BC808-40LT1 - ON Semiconductor - Datasheet.Directory

November, 2011 − Rev. 3

Publication Order Number:

BC808−25LT1/D

BC808-25LT1G,

SBC808-25LT1G,

BC808-40LT1G

General Purpose

Transistors

PNP Silicon

Features

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO −25 V

Collector − Base Voltage VCBO −30 V

Emitter − Base Voltage VEBO −5.0 V

Collector Current − Continuous IC−500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2)

TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

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COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 6

5x M G

5x = Device Code

x = F or G

M = Date Code*

G=Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

BC808−25LT1G, SBC808−25LT1G, BC808−40LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mA)

V(BR)CEO −25 − − V

Collector−Emitter Breakdown Voltage

(VEB = 0, IC = −10 mA)

V(BR)CES −30 − − V

Emitter−Base Breakdown Voltage

(IE = −1.0 mA)

V(BR)EBO −5.0 − − V

Collector Cutoff Current

(VCB = −20 V)

(VCB = −20 V, TJ = 150°C)

ICBO

−

−100

−5.0

ON CHARACTERISTICS

DC Current Gain

(IC = −100 mA, VCE = −1.0 V) BC808−25, SBC808−25

BC808−40

(IC = −500 mA, VCE = −1.0 V)

hFE

160

250

−

400

600

−

Collector−Emitter Saturation Voltage

(IC = −500 mA, IB = −50 mA)

VCE(sat) − − −0.7 V

Base −Emitter On Voltage

(IC = −500 mA, IB = −1.0 V)

VBE(on) − − −1.2 V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

fT100 − − MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz)

Cobo −10 −0.7 pF

ORDERING INFORMATION

Device Specific Marking Package Shipping†

BC808−25LT1G

5F SOT−23

(Pb−Free) 3000 / Tape & Reel

SBC808−25LT1G

BC808−40LT1G 5G SOT−23

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC808−25LT1G, SBC808−25LT1G, BC808−40LT1G

http://onsemi.com

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

hFE, DC CURRENT GAIN

1000

-1000-0.1 -10 -100

100

-1.0

VCE = -1.0 V

TA = 25°C

IB, BASE CURRENT (mA)

Figure 2. Saturation Region

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

100

1.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficients

+1.0

IC, COLLECTOR CURRENT

Figure 5. Capacitances

-0.1 -1.0-1.0 -10 -100 -1000

-2.0

-1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS

)

V, VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

C, CAPACITANCE (pF)

-1.0

-0.8

-0.6

-0.4

-0.2

-0.01 -0.1 -10 -100-1.0

-1.0

-0.8

-0.6

-0.4

-0.2

-1.0 -10 -1000-100

-10 -100

TJ = 25°C

IC = -10 mA

IC = -100 mA

IC = -300 mA

IC =

-500 mA

TA = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -1.0 V

VCE(sat) @ IC/IB = 10

qVC for VCE(sat)

qVB for VBE

Cob

Cib

BC808−25LT1G, SBC808−25LT1G, BC808−40LT1G

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BC808−25LT1/D

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