6
Z9
Table 6. MW6S004NT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet
C2, C3, C6, C7 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C4, C5 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C8 10 µF, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet
R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay
R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
4
RF Device Data
Freescale Semiconductor
MW6S004NT1
Figure 2. MW6S004NT1 Test Circuit Component Layout
25
C8
MW6S004N
Rev 3
R1 C1
R2 C7
C2 R3
C3 C4 C5
C6
MW6S004NT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc)
−28
−16
−20
−24
19901930
IRL
Gps
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout = 2 Watts Avg.
19801970196019501940
18.4
18.2
−35
34
33
32
−31
−33
ηD, DRAIN
EFFICIENCY (%)
ηD
18
17.8
17.6
17.2
16.4
16.8
17.4
−32
−30
31
−12
IM3
Pout, OUTPUT POWER (WATTS) PEP
14
20
1
IDQ = 75 mA
19
17
16
10 20
Figure 4. Two-Tone Power Gain versus
Output Power
10
−80
−10
0.01
7th Order
VDD = 28 Vdc, IDQ = 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
5th Order
3rd Order
1
−20
−30
−40
−50
−60
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
10
−60
−25
0.1
7th Order
TWO−TONE SPACING (MHz)
5th Order
3rd Order
−30
−35
−40
−45
−50
1 100
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
26
47
P3dB = 38.22 dBm (6.637 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 50 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 1960 MHz
43
41
37
35
33
16 18 22
Actual
Ideal
2414
Figure 7. Pulsed CW Output Power versus
Input Power
IMD, INTERMODULATION DISTORTION (dBc)
Pout, OUTPUT POWER (dBm)
18 50 mA
62.5 mA
P1dB = 37.61 dBm (5.768 W)
−55
0.01
VDD = 28 Vdc, Pout = 2 W (Avg.)
IDQ = 50 mA, 100 kHz Tone Spacing
17
16.6
30
−34
−8
15
0.1
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
37.5 mA
25 mA
−70
0.1
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz 45
39
20
P6dB = 38.73 dBm (7.465 W)
6
RF Device Data
Freescale Semiconductor
MW6S004NT1
TYPICAL CHARACTERISTICS
ACPR (dB)
0 −70
Pout, OUTPUT POWER (WATTS) AVG.
50 −20
40 −30
30 −40
20 −50
10 −60
0.01 1 10
Gps
ACPR
Figure 8. Single- Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
10
14
20
0.01
0
60
TC = −30_C
25_C
−30_C
1
19
18
17
16
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
IDQ = 50 mA
f = 1960 MHz
VDD = 24 V
7
15
19
06
17
16
18
234
Gps, POWER GAIN (dB)
12
22
1800
−25
0
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
20 −5
18
16
−10
−15
14 −20
210020502000195019001850
VDD = 28 Vdc
Pout = 2 W CW
IDQ = 50 mA
S11
(
dB
)
S21 (dB)
85_C
85_C
851
VDD = 28 Vdc
IDQ = 50 mA
f = 1960 MHz
28 V 32 V
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%)
0.1
VDD = 28 Vdc, IDQ = 50 mA
f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
15
0.1
50
ηD
18.5
17.5
16.5
15.5
MW6S004NT1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 4 W PEP, and ηD = 33%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
104
110 130 150 170 190
MTTF (HOURS)
210 230
8
RF Device Data
Freescale Semiconductor
MW6S004NT1
f = 1930 MHz
Zo = 10 Ω
Zload
Zsource
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
f
MHz
Zsource
W
Zload
W
1930 1.96 - j5.34 8.78 + j6.96
1960 1.89 - j5.10 8.93 + j7.46
1990 1.82 - j4.85 9.11 + j7.97
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 13. Series Equivalent Source and Load Impedance
MW6S004NT1
9
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system)
IDQ = 50 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
500 0.649 - 116.340 7.902 105.420 0.056 -73.750 0.548 -33.570
550 0.695 - 121.680 7.502 98.790 0.053 -80.570 0.593 -41.480
600 0.733 -126.560 7.111 92.380 0.049 - 87.010 0.632 -48.890
650 0.770 - 131.340 6.699 86.290 0.045 -93.280 0.669 -56.000
700 0.800 - 135.740 6.302 80.450 0.041 -99.120 0.701 -62.810
750 0.827 - 140.030 5.922 74.850 0.038 -104.850 0.727 -69.290
800 0.848 - 143.950 5.552 69.630 0.035 -110.110 0.750 -75.350
850 0.866 - 147.690 5.220 64.580 0.032 -115.220 0.770 -81.130
900 0.882 - 151.140 4.891 59.970 0.029 -119.960 0.786 -86.570
950 0.895 - 154.560 4.597 55.490 0.026 -124.790 0.800 -91.730
1000 0.907 -157.590 4.315 51.240 0.024 -129.090 0.813 - 96.660
1050 0.916 -160.540 4.060 47.170 0.022 -133.370 0.824 -101.340
1100 0.923 -163.310 3.819 43.340 0.020 -137.460 0.833 - 105.790
