BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique * 1 BASE Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 MAXIMUM RATINGS Rating 1 Symbol Value 2 Unit SOT-23 CASE 318 STYLE 6 Collector - Emitter Voltage VCEO -25 V Collector - Base Voltage VCBO -30 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc MARKING DIAGRAM Symbol Max Unit 5x M G G 225 1.8 mW mW/C 556 C/W Collector Current - Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA November, 2011 - Rev. 3 5x M G PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2011 1 1 = Device Code x = F or G = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC808-25LT1/D BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -25 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -30 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 160 250 40 - - - 400 600 - Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC808-25, SBC808-25 BC808-40 (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 V Base -Emitter On Voltage (IC = -500 mA, IB = -1.0 V) VBE(on) - - -1.2 V fT 100 - - MHz Cobo - 10 -0.7 pF SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) ORDERING INFORMATION Device BC808-25LT1G SBC808-25LT1G BC808-40LT1G Specific Marking Package Shipping 5F SOT-23 (Pb-Free) 3000 / Tape & Reel 5G SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25C 100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25C TJ = 25C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 -1000 100 +1.0 qVC for VCE(sat) 0 -1.0 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 2. Saturation Region -2.0 VBE(sat) @ IC/IB = 10 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 4. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 3 -100 BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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