TLP2631
2007-10-01
1
TOSHIBA photocoupler GaAℓAs IRed & Photo IC
TLP2631
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Interface
Microprocessor System Iinterface
Digital Isolation for A / D, D / A Conversion
The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000 V/μs.
• Input current threshold: IF = 5 mA (max)
• Switching speed: 10MBd (typ.)
• Common mode transient immunity: ±1000 V/μs (min)
• Guaranteed performance over temperature: 0 to 70°C
• Isolation voltage: 2500 Vrms (min)
• UL recognized: UL1577, file no. E67349
Truth Table (positive logic)
Input Output
H L
L H
A 0.01 to 0.1μF bypass capacitor must
connected between pins 8 and 5(see Note 1).
Pin Configuration (top view)
VCC
1
2
3
4GND
8
7
6
5
1 : Anode 1
2 : Cathode 1
3 : Cathode 2
4 : Anode 2
5 : GND
6 : VO2 (Output 2)
7 : VO1 (Output 1)
8 : VCC
Shield
Schematic
VF1
VF2
IF1
IF2
ICC
VCC
VO1
VO2
GND
+
−
−
+
1
2
3
4
8
7
6
5
IO1
IO2
Shield
Unit: mm
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TLP2631
2007-10-01
2
Absolute Maximum Ratings (no derating required up to 70°C)
Characteristic Symbol Rating Unit
Forward current (each channel) IF 20 mA
Pulse forward current
(each channel)* IFP 30 mA
LED
Reverse voltage (each channel) VR 5 V
Output current (each channel) IO 16 mA
Output voltage (each channel) VO −0.5~7 V
Supply voltage
(1 minute maximum) VCC 7 V
Detector
Output collector power
dissipation (each channel) PO 40 mW
Operating temperature range Tstg −55~125 °C
Storage temperature range Topr −40~85 °C
Lead soldering temperature
(10s)** Tsol 260 °C
Isolation voltage
(AC, 1 min., R.H.≤ 60%, Note 3) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* t ≤ 1 msec duration.
** 2mm below seating plane.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Input current, low level, each channel IFL 0 ― 250 μA
Input current, high level, each channel IFH 6.3* ― 20 mA
Supply voltage**, output VCC 4.5 5 5.5 V
Fan out (TTL load, each channel) N ― ― 8
Operating temperature Topr 0 ― 70 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
TLP2631
2007-10-01
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Electrical Characteristics (Ta = 0~70°C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. * Max. Unit
Input forward voltage
(each channel) VF I
F = 10mA, Ta = 25°C ― 1.65 1.75 V
Input diode temperature
coefficient (each channel) ΔVF / ΔTa IF = 10mA ― −2.0 ― mV / °C
Input reverse breakdown
voltage (each channel) BVR I
R = 10μA, Ta = 25°C 5 ― ― V
Input capacitance
(each channel) CT V
F = 0, f = 1MHz ― 45 ― pF
High level output current
(each channel) IOH VCC = 5.5V, VO = 5.5V
IF = 250μA ― 1 250 μA
Low level output voltage
(each channel) VOL VCC = 5.5V, IF = 5mA
IOL(sinking) = 13mA ― 0.4 0.6 V
High level supply current
(both channels) ICCH V
CC = 5.5V, IF = 0 ― 14 30 mA
Low level supply current
(both channels) ICCL V
CC = 5.5V, IF = 10mA ― 24 38 mA
Isolation voltage RS V
S = 500V, R.H. ≤ 60% (Note 3) 5×1010 1014 ― Ω
Capacitance (input−output) CS f = 1MHz (Note 3) ― 0.6 ― pF
Input−input leakage
current II−I R.H. ≤ 60%, t = 5s
VI−I = 500V (Note 6) ― 0.005 ― μA
Resistance (input−input) RI−I V
I−I = 500V (Note 6) ― 1011 ― Ω
Capacitance (input−input) CI−I f = 1MHZ (Note 6) ― 0.25 ― pF
* All typical values are at VCC = 5V, Ta = 25°C.