1150 0.929 -165.930 3.601 39.650 0.018 -141.440 0.840 - 110.050
1200 0.935 -168.430 3.398 36.110 0.017 -145.330 0.847 - 114.170
1250 0.938 -170.770 3.210 32.740 0.015 -149.540 0.851 -118.060
1300 0.942 -173.030 3.036 29.490 0.014 -153.430 0.856 -121.880
1350 0.945 -175.140 2.875 26.360 0.013 -157.460 0.859 -125.520
1400 0.948 -177.170 2.728 23.330 0.012 -161.910 0.863 -129.020
1450 0.951 -179.090 2.590 20.440 0.011 - 166.180 0.866 -132.390
1500 0.953 179.030 2.464 17.640 0.010 -170.630 0.869 -135.650
1550 0.954 177.270 2.347 14.920 0.009 -174.890 0.872 -138.760
1600 0.955 175.570 2.240 12.320 0.008 179.950 0.875 -141.750
1650 0.956 173.980 2.139 9.740 0.008 173.920 0.877 -144.650
1700 0.957 172.350 2.047 7.250 0.007 167.710 0.880 -147.480
1750 0.957 170.800 1.958 4.810 0.007 161.810 0.882 -150.180
1800 0.958 169.340 1.879 2.440 0.006 155.370 0.884 -152.760
1850 0.959 167.920 1.806 0.260 0.006 148.940 0.886 -155.230
1900 0.959 166.510 1.736 -1.980 0.005 142.630 0.887 - 157.580
1950 0.960 165.200 1.668 -4.310 0.005 136.740 0.888 - 160.050
2000 0.959 163.800 1.611 -6.240 0.005 129.910 0.890 -162.070
2050 0.959 162.420 1.555 -8.290 0.005 123.810 0.891 - 164.190
2100 0.958 161.170 1.504 -10.270 0.005 118.200 0.892 -166.140
2150 0.958 159.840 1.456 -12.210 0.005 112.740 0.893 -168.060
2200 0.957 158.560 1.412 -14.130 0.005 108.460 0.894 - 169.840
2250 0.957 157.160 1.372 -16.010 0.005 103.840 0.896 - 171.610
2300 0.955 155.870 1.334 -17.870 0.005 99.310 0.896 -173.260
2350 0.954 154.510 1.300 -19.700 0.005 95.360 0.897 -174.830
2400 0.953 153.120 1.268 -21.510 0.005 91.030 0.898 -176.390
2450 0.953 151.730 1.238 -23.250 0.005 87.460 0.899 -177.840
10
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued)
IDQ = 50 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
2500 0.952 150.340 1.211 -25.120 0.006 84.160 0.899 -179.270
2550 0.950 149.010 1.187 -26.920 0.006 80.780 0.897 179.420
2600 0.949 147.380 1.166 -28.650 0.006 77.880 0.897 178.120
2650 0.948 145.920 1.144 -30.420 0.007 74.670 0.898 176.840
2700 0.944 144.200 1.121 -32.310 0.007 71.360 0.896 175.480
2750 0.944 142.790 1.105 -34.230 0.007 67.980 0.897 174.060
2800 0.943 141.020 1.088 -36.000 0.007 63.950 0.897 172.930
2850 0.941 139.410 1.073 -37.870 0.007 61.230 0.896 171.630
2900 0.940 137.640 1.058 -39.760 0.008 59.810 0.896 170.330
2950 0.938 135.900 1.045 -41.680 0.008 58.280 0.896 169.040
3000 0.937 133.860 1.032 -43.610 0.008 56.740 0.895 167.510
MW6S004NT1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 466-03
ISSUE D
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.255 0.265 6.48 6.73
B0.225 0.235 5.72 5.97
C0.065 0.072 1.65 1.83
D0.130 0.150 3.30 3.81
E0.021 0.026 0.53 0.66
F0.026 0.044 0.66 1.12
G0.050 0.070 1.27 1.78
H0.045 0.063 1.14 1.60
K0.273 0.285 6.93 7.24
L0.245 0.255 6.22 6.48
N0.230 0.240 5.84 6.10
P0.000 0.008 0.00 0.20
Q0.055 0.063 1.40 1.60
R0.200 0.210 5.08 5.33
S0.006 0.012 0.15 0.31
U0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J0.160 0.180 4.06 4.57
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
A
BD
F
L
R
3
4
21
K
N
ZONE V
ZONE W
ZONE X
GS
H
U
_
10 DRAFT
P
CE
0.35 (0.89) X 45 5
"
YY
Q
VIEW Y-Y
__
4
2
1
3
PLASTIC
PLD 1.5
12
RF Device Data
Freescale Semiconductor
MW6S004NT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
2Feb. 2007 •Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2
•Updated VGS(th) and VGS(Q) to reflect tighter HV6 windows and added Fixture Gate Quiescent VGG(Q) to On
Characteristics table to account for test fixture resistor divider network, p. 2
•Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
•Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
•Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
•Added Product Documentation and Revision History section, p. 12
3Apr. 2009 •Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III
to IV, p. 1
•Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
•Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
•Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
4June 2009 •Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
•Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
MW6S004NT1
13
RF Device Data
Freescale Semiconductor
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Document Number: MW6S004N
Rev. 4, 6/2009