TLP2631
2007-10-01
4
Switching Characteristics (Ta = 25°C, VCC = 5V)
Characteristic Symbol
Test
Circuit Test Condition Min. Typ. Max. Unit
Propagation delay time to
low output level tpHL 1
IF = 0→7.5mA, RL = 350Ω
CL = 15pF (each channel) ― 60 75 ns
Propagation delay time to
high output level tpLH 1
IF = 7.5mA→0, RL = 350Ω
CL = 15pF (each channel) ― 60 75 ns
Output rise time, output
fall time (10~90%) tr, tf 1
IF = 0 7.5mA, RL = 350Ω
CL = 15pF (each channel) ― 30 ― ns
Common mode transient
immunity at high output
level
CMH 2
IF = 0, RL = 350Ω
VCM = 400V,
VO(min.) = 2V
(each channel, Note 4)
1000 10000 ― V / μs
Common mode transient
immunity at low output
level
CML 2
IF = 7.5mA, RL = 350Ω
VCM = 400V
VO(max.) = 0.8V
(each channel, Note 5)
−1000 −10000 ― V / μs
(Note 1) 2mm below seating plane
(Note 2) The VCC supply voltage to each TLP2631 isolator must be bypassed by a 0.01μF capacitor or larger. This
can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should
be connected as close as possible to the package VCC and GND pins each device.
(Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8
shorted together.
(Note 4) CMH･the maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in
the high state (i.e., VOUT > 2.0V).
Measured in volts per microsecond (V / μs).
Volts/ microsecond can be translated to sinusoidial voltages:
(p.p.)
CM
V
CM
fMax.
dt
(dVCM)
μsV / ==
Example:
VCM = 319Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified minimum.
(Note 5) CML･the maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in
the low output state (i.e., VOUT > 0.8V).
Measured in volts per microsecond (V / μs).
(Note 6) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
TLP2631
2007-10-01
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Test Circuit 1. tpHL and tpLH
Test Circuit 2. Transient Immunity And Typical Waveforms.
)(
=,
)(
=μs
r
t
320(V)
L
CM
μs
r
t
320(V)
H
CM
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
VCC
1
2
3
4GND
8
7
6
5
5V
RL
CL
350Ω
100Ω
0.1μF
PW = 10μs
Pulse input
Duty cycle = 1/10
IF Monitor
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
VO Monitor
IF
VO
VOL
1.5V
0.5V
4.5V
5V
trtf
tpHL tpLH
7.5mA
3.75mA
0mA
VCC
1
2
3
4 GND
8
7
6
5
5V
RL
CL
350Ω
0.1μF
ZO = 50Ω
Pulse generator
VO Monitor
IF
VFF
VCM
A B
+−
VCM
VO
VOL
5V
0.8V
0V
trtf
2V
400V
VO
(IF = 0mA)
(IF = 7.5mA)
90%
10%
TLP2631
2007-10-01
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I
F – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.01
1.0 2.0
0.1
1
10
1.2 1.4 1.6 1.8
Ta = 25 °C
ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
−1.4
0.1 0.3 1 3 10 30
−1.6
−1.8
−2.0
−2.2
−2.4
−2.6
50
V
O – IF
Forward current IF (mA)
Output voltage VO (V)
8
6
4
2
0
0 1 2 34 5 6
VCC = 5 V
Ta = 25 °C
RL = 350Ω
1kΩ
4kΩ
I
OH – Ta
Ambient temperature Ta (°C)
High level output current IOH (μA)
1
0
3
5
10
30
50
100
10 20 30 40 50 60 70
IF = 250 μA
VCC = 5.5 V
VO = 5.5 V
V
O – IF
Forward current IF (mA)
Output voltage VO (V)
8
6
4
2
0
0 1 2 34 5 6
10
Ta = 70°C
0°C
VCC = 5 V
RL = 350Ω
RL = 4kΩ
V
OL – Ta
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
0.2
0 80
20 40 60
0.3
0.4
0.5
IF = 5 mA
VCC = 5.5 V
VE = 2 V
IOL=16mA
12.8mA
6.4mA
9.6mA
TLP2631
2007-10-01
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tpHL, tpLH – IF
Forward current IF (mA)
Propagation delay time
tpHL, tpLH (ns)
120
0
5 19
7 9 11 13 15 17
20
40
60
80
100
RL = 4kΩ
1kΩ
350Ω
350Ω
1kΩ
4kΩ
tpLH
tpLH
tpHL
Ta = 25 °C
VCC = 5 V
tr, tf – Ta
Rise, fall time tr, tf (ns)
Ambient temperature Ta (°C)
0 70
20
40
60
80
10 20 30 40 50 60
280
300
320
0
VCC = 5 V
IF = 7.5 mA
RL = 4kΩ
1kΩ
350Ω
350Ω
1kΩ
4kΩ
tf
tf
tf
tr
tpHL, tpLH – Ta
Ambient temperature Ta (°C)
Propagation delay time
tpHL, tpLH (ns)
0 70
120
0
20
40
60
80
100
10 20 30 40 50 60
RL = 4kΩ
1kΩ
350kΩ
1kΩ
4kΩ
tpLH
tpLH
tpHL
350Ω
VCC = 5 V
IF = 7.5 mA
TLP2631
2007-10-01
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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